METHODS FOR GENERATING A STANDARD REFERENCE DIE FOR USE IN A DIE TO STANDARD REFERENCE DIE INSPECTION AND METHODS FOR INSPECTING A WAFER
Granted: February 12, 2009
Application Number:
20090041332
Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer are provided. One computer-implemented method for generating a standard reference die for use in a die to standard reference die inspection includes acquiring output of an inspection system for a centrally located die on a wafer and one or more dies located on the wafer. The method also includes combining the output for the centrally located die and the…
Optical Measurement Apparatus and Method
Granted: February 5, 2009
Application Number:
20090033931
An optical modulation spectroscopy system comprises a probe beam source and components for directing the probe beam at a sample. It also may comprise a modulated pump beam source and components for directing a modulated pump beam at the sample. A dispersive system may disperse the reflected probe beam into constituent wavelengths to provide dispersed beams. A detector array may detect multiple dispersed reflected probe beams and processes a signal corresponding to each. Thus, measurement…
SUBSTRATE PROCESSING APPARATUS AND METHOD
Granted: January 29, 2009
Application Number:
20090028683
Substrate processing methods and apparatus are disclosed. In some embodiments a substrate processing apparatus may comprise a support structure and a moveable stage including first and second stages. The moveable stage has one or more maglev units attached to the first stage and/or second stage proximate an edge of the first stage. The first stage retains one or more substrates and moves with respect to a first axis that is substantially fixed with respect to the second stage. The second…
SCATTEROMETRY TARGET AND METHOD
Granted: January 15, 2009
Application Number:
20090015821
Embodiments of the invention include a SCOL targeting groups configured to increase target to target separation and thereby increase target utility to simultaneous exposures to multiple illumination dots and associated inspection methodologies. The embodiments of the invention further relate to apparatus for projection simultaneous illumination dots onto different targets of the same targeting group on a wafer to conduct multiple simultaneous target inspections. Embodiments of the…
SYSTEMS AND METHODS FOR INSPECTING A WAFER WITH INCREASED SENSITIVITY
Granted: January 8, 2009
Application Number:
20090009754
One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the…
TUNGSTEN PLUG DEPOSITION QUALITY EVALUATION METHOD BY EBACE TECHNOLOGY
Granted: January 8, 2009
Application Number:
20090010526
A first embodiment of the invention relates to a method for evaluating the quality of structures on an integrated circuit wafer. Test structures formed on either on the integrated or on a test wafer are exposed to an electron beam and an electron-beam activated chemical etch. The electron-beam activated etching gas or vapor etches the test structures, which are analyzed after etching to determine a measure of quality of the test structures. The measure of quality may be used in a…
FEEDFORWARD/FEEDBACK LITHO PROCESS CONTROL OF STRESS AND OVERLAY
Granted: December 25, 2008
Application Number:
20080316442
A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a lithographic patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The lithographic patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables.
SYSTEM AND METHOD FOR CONTROLLING LIGHT SCATTERED FROM A WORKPIECE SURFACE IN A SURFACE INSPECTION SYSTEM
Granted: December 11, 2008
Application Number:
20080304057
In one embodiment, a surface analyzer system comprises a radiation targeting assembly to target a radiation beam onto a surface; and a scattered radiation collecting assembly that collects radiation scattered from the surface. The radiation targeting assembly generates primary and secondary beams. Data collected from the reflections of the primary and secondary beams may be used in a dynamic range extension routine, alone or in combination with a power attenuation routine.
METHOD AND APPARATUS FOR OPTICALLY ANALYZING A SURFACE
Granted: December 11, 2008
Application Number:
20080304078
In one embodiment, a system to measure defects on a surface of a wafer and an edge of the wafer using a single tool comprises a radial motor to move an optical head in a radial direction to detect defects at locations displaced from the edge of the wafer, and a rotational motor to rotate the optical head around the edge of the wafer to detect defects on the edge of the wafer.
