COMPONENT OF A PLASMA PROCESSING APPARATUS HAVING A PROTECTIVE IN SITU FORMED LAYER ON A PLASMA EXPOSED SURFACE
Granted: November 13, 2014
Application Number:
20140335698
A component of a plasma processing chamber having a protective liquid layer on a plasma exposed surface of the component. The protective liquid layer can be replenished by supplying a liquid to a liquid channel and delivering the liquid through liquid feed passages in the component. The component can be an edge ring which surrounds a semiconductor substrate supported on a substrate support in a plasma processing apparatus wherein plasma is generated and used to process the semiconductor…
PULSED DIELECTRIC ETCH PROCESS FOR IN-SITU METAL HARD MASK SHAPE CONTROL TO ENABLE VOID-FREE METALLIZATION
Granted: November 13, 2014
Application Number:
20140335697
An all-in-one trench-over-via etch wherein etching of a low-k material beneath a metal hard mask of titanium nitride containing material is carried out in alternating steps of (a) etching the low-k material while maintaining chuck temperature at about 45 to 80° C. and (b) metal hard mask rounding and Ti-based residues removal while maintaining chuck temperature at about 90 to 130° C.
Controls of Ambient Environment During Wafer Drying Using Proximity Head
Granted: November 13, 2014
Application Number:
20140332037
A method for processing a substrate is provided which includes generating a fluid meniscus to process the substrate and applying the fluid meniscus to a surface of the substrate. The method further includes reducing evaporation of fluids from a surface in the substrate processing environment.
CONTINUOUS PLASMA ETCH PROCESS
Granted: November 6, 2014
Application Number:
20140329391
A method for etching features with a continuous plasma is provided. A first plasma process is provided, comprising providing a flow of a first process gas into a process chamber, maintaining the continuous plasma, and stopping the flow of the first process gas into the process chamber. A transition process is provided, comprising providing a flow of a transition gas into the process chamber, maintaining the continuous plasma, and stopping the flow of the transition gas into the process…
ANISOTROPIC HIGH RESISTANCE IONIC CURRENT SOURCE (AHRICS)
Granted: November 6, 2014
Application Number:
20140326608
An electroplating apparatus that promotes uniform electroplating on the substrates having thin seed layers includes a convex anisotropic high resistance ionic current source (AHRICS), such as an electrolyte-permeable resistive domed plate. The AHRICS is positioned in close proximity of the substrate, so that a distance from the central portion of the AHRICS to the substrate is smaller than the distance from the edge portion of the AHRICS to the substrate. The apparatus further includes a…
INTERNAL PLASMA GRID FOR SEMICONDUCTOR FABRICATION
Granted: October 9, 2014
Application Number:
20140302681
The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid may have slots of a particular aspect ratio which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the…
MULTI-SEGMENT ELECTRODE ASSEMBLY AND METHODS THEREFOR
Granted: October 9, 2014
Application Number:
20140299273
A multi-segment electrode assembly having a plurality of electrode segments for modifying a plasma in a plasma processing chamber is disclosed. There is included a first powered electrode segment having a first plasma-facing surface, the first powered electrode segment configured to be powered by a first RE signal. There is also included a second powered electrode segment having a second plasma-facing surface, the second powered electrode segment configured to be powered by a second RE…
DENSE OXIDE COATED COMPONENT OF A PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF
Granted: October 2, 2014
Application Number:
20140295670
A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide…
COLLECTOR FOR USE WITH AN APPARATUS FOR TREATING WAFER-SHAPED ARTICLES
Granted: September 25, 2014
Application Number:
20140283935
A collector assembly for use with a spin chuck includes a base component, a top component and a first intermediate component configured to be fitted between the base component and the top component. The base, top and first intermediate components are configured so as to be interconnectable to form a process enclosure and so as to be separable from one another. The base component and the intermediate component each comprise collector wall segments such that when the base, top and first…
APPARATUS FOR TREATING SURFACES OF WAFER-SHAPED ARTICLES
Granted: September 25, 2014
Application Number:
20140283994
An apparatus for liquid treatment of substrates, comprises a substrate holder and a liquid collector surrounding the substrate holder. The liquid collector comprises a trough for collecting liquid that has been used to treat a substrate. The trough is in fluid communication with a discharge conduit, and the liquid collector further comprising a recessed surface extending from a discharge opening in the trough to an inlet opening of the discharge conduit that is positioned lower than the…
CORROSION RESISTANT ALUMINUM COATING ON PLASMA CHAMBER COMPONENTS
Granted: September 18, 2014
Application Number:
20140272459
Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more…
MULTICHANNEL THERMOCOUPLE COMPENSATION FOR THREE DIMENSIONAL TEMPERATURE GRADIENT
Granted: September 18, 2014
Application Number:
20140269821
A method of using a thermocouple is provided. The method includes, but is not limited to, disposing at least one temperature sensor at each of two or more respective portions of an electrical connector adapted to receive thermocouple signals, measuring temperatures at the two or more portions, and calculating the temperatures at each terminal of the electrical connector based on measured temperature values of the two or more respective portions having the disposed temperature sensors.…
Dual Control Modes
Granted: September 18, 2014
Application Number:
20140265852
Systems and methods for using variables based on a state associated with a plasma system. A method includes determining whether the state associated with the plasma system is a first state or a second state and determining a first variable upon determining that the state is the first state. The first variable is determined based on a measurement at a communication medium. The method further includes determining a second variable upon determining that the state is the second state. The…
METHODS OF FAULT DETECTION FOR MULTIPLEXED HEATER ARRAY
Granted: September 18, 2014
Application Number:
20140263274
Described herein is a method of detecting fault conditions in a multiplexed multi-heater-zone heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus.
