APPARATUS FOR LIQUID TREATMENT OF WORK PIECES AND FLOW CONTROL SYSTEM FOR USE IN SAME
Granted: May 29, 2014
Application Number:
20140144529
A flow control system in an apparatus for treating a work piece controls a flow rate of treatment liquid dispensed from a liquid dispenser. The system includes a flow meter that measures a flow rate of liquid being supplied to the liquid dispenser, a controller that receives signals indicative of a flow rate measured by the flow meter, and a pressure regulator that regulates pressure of the liquid supply downstream of the flow meter based on control signals from the controller. At least…
PLASMA PROCESSING SYSTEMS HAVING MULTI-LAYER SEGMENTED ELECTRODES AND METHODS THEREFOR.
Granted: May 22, 2014
Application Number:
20140139049
Methods and apparatus for plasma processing of a substrate to improve process results are proposed. The apparatus pertains to multi-layer segmented electrodes and methods to form and operate such electrodes. The multi-layer segmented electrode includes a first layer comprising a first plurality of electrode segments, whereby electrode segments of the first plurality of electrode segments spatially separated from one another along a first direction. There is also included a second layer…
APPARATUS FOR PROCESSING WAFER-SHAPED ARTICLES
Granted: May 22, 2014
Application Number:
20140137908
The harmful effects of accumulating droplets of process liquid on the outer surface of a dispense nozzle are prevented by equipping an apparatus for process wafer-shaped articles with a blow-off block that blows the droplets off the nozzle outer surface before they can coalesce and drop in an uncontrolled manner onto the work piece. The nozzle preferably has a polished and tapered outer surface to aid in blowing off any accumulated droplets of process liquid from the outer surface.
PALLADIUM PLATED ALUMINUM COMPONENT OF A PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF
Granted: May 8, 2014
Application Number:
20140127911
A palladium plated aluminum component of a semiconductor plasma processing chamber comprises a substrate including at least an aluminum or aluminum alloy surface, and a palladium plating on the aluminum or aluminum alloy surface of the substrate. The palladium plating comprises an exposed surface of the component and/or a mating surface of the component.
METHOD AND APPARATUS FOR FILLING INTERCONNECT STRUCTURES
Granted: May 8, 2014
Application Number:
20140124361
Methods, apparatus, and systems for depositing copper and other metals are provided. In some implementations, a wafer substrate is provided to an apparatus. The wafer substrate has a surface with field regions and a feature. A copper layer is plated onto the surface of the wafer substrate. The copper layer is annealed to redistribute copper from regions of the wafer substrate to the feature. Implementations of the disclosed methods, apparatus, and systems allow for void-free bottom-up…
PLASMA MONITORING PROBE ASSEMBLY AND PROCESSING CHAMBER INCORPORATING THE SAME
Granted: May 8, 2014
Application Number:
20140124138
A plasma processing chamber is provided comprising one or more process gas inlets, one or more exhaust gas outlets, plasma generating hardware configured to generate a process gas plasma in a plasma processing portion of the plasma processing chamber, a wafer processing stage positioned in the plasma processing chamber, and a plasma monitoring probe assembly. The plasma monitoring probe assembly comprises an electrically conductive probe and an insulator sleeve assembly positioned about…
SUB-SATURATED ATOMIC LAYER DEPOSITION AND CONFORMAL FILM DEPOSITION
Granted: May 1, 2014
Application Number:
20140120737
Methods and apparatus for depositing continuous thin films using plasma-activated sub-saturated atomic layer deposition are provided herein. According to various embodiments, pin-hole free continuous films may be deposited at thicknesses thinner than achievable with conventional methods. The methods and apparatus also provide high degree of thickness control, with films a per-cycle thickness tunable to as low as 0.1 ? in some embodiments. Further, the methods and apparatus may be used to…
Systems for Surface Treatment of Semiconductor Substrates using Sequential Chemical Applications
Granted: May 1, 2014
Application Number:
20140116476
Systems for removing post etch polymer residue from etched surface includes a first proximity head to introduce a first cleaning chemistry as a first meniscus to a portion of the surface of the substrate so as to cover a length that extends to at least a diameter of the substrate and a first width that is less than the diameter of the substrate. A second proximity head is configured to introduce a second cleaning chemistry as a second meniscus to the portion so as to cover the length…
ADJUSTING SUBSTRATE TEMPERATURE TO IMPROVE CD UNIFORMITY
Granted: April 24, 2014
Application Number:
20140110060
A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.
