Periodic patterns and technique to control misalignment
Granted: January 2, 2003
Application Number:
20030002043
A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal.
High NA system for multiple mode imaging
Granted: January 2, 2003
Application Number:
20030002147
A system for multiple mode imaging is disclosed herein. The system is a catadioptric system preferably having an NA greater than 0.9, highly corrected for low and high order monochromatic aberrations. This system uses unique illumination entrances and can collect reflected, diffracted, and scattered light over a range of angles. The system includes a catadioptric group, focusing optics group, and tube lens group. The catadioptric group includes a focusing mirror and a refractive…
IN-SITU END POINT DETECTION FOR SEMICONDUCTOR WAFER POLISHING
Granted: January 2, 2003
Application Number:
20030003605
The present invention relates to in-situ techniques for determining process end points in semiconductor wafer polishing processes. Generally, the technique involves utilizing a scanning inspection machine having multiple pair of lasers and sensors located at different angles for detecting signals caused to emanate from an inspected specimen. The detection techniques determine the end points by differentiating between various material properties within a wafer. An accompanying algorithm…
Apparatus and methods for monitoring self-aligned contact arrays
Granted: January 2, 2003
Application Number:
20030003611
Disclosed are methods and apparatus for detecting defects in a partially fabricated semiconductor device with self-aligned contacts. The self-aligned contacts are formed from a first layer with a plurality of contact portions, a second layer with a plurality of conductive lines that are each aligned proximate to an associated underlying contact portion, and a third insulating layer formed over the conductive lines and their proximate underlying contact portions. The third insulating…
Inspectable buried test structures and methods for inspecting the same
Granted: December 12, 2002
Application Number:
20020187582
Disclosed is a semiconductor die having a lower test structure formed in a lower metal layer of the semiconductor die. The lower conductive test structure has a first end and a second end. The first end is coupled to a predetermined voltage level. The semiconductor die also includes an insulating layer formed over the lower metal layer. The die further includes an upper test structure formed in an upper metal layer of the semiconductor die. The upper conductive test structure is coupled…
Efficient phase defect detection system and method
Granted: November 21, 2002
Application Number:
20020171825
The ability to inspect photomasks for errors or defects in phase-shifters is greatly enhanced using optical techniques based on multiple modified radiation collection techniques. In particular, the apparatus and methods of the invention allows for errors in phase-shifters to be more accurately detected, even in the presence of regular amplitude objects such as grid lines. In one embodiment, the intensities of two slightly defocused images of phase objects corresponding to the same…
Method and apparatus for inspecting a substrate
Granted: October 31, 2002
Application Number:
20020161534
A method and apparatus for inspection and review of defects is disclosed wherein data gathering is improved. In one embodiment, multiple or segmented detectors are used in a particle beam system.
Method and apparatus for scanning, stitching, and damping measurements of a double-sided metrology inspection tool
Granted: October 24, 2002
Application Number:
20020154296
A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes…
Simultaneous flooding and inspection for charge control in an electron beam inspection machine
Granted: September 19, 2002
Application Number:
20020130260
Disclosed are methods and apparatus for simultaneously flooding a sample (e.g., a semiconductor wafer) to control charge and inspecting the sample. The apparatus includes a charged particle beam generator arranged to generate a charged particle beam substantially towards a first portion of the sample and a flood gun for generating a second beam towards a second portion of the sample. The second beam is generated substantially simultaneously with the inspection beam. The apparatus further…
System and method for determining reticle defect printability
Granted: September 12, 2002
Application Number:
20020126888
A method and software program for determining printability of a defect on a reticle or photomask onto a substrate during processing. That is performed by creating a pixel grid image having a plurality of individual pixel images showing the defect. A gray scale value is assigned to each pixel image of the pixel grid image and a probable center pixel of the defect is selected. Then the polarity of the defect is determined, with a coarse center pixel of the defect optionally selected using…
High throughput brightfield/darkfield wafer inspection system using advanced optical techniques
Granted: August 29, 2002
Application Number:
20020118359
The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39…
Massively parallel inspection and imaging system
Granted: December 6, 2001
Application Number:
20010048521
A massively parallel inspection and imaging system is provided which employs multiple focused beams to illuminate a specimen. Laser light energy passes through a relatively low resolution diffraction grating or digital optical element, which is either one or two dimensional, and concentrates the transmitted energy into multiple discrete directions or orders. The beams split by the diffraction grating pass through a beam expander or telescope and are recombined onto an optical element and…
Edge handling wafer chuck
Granted: August 16, 2001
Application Number:
20010013684
An edge handling chuck which operates to maintain a semiconductor wafer at a desirable orientation while rotating the wafer at high speeds is disclosed. The edge handling chuck consists of a cylindrical plate which holds a silicon wafer using multiple spring loaded edge wafer clamps. Gas passes through a center hole in the cylindrical plate and is dispersed to the atmosphere using multiple pressure relief openings in the cylindrical plate. The purpose of this gas arrangement is to…
DETECTION SYSTEM FOR NANOMETER SCALE TOPOGRAPHIC MEASUREMENTS OF REFLECTIVE SURFACES
Granted: August 16, 2001
Application Number:
20010013936
A linear position array detector system is provided which imparts light energy to a surface of a specimen, such as a semiconductor wafer, receives light energy from the specimen surface and monitors deviation of the retro or reflected beam from that expected to map the contours on the specimen surface. The retro beam will, with ideal optical alignment, return along the same path as the incident beam if and only if the surface is normal to the beam. The system has a measurement device or…
