Optical Inspection Apparatus and Method
Granted: September 11, 2008
Application Number:
20080218741
In one embodiment, a modulation spectroscopy method comprises the steps of directing a probe beam and a pump beam at a sample, modulating the pump beam, and the probe beam is reflected from the sample into a detector. The sample may include a strained semiconductor. The detector may produce as output an electrical signal which comprises a large d.c. signal proportional to reflectance R of the probe beam and a small a.c. modulated signal at the modulation frequency proportional to the…
Temperature effects on overlay accuracy
Granted: August 28, 2008
Application Number:
20080204678
A method for reducing overlay error in a photolithographic process, by providing a substrate having a permanent layer with a first pattern disposed therein, coating the substrate with photoresist, exposing the photoresist to a second pattern, while measuring temperatures at a plurality of different first positions across the substrate, developing the second pattern in the photoresist, measuring overlay errors between the first and second patterns at a plurality of different second…
Process Excursion Detection
Granted: August 28, 2008
Application Number:
20080204739
A method for analyzing defect information on a substrate, including logically dividing the substrate into zones, and detecting defects on the substrate to produce the defect information. The defect information from the substrate is analyzed on a zone by zone basis to produce defect level classifications for the defects within each zone. The zonal defect level classifications are analyzed according to at least one analysis method. The defect level classifications are preferably selected…
METHOD AND INSTRUMENT FOR CHEMICAL DEFECT CHARACTERIZATION IN HIGH VACUUM
Granted: August 21, 2008
Application Number:
20080197277
A method and the instrument for characterization of the defects on a surface with Auger electron spectroscopy in a high vacuum environment are disclosed. Defects on the surface of a sample may be characterized with Auger electron spectroscopy in a high vacuum environment at a pressure of about 10?7 Torr to 10?6 Torr.
Integrated Visible Pilot Beam for Non-Visible Optical Waveguide Devices
Granted: August 21, 2008
Application Number:
20080198385
In one embodiment, a radiation based analysis system comprises a first radiation source to generate first radiation having a wavelength outside the visible spectrum, a second radiation source to generate second radiation having a wavelength within the visible spectrum, and a waveguide coupler to couple a portion of the first radiation and a portion of the second radiation into a combined radiation beam such that the first radiation and the second radiation follow a path that is…
METHOD FOR DETERMINING LITHOGRAPHIC FOCUS AND EXPOSURE
Granted: August 14, 2008
Application Number:
20080192221
A method for determining one or more process parameter settings of a photolithographic system is disclosed.
SURFACE CHARACTERISTIC ANALYSIS
Granted: July 31, 2008
Application Number:
20080180656
In one embodiment, a system to measure defects on a surface of a wafer and an edge of the wafer using a single tool comprises a scatterometer to identify at least one defect region on the surface and a surface profile height measuring tool to measure one or more characteristics of the surface in the defect region with a surface profile height measuring tool.
PURGE GAS FLOW CONTROL FOR HIGH-PRECISION FILM MEASUREMENTS USING ELLIPSOMETRY AND REFLECTOMETRY
Granted: July 31, 2008
Application Number:
20080180698
An optical method and system for measuring characteristics of a sample using a broadband metrology tool in a purge gas flow environment are disclosed. In the method a beam path for the metrology tool is purged with purge gas at a first flow rate. A surface of the sample is illuminated by a beam of source radiation having at least one wavelength component in a vacuum ultraviolet (VUV) range and/or at least one wavelength component in an ultraviolet-visible (UV-Vis) range. A flow rate of a…
Optical System For Detecting Anomalies And/Or Features Of Surfaces
Granted: July 10, 2008
Application Number:
20080165343
A surface inspection of the system applies a first oblique illumination beam and may also apply a second illumination beam to illuminate a surface either sequentially or simultaneously. Radiation reflected or scattered is collected by preferably three collection channels and detected by three corresponding detector arrays, although a different number of channels and detector arrays may be used. One or both illumination beams are focused to a line on the surface to be inspected and each…
SUBSTRATE PROCESSING APPARATUS AND METHOD
Granted: June 19, 2008
Application Number:
20080142733
A substrate processing apparatus and method are disclosed.
Coherent DUV illumination for semiconductor wafer inspection
Granted: May 8, 2008
Application Number:
20080105835
An apparatus for inspecting a specimen, such as a semiconductor wafer, is provided. The apparatus comprises a laser energy source, such as a deep ultraviolet (DUV) energy source and an optical fiber arrangement. The optical fiber arrangement comprises a core surrounded by a plurality of optical fibers structures used to frequency broaden energy received from the laser energy source into frequency broadened radiation. The frequency broadened radiation is employed as an illumination source…
Dual stage defect region identification and defect detection method and apparatus
Granted: May 8, 2008
Application Number:
20080106740
A method and apparatus for inspecting patterned substrates, such as photomasks, for unwanted particles and features occurring on the transmissive as well as pattern defects. A transmissive substrate is illuminated by a laser through an optical system comprised of a laser scanning system, individual transmitted and reflected light collection optics and detectors collect and generate signals representative of the light transmitted and reflected by the substrate. The defect identification…
APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY
Granted: April 24, 2008
Application Number:
20080094630
Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second…
METHOD FOR GENERATING A DESIGN RULE MAP HAVING SPATIALLY VARYING OVERLAY BUDGET
Granted: March 27, 2008
Application Number:
20080077894
The invention is a method for generating a design rule map having a spatially varying overlay error budget. Additionally, the spatially varying overlay error budget can be employed to determine if wafers are fabricated in compliance with specifications. In one approach a design data file that contains fabrication process information and reticle information is processed using design rules to obtain a design map with a spatially varying overlay error budget that defines a localized…
APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY
Granted: February 28, 2008
Application Number:
20080049226
Disclose is a combined scatterometry mark comprising a scatterometry critical dimension (CD) or profile target capable of being measured to determine CD or profile information and a scatterometry overlay target disposed over the scatterometry CD or profile target, the scatterometry overlay target cooperating with the scatterometry CD or profile target to form a scatterometry mark capable of being measured to determine overlay.
High throughput darkfield/brightfield wafer inspection system using advanced optical techniques
Granted: January 10, 2008
Application Number:
20080007726
The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39…
NANO-ELECTRODE-ARRAY FOR INTEGRATED CIRCUIT INTERCONNECTS
Granted: December 13, 2007
Application Number:
20070284746
An integrated circuit is provided including an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is over the dielectric layer in the trench and via, and a conductor is over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.
Methods and Systems for Detecting Defects on a Specimen Using a Combination of Bright Field Channel Data and Dark Field Channel Data
Granted: December 13, 2007
Application Number:
20070286473
Various methods, carrier media, and systems for detecting defects on a specimen using a combination of bright field channel data and dark field channel data are provided. One computer-implemented method includes combining pixel-level data acquired for the specimen by a bright field channel and a dark field channel of an inspection system. The method also includes detecting defects on the specimen by applying a two-dimensional threshold to the combined data. The two-dimensional threshold…
ORDER SELECTED OVERLAY METROLOGY
Granted: December 6, 2007
Application Number:
20070279630
Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific…
Method and System for Perpendicular Magnetic Media Metrology
Granted: November 15, 2007
Application Number:
20070262771
A metrology system for measuring the magnetic properties of a magnetic recording medium layer on a device used for perpendicular recording.