TUNGSTEN CARBIDE COATED METAL COMPONENT OF A PLASMA REACTOR CHAMBER AND METHOD OF COATING
Granted: April 24, 2014
Application Number:
20140113453
A tungsten carbide coated chamber component of semiconductor processing equipment includes a metal surface, optional intermediate nickel coating, and outer tungsten carbide coating. The component is manufactured by optionally depositing a nickel coating on a metal surface of the component and depositing a tungsten carbide coating on the metal surface or nickel coating to form an outermost surface.
DIFFERENTIAL MEASUREMENTS FOR ENDPOINT SIGNAL ENHANCEMENT
Granted: April 17, 2014
Application Number:
20140106476
A method for etching a layer is provided. A substrate is provided in a chamber. An etch plasma for etching a layer on the substrate is generated. Light from a first region of the chamber is measured to provide a first signal. Light from a second region of the chamber is measured to provide a second signal. The first signal with the second signal are compared to determine an etch endpoint.
PRESSURE CONTROLLED HEAT PIPE TEMPERATURE CONTROL PLATE
Granted: April 17, 2014
Application Number:
20140103806
A showerhead electrode assembly for a plasma processing chamber, which includes a showerhead electrode; a heater plate secured to the showerhead electrode; at least one pressure controlled heat pipe secured to an upper surface of the heater plate, the at least one pressure controlled heat pipe having a heat transfer liquid contained therein, and a pressurized gas, which produces a variable internal pressure within the at least one pressure controlled heat pipe; a top plate secured to an…
PLASMA MEDIATED ASHING PROCESSES THAT INCLUDE FORMATION OF A PROTECTIVE LAYER BEFORE AND/OR DURING THE PLASMA MEDIATED ASHING PROCESS
Granted: April 17, 2014
Application Number:
20140103010
A method for processing a substrate includes arranging a substrate including masked portions and unmasked portions in a process chamber; creating plasma in a process chamber; supplying a passivation gas mixture that includes nitrogen or carbon to create a plasma passivation gas mixture; exposing a substrate to the plasma passivation gas mixture to create a passivation layer on the unmasked portions of the substrate; supplying a stripping gas mixture that includes oxygen to the plasma to…
METHOD AND APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES
Granted: April 17, 2014
Application Number:
20140102637
In an apparatus and process for treating wafer-shaped articles, a spin chuck holds a wafer-shaped article in a predetermined orientation relative to an upper surface of the spin chuck. A heating assembly comprises a housing containing at least one infrared heating element. The heating assembly is mounted above the upper surface of the spin chuck and adjacent a wafer-shaped article when mounted on the spin chuck. The housing also contains a conduit having an inlet connected to a source of…
DELAMINATION DRYING APPARATUS AND METHOD
Granted: April 17, 2014
Application Number:
20140101964
An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees.
METHOD FOR SUPPLYING VAPORIZED PRECURSOR
Granted: April 10, 2014
Application Number:
20140096834
A method for supplying vapor to a chamber includes providing a first diverter valve that, when open, diverts vapor away from the chamber, and a second diverter valve that, when open, supplies the vapor to the chamber; supplying a carrier gas to the chamber; after supplying the carrier gas, creating plasma in the chamber while a substrate is in the chamber; opening the first diverter valve and closing the second diverter valve; supplying the vapor by vaporizing at least one liquid…
METHOD OF MAKING AN INTERCONNECT DEVICE
Granted: April 10, 2014
Application Number:
20140099789
A semiconductor system includes: providing a dielectric layer; providing a conductor in the dielectric layer, the conductor exposed at the top of the dielectric layer; capping the exposed conductor; and modifying the surface of the dielectric layer, modifying the surface of the dielectric layer, wherein modifying the surface includes cleaning conductor ions from the dielectric layer by dissolving the conductor in a low pH solution, dissolving the dielectric layer under the conductor…
APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES
Granted: April 10, 2014
Application Number:
20140097580
Apparatus for processing wafer-shaped articles comprises a chuck adapted to hold a wafer-shaped article of a predetermined diameter during a processing operation to be performed on the wafer-shaped article. The chuck comprises a chuck body having an outer surface that faces a wafer-shaped article when positioned on the chuck. The outer surface comprises a first electrically conductive material and the chuck body further comprises a first conductive pathway between the first conductive…
HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING
Granted: April 10, 2014
Application Number:
20140096909
A heating plate of a semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a first layer with an array of heater zones operable to tune a spatial temperature profile on the semiconductor substrate, and a second layer with one or more primary heaters to provide mean temperature control of the semiconductor substrate. The heating plate can be incorporated in a substrate support wherein a switching device independently supplies…
DISTRIBUTED MULTI-ZONE PLASMA SOURCE SYSTEMS, METHODS AND APPARATUS
Granted: April 10, 2014
Application Number:
20140096908
A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.
