METHODS FOR THREE-DIMENSIONAL INTEGRATED CIRCUIT THROUGH HOLE VIA GAPFILL AND OVERBURDEN REMOVAL
Granted: July 4, 2013
Application Number:
20130171820
Presented are methods and systems for fabricating three-dimensional integrated circuits having large diameter through-hole vias. One embodiment of the present invention provides a method of processing a wafer having holes for through-hole vias. The method comprises plating a gapfill metal on the wafer. The method also comprises chemically or electrochemically deplating a portion of the overburden metal. The method further comprises using chemical mechanical planarization to planarize the…
Plasma Processing Devices With Corrosion Resistant Components
Granted: June 27, 2013
Application Number:
20130160948
In one embodiment, a plasma processing device may include a plasma processing chamber, a plasma region, an energy source, and a corrosion resistant component. The plasma processing chamber can be maintained at a vacuum pressure and can confine a plasma processing gas. The energy source can transmit energy into the plasma processing chamber and transform at least a portion of the plasma processing gas into plasma within the plasma region. The corrosion resistant component can be located…
APPARATUS FOR TREATING SURFACES OF WAFER-SHAPED ARTICLES
Granted: June 27, 2013
Application Number:
20130160260
A device and method for processing wafer-shaped articles comprises a process chamber and a rotary chuck located within the process chamber. The rotary chuck is adapted to be driven without physical contact through a magnetic bearing. The rotary chuck comprises a series of gripping pins adapted to hold a wafer shaped article in a position depending downwardly from the rotary chuck. The rotary chuck further comprises a plate that rotates together with the rotary chuck. The plate is…
Semiconductor Processing System with Source for Decoupled Ion and Radical Control
Granted: June 20, 2013
Application Number:
20130157469
A top plate assembly is positioned above and spaced apart from the substrate support, such that a processing region exists between the top plate assembly and the substrate support. The top plate assembly includes a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber. Adjacently positioned ones of the central and annular-shaped plasma generation…
DEVICE FOR TREATING SURFACES OF WAFER-SHAPED ARTICLES AND GRIPPING PIN FOR USE IN THE DEVICE
Granted: June 20, 2013
Application Number:
20130154203
A device for processing wafer-shaped articles comprises a rotary chuck having a series of pins adapted to hold a wafer shaped article on the rotary chuck. Each of the pins comprises a cylindrical body and a projecting gripping portion formed integrally therewith. The cylindrical body and gripping portion are made from a ceramic material. The gripping portion comprises cylindrical surfaces having a common generatrix with surfaces of the cylindrical body.
METHOD OF MAKING DEVICE
Granted: June 20, 2013
Application Number:
20130154037
A method for forming MRAM (magnetoresistive random access memory) devices is provided. A bottom electrode assembly is formed. A magnetic junction assembly is formed, comprising, depositing a magnetic junction assembly layer over the bottom electrode assembly, forming a patterned mask over the magnetic junction assembly layer, etching the magnetic junction assembly layer to form the magnetic junction assembly with gaps, gap filling the magnetic junction assembly, and planarizing the…
SILICON ON INSULATOR ETCH
Granted: June 13, 2013
Application Number:
20130149869
A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon nitride etch gas into a plasma to etch the silicon nitride layer, and stopping the flow of the silicon nitride etch gas. The silicon layer is, comprising flowing a silicon etch gas, wherein the…
ELECTROLESS COPPER DEPOSITION
Granted: June 13, 2013
Application Number:
20130149461
A method for providing electroless plating is provided. An amorphous carbon barrier layer is formed over the low-k dielectric layer by providing a flow a deposition gas, comprising a hydrocarbon, H2, and an oxygen free diluent, forming a plasma from the deposition gas, and stopping the flow of the deposition gas. The amorphous carbon barrier layer is conditioned by providing a flow of a conditioning gas comprising H2 and a diluent, forming a plasma from the conditioning gas, which…
SYSTEM AND METHOD FOR CLEANING GAS INJECTORS
Granted: June 13, 2013
Application Number:
20130146095
An injector cleaning apparatus with a concentric dual flow introducer and a flow-dispersing injector seat along with a method of cleaning an injector. The concentric dual flow introducer has concentric cleaning fluid flowpaths configured to communicate with a central passage and a plurality of peripheral passages of a gas injector. The input-side injector engaging interface of the concentric dual flow introducer and the flow-dispersing injector seat each have a compressible sealing…
