DEPOSITION APPARATUS AND METHOD
Granted: June 26, 2014
Application Number:
20140179097
A method for filling features in a layer over a substrate is provided. A dispersion of nanoparticles less than 5 nm is placed on the layer. The liquid is frozen by lowering a temperature of the liquid. The frozen liquid is sublimated by decreasing pressure and subsequently heating the frozen liquid, wherein the nanoparticles are not sublimated.
OXYGEN-CONTAINING CERAMIC HARD MASKS AND ASSOCIATED WET-CLEANS
Granted: June 26, 2014
Application Number:
20140175617
A method of forming an oxygen-containing ceramic hard mask film on a semiconductor substrate involves receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber and depositing forming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being etch selective to low-k dielectric and copper, resistant to plasma dry-etch and removable by wet-etch. The method may further involve removing the oxygen-containing ceramic…
PLASMA STABILIZATION METHOD AND PLASMA APPARATUS
Granted: June 26, 2014
Application Number:
20140174663
A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of plasma) can efficiently be suppressed and controlled in order to manufacture stable products. An apparatus includes a processing chamber, a surrounding member disposed so as to surround the processing chamber, an RF induction coil disposed above the top surface, a…
PLASMA PROCESSING CHAMBER FOR BEVEL EDGE PROCESSING
Granted: June 26, 2014
Application Number:
20140174661
A process chamber includes a wafer support to mount a wafer to be processed in the process chamber, with the wafer having an annular edge exclusion area. A first electrically grounded ring extends in an annular path radially outward of the edge exclusion area and is electrically isolated from the wafer support. A second electrode is configured with a center area opposite to the wafer support. A second electrically grounded ring extends in an annular path radially outward of the second…
APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES AND LIQUID CONTROL RING FOR USE IN SAME
Granted: June 26, 2014
Application Number:
20140174657
An apparatus for treating a wafer-shaped article includes a rotary chuck configured to hold a wafer-shaped article of a predetermined diameter such that a surface of the wafer-shaped article facing the rotary chuck is spaced from an upper surface of the rotary chuck. A ring is mounted on the rotary chuck, and includes a first upper surface overlapping an outer peripheral edge of a wafer-shaped article when positioned on the rotary chuck and a second upper surface positioned radially…
Method of Low-K Dielectric Film Repair
Granted: June 19, 2014
Application Number:
20140170780
Methods for repairing a carbon depleted low-k material in a low-k dielectric film layer of a semiconductor wafer include providing a proximity head with a plurality of nozzles disposed on a surface of the proximity head. A repair chemistry having a hydrocarbon group is applied to a portion of the semiconductor wafer that includes carbon depleted low-k material, through the proximity head. The application is used to deliver carbon from the repair chemistry into the carbon depleted low-k…
Computation of Statistics for Statistical Data Decimation
Granted: June 19, 2014
Application Number:
20140167613
Systems and methods for statistical data decimation are described. The method includes receiving a variable from a radio frequency (RF) system, propagating the variable through a model of the RF system, and counting an output of the model for the variable to generate a count. The method further includes determining whether the count meets a count threshold, generating a statistical value of the variable at the output of the model upon determining that the count meets the count threshold,…
ETCH PROCESS WITH PRE-ETCH TRANSIENT CONDITIONING
Granted: June 19, 2014
Application Number:
20140167228
A method for etching features with different aspect ratios in an etch layer is provided. A plurality of cycles is provided wherein each cycle comprises a pre-etch transient conditioning of the etch layer, which provides a transient condition of the etch layer, wherein the transient condition has a duration and etching the etch layer for a duration, wherein the duration of the etching with respect to the duration of the transient condition is controlled to control etch aspect ratio…
ULTRASONIC CLEANING METHOD AND APPARATUS THEREFORE
Granted: June 12, 2014
Application Number:
20140158153
Ultrasonic cleaning apparatuses and methods of cleaning substantially planar articles. An apparatus comprises (i) a substantially circular tank; (ii) a plurality of cleaning fluid inlets for delivering a cleaning fluid to the tank; (iii) an intermediate support for receiving an article to be cleaned; and (iv) an ultrasonic generator coupled to the tank for generating ultrasonic waves in the tank and cleaning fluid received therein. The apparatus is configured to remove particles from a…
METHOD AND APPARATUS FOR CLEANING A SUBSTRATE USING NON-NEWTONIAN FLUIDS
Granted: June 12, 2014
Application Number:
20140158167
A method for cleaning a substrate is provided. In this method, a flow of non-Newtonian fluid is provided where at least a portion of the flow exhibits plug flow. To remove particles from a surface of the substrate, the surface of the substrate is placed in contact with the portion of the flow that exhibits plug flow such that the portion of the flow exhibiting plug flow moves over the surface of the substrate. Additional methods and apparatuses for cleaning a substrate also are…
SHOWERHEAD ELECTRODE ASSEMBLIES FOR PLASMA PROCESSING APPARATUSES
Granted: June 5, 2014
Application Number:
20140154888
Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact regions across the backing plate; and at least one interface member separating the backing plate and the thermal control plate, or the thermal control plate and showerhead…
TUNGSTEN NUCLEATION PROCESS TO ENABLE LOW RESISTIVITY TUNGSTEN FEATURE FILL
Granted: June 5, 2014
Application Number:
20140154883
Methods for depositing low resistivity tungsten in features of substrates in semiconductor processing are disclosed herein. Methods involve using a germanium-containing reducing agent during tungsten nucleation layer deposition to achieve thin, low resistivity nucleation layers.
