Methods and systems for co-located metrology
Granted: October 13, 2020
Patent Number:
10804167
Methods and systems for performing co-located measurements of semiconductor structures with two or more measurement subsystems are presented herein. To achieve a sufficiently small measurement box size, the metrology system monitors and corrects the alignment of the measurement spot of each metrology subsystem with a metrology target to achieve maximum co-location of the measurement spots of each metrology subsystem with the metrology target. In another aspect, measurements are performed…
Photocathode designs and methods of generating an electron beam using a photocathode
Granted: October 13, 2020
Patent Number:
10804069
A photocathode can include a body fabricated of a wide bandgap semiconductor material, a metal layer, and an alkali halide photocathode emitter. The body may have a thickness of less than 100 nm and the alkali halide photocathode may have a thickness less than 10 nm. The photocathode can be illuminated with a dual wavelength scheme.
Metrology tool with combined X-ray and optical scatterometers
Granted: October 13, 2020
Patent Number:
10801975
Methods and systems for performing simultaneous optical scattering and small angle x-ray scattering (SAXS) measurements over a desired inspection area of a specimen are presented. SAXS measurements combined with optical scatterometry measurements enables a high throughput metrology tool with increased measurement capabilities. The high energy nature of x-ray radiation penetrates optically opaque thin films, buried structures, high aspect ratio structures, and devices including many thin…
Algorithm selector based on image frames
Granted: October 13, 2020
Patent Number:
10801968
Based on job dumps for defects of interest and nuisance events for multiple optical modes, detection algorithms, and attributes, the best combination of the aforementioned is identified. Combinations of each of the modes with each of the detection algorithms can be compared for all the defects of interest detected at an offset of zero. Capture rate versus nuisance rate can be determined for one of the attributes in each of the combinations.
Semiconductor metrology based on hyperspectral imaging
Granted: October 13, 2020
Patent Number:
10801953
Methods and systems for performing semiconductor measurements based on hyperspectral imaging are presented herein. A hyperspectral imaging system images a wafer over a large field of view with high pixel density over a broad range of wavelengths. Image signals collected from a measurement area are detected at a number of pixels. The detected image signals from each pixel are spectrally analyzed separately. In some embodiments, the illumination and collection optics of a hyperspectral…
System and method for fabricating semiconductor wafer features having controlled dimensions
Granted: October 6, 2020
Patent Number:
10796969
A system and method are provided for fabricating semiconductor wafer features with controlled dimensions. In use, a top surface of a semiconductor wafer is identified. A first portion of the top surface of the semiconductor wafer is then vertically etched to form a step down from a second portion of the top surface of the semiconductor wafer, the step comprised of a horizontal face and a vertical sidewall. Additionally, a film is uniformly deposited across the horizontal face and the…
Hybrid design layout to identify optical proximity correction-related systematic defects
Granted: October 6, 2020
Patent Number:
10796065
Defects can be identified using a hybrid design layout that includes a printable layer and a non-printed layer. The hybrid design layout can be generated by incorporating at least a portion of the non-printable layer layout with the printable layer layout. Defects can be identified using optical or scanning electron beam images.
Prediction based chucking and lithography control optimization
Granted: September 29, 2020
Patent Number:
10788759
Prediction based systems and methods for optimizing wafer chucking and lithography control are disclosed. Distortions predicted to occur when a wafer is chucked by a chucking device are calculated and are utilized to control chucking parameters of the chucking device. Chucking parameters may include chucking pressures and chucking sequences. In addition, predicted distortions may also be utilized to facilitate application of anticipatory corrections. Controlling chucking parameters…
Scanning electron microscope objective lens calibration using X-Y voltages iteratively determined from images obtained using said voltages
Granted: September 29, 2020
Patent Number:
10790114
Objective lens alignment of a scanning electron microscope review tool with fewer image acquisitions can be obtained using the disclosed techniques and systems. Two different X-Y voltage pairs for the scanning electron microscope can be determined based on images. A second image based on the first X-Y voltage pair can be used to determine a second X-Y voltage pair. The X-Y voltage pairs can be applied at the Q4 lens or other optical components of the scanning electron microscope.