TUNING SYSTEM AND METHOD FOR PLASMA-BASED SUBSTRATE PROCESSING SYSTEMS
Granted: September 18, 2014
Application Number:
20140263179
A system includes a tuning element comprising a shaft and a tuning stub. The tuning stub includes a surface with a center point. The shaft is connected to the surface of the tuning stub at a location that is offset from the center point. A waveguide includes an opening into an inner portion of the waveguide. The shaft passes through the opening and the tuning stub is arranged in the inner portion of the waveguide. A first actuator selectively rotates the shaft.
System and Method for Heating Plasma Exposed Surfaces
Granted: September 18, 2014
Application Number:
20140263177
A substrate support apparatus for a plasma processing system includes a layer of dielectric material having a top surface and a bottom surface. The top surface is defined to support a substrate in exposure to a plasma. The substrate support apparatus also includes a number of optical fibers each having a first end and a second end. The first end of each optical fiber is defined to receive photons from a photon source. The second end of each optical fiber is oriented to project photons…
PORTABLE SONIC PARTICLE REMOVAL TOOL WITH A CHEMICALLY CONTROLLED WORKING FLUID
Granted: September 18, 2014
Application Number:
20140261575
A particle removal tool having a sound field transducer, a cleaning chamber, and an open sealing face. The cleaning chamber having a cleaning fluid guiding chamber extending from the sound field transducer to the open sealing face, a cleaning fluid delivery channel in fluid communication with the cleaning fluid guiding chamber, and a cleaning fluid return channel. The open sealing face has a cleaning portal disposed contiguous with a plane formed by the open sealing face and a…
Standing Wave Generation in Holes to Enhance Cleaning in the Holes in Liquid Sonification Cleaning Systems
Granted: September 18, 2014
Application Number:
20140261535
Methods and liquid sonification systems configured to clean at least one hole of an article. The methods comprise establishing at least one pressure gradient within the at least one hole to move particles proximate to a node of a standing wave toward an antinode of the standing wave, the standing wave having an axis of propagation parallel to the central axis of the at least one hole. The methods may, in some embodiments, comprise establishing one or more sites of cavitation within the…
Methods for Confinement of Foam Delivered by a Proximity Head
Granted: September 11, 2014
Application Number:
20140251382
A method suctions liquid from an upper surface of a substrate as the substrate is transported by a carrier under a head in a chamber. This operation is performed by the first section of the head. The method causes a first film of cleaning foam to flow onto the upper surface of the substrate as the substrate proceeds under the head. This operation is performed by a second section which is contiguous to the first section in the head. The method causes a second film of rinsing fluid to flow…
Radiofrequency Adjustment for Instability Management in Semiconductor Processing
Granted: September 11, 2014
Application Number:
20140256066
Methods, systems, and computer programs are presented for reducing chamber instability while processing a semiconductor substrate. One method includes an operation for identifying a first recipe with steps having an operating frequency equal to the nominal frequency of a radiofrequency (RF) power supply. Each step is analyzed with the nominal frequency, and the analysis determines if any step produces instability at the nominal frequency. The operating frequency is adjusted, for one or…
