CONFORMAL SIDEWALL PASSIVATION
Granted: February 5, 2015
Application Number:
20150037979
A method for etching features into an etch layer in a stack disposed below a patterned mask with mask features is provided. Coating providing molecules are provided. The coating providing molecules are pyrolyzed, which only produces a first set of byproducts and a second set of byproducts, wherein the first set of byproducts have a sticking coefficient between 10?6 to 5×10?3 and wherein the second set of byproducts includes all remaining byproducts from the pyrolysis wherein all…
Etch Rate Modeling and Use Thereof with Multiple Parameters for In-Chamber and Chamber-to-Chamber Matching
Granted: January 29, 2015
Application Number:
20150032245
A method includes receiving a voltage and current measured at an output of an RF generator of a first plasma system and calculating a first model etch rate based on the voltage and current, and a power. The method further includes receiving a voltage and current measured at an output of the RF generator of a second plasma system, determining a second model etch rate based on the voltage and current at the output of the RF generator of the second plasma system, and comparing the second…
ADAPTIVE DECODING OF A VIDEO FRAME IN ACCORDANCE WITH INITIATION OF NON-SEQUENTIAL PLAYBACK OF VIDEO DATA ASSOCIATED THEREWITH
Granted: January 29, 2015
Application Number:
20150030070
A method includes determining that a reference video frame of a predicted frame or a bi-predicted frame, corresponding to a point in time of beginning of a non-sequential playback of video data and currently being decoded, is unavailable or corrupt. The method also includes determining if a reference video frame utilized most recently with reference to the point in time to decode another video frame is available in the memory. Further, the method includes decoding the predicted frame or…
Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning
Granted: January 22, 2015
Application Number:
20150020848
A lower electrode plate receives radiofrequency power. A first upper plate is positioned parallel to and spaced apart from the lower electrode plate. A grounded second upper plate is positioned next to the first upper plate. A dielectric support provides support of a workpiece within a region between the lower electrode plate and the first upper plate. A purge gas is supplied at a central location of the first upper plate. A process gas is supplied to a periphery of the first upper…
SYSTEM, METHOD, AND COMPUTER PROGRAM PRODUCT FOR MANAGING OUT-OF-ORDER EXECUTION OF PROGRAM INSTRUCTIONS
Granted: January 22, 2015
Application Number:
20150026442
A method, system and computer program product embodied on a computer-readable medium are provided for managing the execution of out-of-order instructions. The method includes the steps of receiving a plurality of instructions and identifying a subset of instructions in the plurality of instructions to be executed out-of-order.
METHOD AND SYSTEM FOR VOICE CAPTURE USING FACE DETECTION IN NOISY ENVIRONMENTS
Granted: January 22, 2015
Application Number:
20150022636
Embodiments of the present invention are capable of determining a face direction associated with a detected subject (or multiple detected subjects) of interest within a 3D space using face detection procedures, while simultaneously avoiding the pick up of other environmental sounds. In addition, if more than one face is detected, embodiments of the present invention can automatically detect an active speaker based on the recognition of facial movements consistent with the performance of…
PIXEL SERIALIZATION TO IMPROVE CONSERVATIVE DEPTH ESTIMATION
Granted: January 22, 2015
Application Number:
20150022519
One embodiment includes determining a first z-range for a first portion of a coarse raster tile, where the first portion includes a plurality of pixels having a first set of pixel locations, retrieving from a memory a corresponding z-range related to a second set of pixel locations associated with the coarse raster tile, where the first set of pixel locations comprises a subset of the second set of pixel locations, and comparing the first z-range to the corresponding z-range to determine…
ANTENNA SYSTEM AND AN ELECTRONIC DEVICE INCLUDING THE SAME
Granted: January 22, 2015
Application Number:
20150022401
Provided is an antenna system. The antenna system, in this aspect, includes a first antenna operable to communicate at a given frequency below about 1000 MHz. The antenna system, in this aspect, further includes a second antenna of a different type associated with the first antenna and operable to communicate at the given frequency, wherein a correlation coefficient of the first and second antennas is less than about 0.5 for the given frequency. In this antenna system, the first and…
CLOSED LOOP DYNAMIC VOLTAGE AND FREQUENCY SCALING
Granted: January 22, 2015
Application Number:
20150022272
A system is based on an IC. A first component of the IC generates a signal that clocks the IC at a target operating frequency. A period corresponding to the target clock frequency exceeds a duration of a longest critical path associated with the IC. The first component and synchronous logic of the IC clocked therewith, each functions with the core supply voltage, which may be supplied to each via the same power supply rail. A second IC component detects errors that relate to an operation…
HYBRID FEATURE ETCHING AND BEVEL ETCHING SYSTEMS
Granted: January 15, 2015
Application Number:
20150013906
A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region…
TECHNIQUES FOR OPTIMIZING STENCIL BUFFERS
Granted: January 15, 2015
