METHODS AND SYSTEMS FOR GENERATING AN INSPECTION PROCESS FOR A WAFER
Granted: September 16, 2010
Application Number:
20100235134
Methods and systems for generating an inspection process for a wafer are provided. One computer-implemented method includes separately determining a value of a local attribute for different locations within a design for a wafer based on a defect that can cause at least one type of fault mechanism at the different locations. The method also includes determining a sensitivity with which defects will be reported for different locations on the wafer corresponding to the different locations…
SYSTEMS AND METHODS FOR DETERMINING ONE OR MORE CHARACTERISTICS OF A SPECIMEN USING RADIATION IN THE TERAHERTZ RANGE
Granted: September 16, 2010
Application Number:
20100235114
Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the…
COMPUTER-IMPLEMENTED METHODS FOR DETECTING AND/OR SORTING DEFECTS IN A DESIGN PATTERN OF A RETICLE
Granted: September 9, 2010
Application Number:
20100226562
Various computer-implemented methods are provided. One method for sorting defects in a design pattern of a reticle includes searching for defects of interest in inspection data using priority information associated with individual defects in combination with one or more characteristics of a region proximate the individual defects. The priority information corresponds to modulation levels associated with the individual defects. The inspection data is generated by comparing images of the…
METHOD AND APPARATUS FOR MEASURING SHAPE OR THICKNESS INFORMATION OF A SUBSTRATE
Granted: August 19, 2010
Application Number:
20100208272
An interferometer system and method may be used to measure substrate thickness or shape. The system may include two spaced apart reference flats having that form an optical cavity between two parallel reference surfaces. A substrate holder may be configured to place the substrate in the cavity with first and second substrate surfaces substantially parallel with corresponding first and second reference surfaces such that a space between the first or second substrate surface is three…
USE OF DESIGN INFORMATION AND DEFECT IMAGE INFORMATION IN DEFECT CLASSIFICATION
Granted: August 19, 2010
Application Number:
20100208979
Defects observed by imaging tools may be classified by automatic comparison of features observed in a defect image with design information relating to corresponding portions of the image. Defect information may be generated from a defect image from a defect imaging tool. Design information relating to one or more structures to be formed on the substrate in a vicinity of the defect may be retrieved. The defect may be classified based on a combination of the defect information from the…
TDI Sensor Modules With Localized Driving And Signal Processing Circuitry For High Speed Inspection
Granted: July 29, 2010
Application Number:
20100188655
An inspection system for inspecting a surface of a wafer/mask/reticle can include a modular array. The modular array can include a plurality of time delay integration (TDI) sensor modules, each TDI sensor module having a TDI sensor and a plurality of localized circuits for driving and processing the TDI sensor. At least one of the localized circuits can control a clock associated with the TDI sensor. At least one light pipe can be used to distribute a source illumination to the plurality…
SYSTEMS AND METHODS FOR DETECTING DEFECTS ON A WAFER
Granted: July 29, 2010
Application Number:
20100188657
Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second…
SCATTEROMETRY METROLOGY TARGET DESIGN OPTIMIZATION
Granted: July 8, 2010
Application Number:
20100175033
A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target…
SPECTROSCOPIC SCATTEROMETER SYSTEM
Granted: July 1, 2010
Application Number:
20100165340
Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband…
Overlay Metrology Target
Granted: June 24, 2010
Application Number:
20100155968
In one embodiment, a metrology target for determining a relative shift between two or more successive layers of a substrate may comprise; an first structure on a first layer of a substrate and an second structure on a successive layer to the first layer of the substrate arranged to determine relative shifts in alignment in both the x and y directions of the substrate by analyzing the first structure and second structure overlay.
HYBRID DIFFRACTION MODELING OF DIFFRACTING STRUCTURES
Granted: June 24, 2010
Application Number:
20100157315
Diffraction modeling of a diffracting structure employing at least two distinct differential equation solution methods. In an embodiment, a rigorous coupled wave (RCW) method and a coordinate transform (C) method are coupled with a same S-matrix algorithm to provide a model profile for a scatterometry measurement of a diffracting structure having unknown parameters. In an embodiment, a rigorous coupled wave (RCW) method and a coordinate transform (C) method generate a modeled angular…
COMPONENT PACKAGE FOR MAINTAINING SAFE OPERATING TEMPERATURE OF COMPONENTS
Granted: June 24, 2010
Application Number:
20100155098
A thermally insulated electronic component package and an instrument suitable for process conditions in a high temperature environment are disclosed. The component package includes a thin electronic component, a thermally insulating outer enclosure, and an insert made of a thermally insulating material that is sized and shaped to fit within the outer enclosure. The insert includes an inner cavity sized and shaped to receive the thin electronic component. In the instrument, the outer…
System and Method for Controlling a Beam Source in a Workpiece Surface Inspection System
Granted: June 17, 2010
Application Number:
20100149527
A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The system features a variable scan speed beam scanning subsystem, preferably using an acousto-optic deflector, with beam compensation, so that variable scanning speeds can be achieved. Also included are…
METHODS AND SYSTEMS FOR DETECTING DEFECTS ON A RETICLE
Granted: June 10, 2010
Application Number:
20100142800
Methods and systems for detecting defects on a reticle are provided. One method includes printing a single die reticle in first areas of a wafer using different values of a parameter of a lithography process and at least one second area using a nominal value of the parameter. The method also includes acquiring first images of the first areas and second image(s) of the at least one second area. In addition, the method includes separately comparing the first images acquired for different…
MODULATED REFLECTANCE MEASUREMENT SYSTEM USING UV PROBE
Granted: June 3, 2010
Application Number:
20100134785
A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment,…
METHODS AND SYSTEMS FOR UTILIZING DESIGN DATA IN COMBINATION WITH INSPECTION DATA
Granted: May 13, 2010
Application Number:
20100119144
Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the…
Front Quartersphere Scattered Light Analysis
Granted: May 6, 2010
Application Number:
20100110419
A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The optical collection and detection system features, in the front quartersphere, a light channel assembly for collecting light reflected from the surface of the workpiece, and a front collector and wing…
Inspecting a Workpiece Using Polarization of Scattered Light
Granted: May 6, 2010
Application Number:
20100110420
A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The system features a variable polarization a polarizing relay assembly arranged to selectively permit the scattered light having a selected polarization orientation to pass along a detector optical axis to a…
APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY
Granted: April 15, 2010
Application Number:
20100091284
Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a ?1st diffraction order and a +1st diffraction order. It is determined whether there…
INLINE INSPECTION OF PHOTOVOLTAICS FOR ELECTRICAL DEFECTS
Granted: April 1, 2010
Application Number:
20100079147
A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the…