DEVICE AND METHOD FOR TREATING WAFER-SHAPED ARTICLES
Granted: May 30, 2013
Application Number:
20130134128
A method and device for processing wafer-shaped articles comprises a closed process chamber. A rotary chuck is located within the process chamber, and is adapted to hold a wafer shaped article thereon. An interior fluid distribution ring is positioned above the rotary chuck, and comprises an annular surface inclined downwardly from a radially inner edge to a radially outer edge thereof. At least one fluid distribution nozzle extends into the closed process chamber and is positioned so as…
DEVICE AND METHOD FOR PROCESSING WAFER SHAPED ARTICLES
Granted: May 23, 2013
Application Number:
20130125379
A device for processing wafer-shaped articles, comprises a chuck adapted to receive a wafer shaped article, and a collector surrounding the chuck. The collector comprises a base and a plurality of divider walls, as well as a plurality of nested partitions surrounding the chuck. Each of the plurality of nested partitions is positioned on a corresponding one of the plurality of divider walls, and each of the plurality of nested partitions is vertically movable so as to define a plurality…
Peripheral RF Feed and Symmetric RF Return for Symmetric RF Delivery
Granted: May 23, 2013
Application Number:
20130128409
Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, and a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface. A hollow RF feed is configured to deliver RF power, the hollow RF feed…
BYPASS CAPACITORS FOR HIGH VOLTAGE BIAS POWER IN THE MID FREQUENCY RF RANGE
Granted: May 23, 2013
Application Number:
20130128397
A system for decoupling arcing RF signals in a plasma chamber including a top electrode, an electrostatic chuck for supporting a semiconductor wafer, and a capacitor coupled between the at least one of a plurality of clamping electrodes in the surface of the electrostatic chuck and a baseplate of the electrostatic chuck, the capacitor having a capacitance of greater than about 19 nanofarads, the capacitor disposed within an interior volume of the electrostatic chuck. A method of…
PERIPHERAL RF FEED AND SYMMETRIC RF RETURN WITH RF STRAP INPUT
Granted: May 23, 2013
Application Number:
20130127124
Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed…
METHOD AND DEVICE FOR PROCESSING WAFER SHAPED ARTICLES
Granted: May 23, 2013
Application Number:
20130127102
A method and device for treating a wafer-shaped article utilizes a novel clamping mechanism, which permits wafer shift to be performed with reduced wear to the chuck pins. A wafer is rotated on a spin chuck that has a plurality of pins positioned at a periphery of the wafer shaped article. The pins each have a head portion which, in a service position, extends radially inwardly of and above the wafer. Gas is supplied onto a surface of the wafer facing the spin chuck at a flow rate…
TEMPERATURE CONTROL MODULES FOR SHOWERHEAD ELECTRODE ASSEMBLIES FOR PLASMA PROCESSING APPARATUSES
Granted: May 23, 2013
Application Number:
20130126518
A temperature control module for a showerhead electrode assembly for a semiconductor material plasma processing chamber includes a heater plate adapted to be secured to a top surface of a top electrode of the showerhead electrode assembly, and which supplies heat to the top electrode to control the temperature of the top electrode; a cooling plate adapted to be secured to and thermally isolated from a surface of a top plate of the showerhead electrode assembly, and to cool the heater…
SYSTEMS AND METHODS FOR CONTROLLING A PLASMA EDGE REGION
Granted: May 23, 2013
Application Number:
20130126513
Systems and methods for controlling a plasma edge region are described. One of the systems includes a top electrode and a bottom electrode. The system also includes an upper electrode extension and a lower electrode extension. At least a portion of the plasma edge region is formed between the upper electrode extension and the lower electrode extension. The system includes a circuit to control a radio frequency signal at the upper electrode extension.
DUAL ZONE TEMPERATURE CONTROL OF UPPER ELECTRODES
Granted: May 23, 2013
Application Number:
20130126476
A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.
TRIODE REACTOR DESIGN WITH MULTIPLE RADIOFREQUENCY POWERS
Granted: May 23, 2013
Application Number:
20130126475
Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the…
Plasma Processing Assemblies Including Hinge Assemblies
Granted: May 23, 2013
Application Number:
20130126092
In one embodiment, a plasma processing assembly may include an upper process body coupled to a hinge body and a lower process body coupled to a base hinge member. The hinge body can be pivotally engaged with the base hinge member. A self locking latch can be pivotally engaged with the base hinge member. When the hinge body is rotated around the first axis of rotation, the protruding latch engagement member can contact the self locking latch and can rotate the self locking latch around…
