TWO-DIMENSIONAL UV COMPATIBLE PROGRAMMABLE SPATIAL FILTER
Granted: January 1, 2004
Application Number:
20040001198
Disclosed are mechanisms for selectively filtering spatial portions of light emanating from a sample under inspection within an optical system. In one embodiment, a programmable spatial filter (PSF) is constructed from materials that are compatible with light in a portion of the UV wavelength range. In a specific implementation, the PSF is constructed from a UV compatible material, such as a polymer stabilized liquid crystal material. In a further aspect, the PSF also includes a pair of…
Overlay metrology and control method
Granted: December 4, 2003
Application Number:
20030223630
An overlay method for determining the overlay error of a device structure formed during semiconductor processing is disclosed. The overlay method includes producing calibration data that contains overlay information relating the overlay error of a first target at a first location to the overlay error of a second target at a second location for a given set of process conditions. The overlay method also includes producing production data that contains overlay information associated with a…
Defect detection system
Granted: November 13, 2003
Application Number:
20030210393
Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal…
Overlay alignment mark design
Granted: November 6, 2003
Application Number:
20030206303
A mark comprising at least one set of calibration periodic structures and at least two sets of test periodic structures, both types of which are positioned along an axis. The mark is used to measure the relative position between two layers of a device. Each set of test periodic structures has its periodic structures formed within first and second sections. The periodic structures of the first and second sections are each formed on one of the two layers of the device, respectively. The…
UV compatible programmable spatial filter
Granted: October 2, 2003
Application Number:
20030184739
Disclosed are mechanisms for selectively filtering spatial portions of light emanating from a sample under inspection within an optical system. In one embodiment, a programmable spatial filter (PSF) is constructed from materials that are compatible with light in a portion of the UV wavelength range. In a specific implementation, the PSF is constructed from a UV compatible material, such as a polymer stabilized liquid crystal material. In a further aspect, the PSF also includes a pair of…
Multiple directional scans of test structures on srmiconductor integrated circuits
Granted: August 21, 2003
Application Number:
20030155927
Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test…
Methods and apparatus for dishing and erosion characterization
Granted: July 31, 2003
Application Number:
20030142782
The present invention includes a system for efficient and effective detection and characterization of dishing and/or erosion. An x-ray emission inducer is used to scan a target on a sample. The target can be scanned at an acute incident angle to allow characterization of the dishing and/or erosion and analysis of the metallization or thin film layer topology.
Mechanisms for making and inspecting reticles
Granted: July 31, 2003
Application Number:
20030142860
A reusable circuit design for use with electronic design automation EDA tools in designing integrated circuits is disclosed, as well as reticle inspection and fabrication methods that are based on such reusable circuit design. The reusable circuit design is stored on a computer readable medium and contains an electronic representation of a layout pattern for at least one layer of the circuit design on an integrated circuit. The layout pattern includes a flagged critical region which…
System and method for determining reticle defect printability
Granted: July 24, 2003
Application Number:
20030138138
A method and software program for determining printability of a defect on a reticle or photomask onto a substrate during processing. That is performed by creating a pixel grid image having a plurality of individual pixel images showing the defect. A gray scale value is assigned to each pixel image of the pixel grid image and a probable center pixel of the defect is selected. Then the polarity of the defect is determined, with a coarse center pixel of the defect optionally selected using…
Photoelectron emission microscope for wafer and reticle inspection
Granted: June 19, 2003
Application Number:
20030111601
A method of inspecting and imaging substrates with an electron beam. The method can include a illuminating the substrate with a photon beam to cause photoemission of electrons. A low energy electron beam can be used to prevent or reduce positive charging of the substrate. Reflected electrons and/or emitted photoelectrons can be imaged to review or inspect the substrate.