Inspection Systems and Methods for Extending the Detection Range of an Inspection System by Forcing the Photodetector into the Non-Linear Range
Granted: November 27, 2008
Application Number:
20080291454
An inspection system and method is provided herein for increasing the detection range of the inspection system. According to one embodiment, the inspection system may include a photodetector having a plurality of stages, which are adapted to convert light scattered from a specimen into an output signal, and a voltage divider network coupled for extending the detection range of the photodetector (and thus, the detection range of the inspection system) by saturating at least one of the…
MEASURING THE SHAPE, THICKNESS VARIATION, AND MATERIAL INHOMOGENEITY OF A WAFER
Granted: November 20, 2008
Application Number:
20080285053
In one embodiment, an interferometer system comprises an unequal path interferometer assemble comprising; a first reference flat having a first length L1 in a first dimension, a second reference flat having a second length L2 in the first dimension, a cavity D1 defined by a distance between the first reference flat and the second reference flat, and a receptacle to receive an object in the cavity such that an optical path remains open between the first reference flat and the second…
Reduced coherence symmetric grazing incidence differential interferometer
Granted: November 13, 2008
Application Number:
20080278732
A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a diffraction grating that widens and passes nth order (n>0) wave fronts to the specimen surface and a reflective surface for each channel of the light beam. Two channels and two reflective surfaces are preferably employed, and the wavefronts are combined using a second diffraction grating and passed to a camera system having a desired aspect ratio.…
Confocal wafer inspection system and method
Granted: November 6, 2008
Application Number:
20080273196
A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an…
OPTICAL GAIN APPROACH FOR ENHANCEMENT OF OVERLAY AND ALIGNMENT SYSTEMS PERFORMANCE
Granted: October 30, 2008
Application Number:
20080266561
A resultant image of a grating target may be obtained by dividing an image of the target into first and second portions and optically modifying the first and/or second portion such that a final image formed from their combination is characterized by a Moiré pattern. The resultant image may be analyzed to determine a shift in the grating target from a shift in the Moiré pattern. Optical alignment apparatus may include a first beam splitter, an image transformation element optically…
Catadioptric imaging system employing immersion liquid for use in broad band microscopy
Granted: October 9, 2008
Application Number:
20080247035
A reduced size catadioptric inspection system employing a catadioptric objective and immersion substance is disclosed. The objective may be employed with light energy having a wavelength in the range of approximately 190 nanometers through the infrared light range, and can provide numerical apertures in excess of 0.9. Elements are less than 100 millimeters in diameter and may fit within a standard microscope. The objective comprises a focusing lens group, a field lens, a Mangin mirror…
STABILIZING A SUBSTRATE USING A VACUUM PRELOAD AIR BEARING CHUCK
Granted: September 25, 2008
Application Number:
20080229811
Substrate processing method and apparatus are disclosed. The substrate processing apparatus includes a non-contact air bearing chuck with a vacuum preload.
Optical Measurement Apparatus and Method
Granted: September 18, 2008
Application Number:
20080225267
An optical measurement apparatus and method a method for performing modulation spectroscopy measurement of a sample comprising: delivering an incident probe beam to a sample at a known spot; modulating reflectance of the probe beam with a pump beam which periodically forms a pump beam spot on the sample coincident with the probe beam spot; and monitoring a reflected probe beam with a detector: wherein the incident probe and pump beams are collinear; and wherein the incident beams are…
Detection system for nanometer scale topographic measurements of reflective surfaces
Granted: September 18, 2008
Application Number:
20080225275
A linear position array detector system is provided which imparts light energy to a surface of a specimen, such as a semiconductor wafer, receives light energy from the specimen surface and monitors deviation of the retro or reflected beam from that expected to map the contours on the specimen surface. The retro beam will, with ideal optical alignment, return along the same path as the incident beam if and only if the surface is normal to the beam. The system has a measurement device or…
Beam delivery system for laser dark-field illumination in a catadioptric optical system
Granted: September 18, 2008
Application Number:
20080225282
A method and apparatus for inspecting a specimen are provided. The apparatus comprises a primary illumination source, a catadioptric objective exhibiting central obscuration that directs light energy received from the primary illumination source at a substantially normal angle toward the specimen, and an optical device, such as a prism or reflective surface, positioned within the central obscuration resulting from the catadioptric objective for receiving further illumination from a…
High throughput brightfield/darkfield water inspection system using advanced optical techniques
Granted: September 18, 2008
Application Number:
20080225298
The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39…