POWER SWITCHING SYSTEM FOR ESC WITH ARRAY OF THERMAL CONTROL ELEMENTS
Granted: June 5, 2014
Application Number:
20140154819
A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return…
WET ACTIVATION OF RUTHENIUM CONTAINING LINER/BARRIER
Granted: June 5, 2014
Application Number:
20140154406
Methods and systems are provided for preparing a ruthenium containing liner/barrier for metal deposition, and are useful in the manufacture of integrated circuits. In accordance with one embodiment, a borohydride solution having a pH greater than 12 is mixed with DI water at the place of application to form a pretreatment solution. The pretreatment solution is applied to reduce a ruthenium-containing surface of a substrate. Following reduction of the ruthenium containing surface, copper…
DUAL ARM VACUUM ROBOT
Granted: June 5, 2014
Application Number:
20140154033
A dual arm robot for a substrate processing system includes a base and a first arm having extended and retracted positions. Each of the first and second arms includes a first arm portion having one end rotatably connected to the base, a second arm portion having one end rotatably connected to another end of the first arm portion, and an end effector having one end rotatably connected to another end of the second arm portion and another end configured to support first and second…
Small Plasma Chamber Systems and Methods
Granted: June 5, 2014
Application Number:
20140151333
A plasma deposition chamber is disclosed. A substrate support for supporting a surface to be processed is in the chamber. A processing head including an array of plasma microchambers is also in the chamber. Each of the plasma microchambers includes an open side disposed over at least a first portion of the surface to be processed. The open side has an area less than an entire area of the surface to be processed. A process gas source is coupled to the chamber to provide a process gas the…
METHOD OF WET CLEANING ALUMINUM CHAMBER PARTS
Granted: June 5, 2014
Application Number:
20140150819
A method of wet cleaning an aluminum part having bare aluminum surfaces and anodized aluminum surfaces. The method includes CO2 dry ice blasting the surfaces of the aluminum part at approximately 35 to approximately 45 psi, masking the aluminum part to conceal the bare aluminum surfaces, soaking the dry ice blasted and masked aluminum part in deionized water at or above approximately 60° C., scrubbing the aluminum part with an abrasive pad and deionized water after completion of the…
APPARATUS FOR LIQUID TREATMENT OF WORK PIECES AND FLOW CONTROL SYSTEM FOR USE IN SAME
Granted: May 29, 2014
Application Number:
20140144529
A flow control system in an apparatus for treating a work piece controls a flow rate of treatment liquid dispensed from a liquid dispenser. The system includes a flow meter that measures a flow rate of liquid being supplied to the liquid dispenser, a controller that receives signals indicative of a flow rate measured by the flow meter, and a pressure regulator that regulates pressure of the liquid supply downstream of the flow meter based on control signals from the controller. At least…
ACTIVELY HEATED ALUMINUM BAFFLE COMPONENT HAVING IMPROVED PARTICLE PERFORMANCE AND METHODS OF USE AND MANUFACTURE THEREOF
Granted: May 29, 2014
Application Number:
20140148013
An actively heated aluminum baffle component such as a thermal control plate or baffle ring of a showerhead electrode assembly of a plasma processing chamber has an exposed outer aluminum oxide layer which is formed by an electropolishing procedure. The exposed outer aluminum oxide layer minimizes defects and particles generated as a result of differential thermal stresses experienced by the aluminum component and outer aluminum oxide layer during plasma processing compared to an…
METHOD AND APPARATUS FOR DYNAMIC CURRENT DISTRIBUTION CONTROL DURING ELECTROPLATING
Granted: May 29, 2014
Application Number:
20140144781
An apparatus for electroplating a layer of metal onto the surface of a wafer includes an auxiliary electrode that is configured to function both as an auxiliary cathode and an auxiliary anode during the course of electroplating. The apparatus further includes an ionic current collimator (e.g., a focus ring) configured to direct ionic current from the main anode to central portions of the wafer. The provided configuration effectively redistributes ionic current in the plating system…