Test structures and methods for inspection of semiconductor integrated circuits
Granted: May 22, 2003
Application Number:
20030096436
Disclosed is a semiconductor die having a scanning area. The semiconductor die includes a first plurality of test structures wherein each of the test structures in the first plurality of test structures is located entirely within the scanning area. The semiconductor die further includes a second plurality of test structures wherein each of the test structures in the first plurality of test structures is located only partially within the scanning area. The test structures are arranged so…
Apparatus and methods for managing reliability of semiconductor devices
Granted: May 22, 2003
Application Number:
20030097228
Disclosed are methods and apparatus for determining whether to perform burn-in on a semiconductor product, such as a product wafer or product wafer lot. In general terms, test structures on the semiconductor product are inspected to extract yield information, such as defect densities. Since this yield information is related to the early or extrinsic instantaneous failure rate, one may then determine the instantaneous extrinsic failure rate for one or more failure mechanisms, such as…
Apparatus and methods for collecting global data during a reticle inspection
Granted: May 15, 2003
Application Number:
20030091224
Disclosed is a method of inspecting a reticle defining a circuit layer pattern that is used within a corresponding semiconductor process to generate corresponding patterns on a semiconductor wafer. A test image of the reticle is provided, and the test image has a plurality of test characteristic values. A baseline image containing an expected pattern of the test image is also provided. The baseline image has a plurality of baseline characteristic values that correspond to the test…
APPARATUS AND METHODS FOR REDUCING THIN FILM COLOR VARIATION IN OPTICAL INSPECTION OF SEMICONDUCTOR DEVICES AND OTHER SURFACES
Granted: May 8, 2003
Application Number:
20030086080
Disclosed are methods and apparatus for designing an optical spectrum of an illumination light beam within an optical inspection system. A set of conditions for inspecting a film on a sample by directing an illumination light beam at the sample is determined. At least a portion of the illumination light beam is reflected off the sample and used to generate an image of at least a portion of the film on the sample. A plurality of peak wavelength values are determined for the optical…
WAFER INSPECTION USING OPTIMIZED GEOMETRY
Granted: May 8, 2003
Application Number:
20030086082
The present invention pertains to an optical inspection system capable of obtaining very high signal-to-noise ratio data and that is capable of high speed scanning rates. The ability to obtain high signal-to-noise data is obtained by selecting parts of the scattering hemisphere where signal from a defect is high and noise due to scattering from wafers structures is low. One embodiment of the optical inspection system includes a set of lenses used to form an image of the inspected…
Apparatus and methods for semiconductor IC failure detection
Granted: April 17, 2003
Application Number:
20030071261
An improved voltage contrast test structure is disclosed. In general terms, the test structure can be fabricated in a single photolithography step or with a single reticle or mask. The test structure includes substructures which are designed to have a particular voltage potential pattern during a voltage contrast inspection. For example, when an electron beam is scanned across the test structure, an expected pattern of intensities are produced and imaged as a result of the expected…
Apparatus and methods for semiconductor IC failure detection
Granted: April 17, 2003
Application Number:
20030071262
An improved voltage contrast test structure is disclosed. In general terms, the test structure can be fabricated in a single photolithography step or with a single reticle or mask. The test structure includes substructures which are designed to have a particular voltage potential pattern during a voltage contrast inspection. For example, when an electron beam is scanned across the test structure, an expected pattern of intensities are produced and imaged as a result of the expected…
Methods and apparatus for defect localization
Granted: April 3, 2003
Application Number:
20030062477
The present invention includes a system for localization of defects in test samples. A sample is scanned using a particle beam. Some particles interact with conductive elements and may cause the emission of x-rays. Other particles can pass through the sample entirely and generate a current that can be measured. A higher current generated indicates less conductive material at the scan target that may mean a void, dishing, or erosion is present. Localization of a defect can be confirmed…
Methods and apparatus for void characterization
Granted: April 3, 2003
Application Number:
20030063705
The present invention provides a system for characterizing voids in test samples. An x-ray emission inducer scans a target such as a via on a test sample. A metallization or thin film layer emits x-rays as a result of the scan. The x-ray emission intensity can be measured and compared against a control measurement. The information obtained can be used to characterize a void in the scan target.
Apparatus and methods for reliable and efficient detection of voltage contrast defects
Granted: January 2, 2003
Application Number:
20030001598
Disclosed are methods and apparatus for automatically filtering out physical defects from electrical defects that are found during a voltage contrast inspection of a test structure on a semiconductor device. In general terms, the test structure is designed to include a plurality of features that will charge to specific voltage potentials when scanned with an electron beam during a voltage contrast inspection. Images of the scanned features are generated, and the relative brightness level…