Semi-supervised anomaly detection in scanning electron microscope images
Granted: September 29, 2020
Patent Number:
10789703
Autoencoder-based, semi-supervised approaches are used for anomaly detection. Defects on semiconductor wafers can be discovered using these approaches. The model can include a variational autoencoder, such as a one that includes ladder networks. Defect-free or clean images can be used to train the model that is later used to discover defects or other anomalies.
Multiple column per channel CCD sensor architecture for inspection and metrology
Granted: September 15, 2020
Patent Number:
10778925
A multiple-column-per-channel image CCD sensor utilizes a multiple-column-per-channel readout circuit including connected transfer gates that alternately transfer pixel data (charges) from a group of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at multiple times the line clock rate to pass the image…
Process condition sensing device and method for plasma chamber
Granted: September 15, 2020
Patent Number:
10777393
A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the…
Multi-column spacing for photomask and reticle inspection and wafer print check verification
Granted: September 15, 2020
Patent Number:
10777377
A multi-column assembly for a scanning electron microscopy (SEM) system is disclosed. The multi-column assembly includes a plurality of electron-optical columns arranged in an array defined by one or more spacings. Each electron-optical column includes one or more electron-optical elements. The plurality of electron-optical columns is configured to characterize one or more field areas on a surface of a sample secured on a stage. The number of electron-optical columns in the plurality of…
Full beam metrology for X-ray scatterometry systems
Granted: September 15, 2020
Patent Number:
10775323
Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered…
Transmission small-angle X-ray scattering metrology system
Granted: September 8, 2020
Patent Number:
10767978
Methods and systems for characterizing dimensions and material properties of semiconductor devices by transmission small angle x-ray scatterometry (TSAXS) systems having relatively small tool footprint are described herein. The methods and systems described herein enable Q space resolution adequate for metrology of semiconductor structures with reduced optical path length. In general, the x-ray beam is focused closer to the wafer surface for relatively small targets and closer to the…
Method and system for edge-of-wafer inspection and review
Granted: September 8, 2020
Patent Number:
10770258
An electron-optical system for inspecting or reviewing an edge portion of a sample includes an electron beam source configured to generate one or more electron beams, a sample stage configured to secure the sample and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample. The system also includes a sample position reference device disposed about the sample and a…
Dual mode inspector
Granted: September 8, 2020
Patent Number:
10769769
A dual mode inspector includes an optical inspector configured to detect a defect located at a first location on a sample, a microscope configured to capture an image of the defect at the first location on the sample, and a platform that is configured to support the sample. The sample is not removed from the platform between the detecting of the defect located at the first location on the sample and the capturing of the image of the defect at the first location on the sample. The dual…
Generating high resolution images from low resolution images for semiconductor applications
Granted: September 8, 2020
Patent Number:
10769761
Methods and systems for generating a high resolution image for a specimen from a low resolution image of the specimen are provided. One system includes one or more computer subsystems configured for acquiring a low resolution image of a specimen. The system also includes one or more components executed by the one or more computer subsystems. The one or more components include a deep convolutional neural network that includes one or more first layers configured for generating a…
Integrated use of model-based metrology and a process model
Granted: September 8, 2020
Patent Number:
10769320
Methods and systems for performing measurements based on a measurement model integrating a metrology-based target model with a process-based target model. Systems employing integrated measurement models may be used to measure structural and material characteristics of one or more targets and may also be used to measure process parameter values. A process-based target model may be integrated with a metrology-based target model in a number of different ways. In some examples, constraints…
Method and system for generating programmed defects for use in metrology measurements
Granted: September 8, 2020
Patent Number:
10768533
A system for generating and implementing programmed defects includes a lithography tool configured to form a multi-pattern structure including a first array pattern and a second array pattern on a sample. The first array pattern or the second array pattern contains a programmed defect to differentiate the first array pattern from the second array pattern. The system includes a metrology tool configured to acquire one or more images of the first array pattern and the second array pattern…