Application Number:
20150015595
One embodiment sets forth a method for associating each stencil value included in a stencil buffer with multiple fragments. Components within a graphics processing pipeline use a set of stencil masks to partition the bits of each stencil value. Each stencil mask selects a different subset of bits, and each fragment is strategically associated with both a stencil value and a stencil mask. Before performing stencil actions associated with a fragment, the raster operations unit performs…
REDUCING MEMORY TRAFFIC IN DRAM ECC MODE
Granted: January 8, 2015
Application Number:
20150012705
A method for managing memory traffic includes causing first data to be written to a data cache memory, where a first write request comprises a partial write and writes the first data to a first portion of the data cache memory, and further includes tracking the number of partial writes in the data cache memory. The method further includes issuing a fill request for one or more partial writes in the data cache memory if the number of partial writes in the data cache memory is greater than…
METHOD AND SYSTEM FOR CLOUD BASED VIRTUALIZED GRAPHICS PROCESSING FOR REMOTE DISPLAYS
Granted: January 8, 2015
Application Number:
20150009222
An apparatus for providing graphics processing. The apparatus includes a dual CPU socket architecture comprising a first CPU socket and a second CPU socket. The apparatus includes a plurality of GPU boards providing a plurality of GPU processors coupled to the first CPU socket and the second CPU socket, wherein each GPU board comprises two or more of the plurality of GPU processors. The apparatus includes a communication interface coupling the first CPU socket to a first subset of one or…
TSV BATH EVALUATION USING FIELD VERSUS FEATURE CONTRAST
Granted: December 18, 2014
Application Number:
20140367279
The embodiments herein relate to methods and apparatus for determining whether a particular test bath is able to successfully fill a feature on a substrate. In various cases, the substrate is a semiconductor substrate and the feature is a through-silicon-via. Generally, two experiments are used: a first experiment simulates the conditions present in a field region of the substrate during the fill process, and the second experiment simulates the conditions present in a feature on the…
TEMPERATURE CONTROLLED SUBSTRATE SUPPORT ASSEMBLY
Granted: December 4, 2014
Application Number:
20140356985
A temperature controlled substrate support assembly used for processing a substrate in a vacuum chamber of a semiconductor processing apparatus. The substrate support assembly comprises a top plate for supporting the substrate. A base plate is disposed below the top plate wherein the base plate comprises a cavity in an upper surface of the base plate. A cover plate is disposed between the top plate and the base plate. At least one thermoelectric module is in the cavity in the upper…
METHOD AND APPARATUS FOR LIQUID TREATMENT OF WAFER-SHAPED ARTICLES
Granted: November 27, 2014
Application Number:
20140349489
An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, a liquid dispenser for dispensing a treatment liquid onto a downwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and a gas dispenser for dispensing a gas within a gap defined between the downwardly-facing surface of the wafer-shaped article and an upper surface of the spin chuck.
System, Method and Apparatus for RF Power Compensation in Plasma Etch Chamber
Granted: November 27, 2014
Application Number:
20140349417
A system and method of applying power to a target plasma chamber include, characterizing a no plasma performance slope of the target plasma chamber, applying a selected plasma recipe to a first wafer in the target chamber, the selected plasma recipe includes a selected power set point value and monitoring a recipe factor value on the RF electrode. A ratio of process efficiency is generated comparing the reference chamber and the target chamber, the generating using as inputs the no…
METROLOGY METHOD FOR TRANSIENT GAS FLOW
Granted: November 20, 2014
Application Number:
20140343875
A method of calculating a transient flow rate of a flowed process gas comprises flowing process gas through a mass flow controller into a chamber of known volume and measuring successive data sample points which include pressure data, temperature data, and a time value for each successive data sample point. Groups of successive data sample points are identified wherein each group shares one or more successive data sample points with another group, and ratio values are calculated for each…
CONTROLLING TEMPERATURE OF A FARADAY SHIELD
Granted: November 20, 2014
Application Number:
20140342568
A method for controlling thermal cycling of a faraday shield in a plasma process chamber is provided. The method includes: performing a first plasma processing operation on a first wafer in the plasma process chamber; terminating the first plasma processing operation; performing a first wafer transfer operation to transfer the first wafer out of the chamber; and, during the first wafer transfer operation, applying power to a TCP coil under a plasma limiting condition.
APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES AND HEATING SYSTEM FOR USE IN SUCH APPARATUS
Granted: November 20, 2014
Application Number:
20140339215
An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. At least the transparent plate positioned between the infrared heating elements and the underside of a wafer is mounted for rotation with the spin chuck. Alternatively, the transparent plate is part of a housing that encloses the infrared…
