METHOD AND APPARATUS FOR FORMING FEATURES WITH PLASMA PRE-ETCH TREATMENT ON PHOTORESIST
Granted: October 10, 2013
Application Number:
20130267097
A method for forming features through a photoresist mask into an underlying layer is provided. The photoresist mask has patterned mask features. The photoresist mask has patterned mask features. A treatment gas containing H2 and N2 is provided. A plasma is generated from the treatment gas, and the photoresist mask is exposed to the plasma. The treatment gas is stopped, and then the features are etched into the underlying layer through the plasma-treated photoresist mask.
APPARATUS AND METHOD FOR LIQUID TREATMENT OF WAFER-SHAPED ARTICLES
Granted: October 3, 2013
Application Number:
20130260569
An apparatus and method for liquid treatment of wafer-shaped articles comprises a process unit comprising a chuck for holding a wafer-shaped article in a predetermined orientation, and a liquid recovery system that receives used process liquid recovered from the process unit. The liquid recovery system supplies process liquid to a dispenser in the process unit. A supply of fresh process liquid supplies fresh process liquid to the liquid recovery system and also supplies fresh process…
MULTI-RADIOFREQUENCY IMPEDANCE CONTROL FOR PLASMA UNIFORMITY TUNING
Granted: October 3, 2013
Application Number:
20130260567
Circuits, methods, chambers, systems, and computer programs are presented for processing wafers. A wafer processing apparatus includes top and bottom electrodes inside a processing chamber; a first, second, third, and fourth radio frequency (RF) power sources; and one or more resonant circuits. The first, second, and third RF power sources are coupled to the bottom electrode. The top electrode may be coupled to the fourth RF power source, to electrical ground, or to the one or more…
SUBSTANTIALLY NON-OXIDIZING PLASMA TREATMENT DEVICES AND PROCESSES
Granted: September 26, 2013
Application Number:
20130248113
Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper…
COMPOSITE SHOWERHEAD ELECTRODE ASSEMBLY FOR A PLASMA PROCESSING APPARATUS
Granted: September 19, 2013
Application Number:
20130244441
A method of forming an elastomeric sheet adhesive bond between mating surfaces of an electrode and a backing member to accommodate stresses generated during temperature cycling due to mismatch in coefficients of thermal expansion. The elastomeric sheet comprises a thermally conductive silicone adhesive able to withstand a high shear strain of ?300% in a temperature range of room temperature to 300° C. such as heat curable high molecular weight dimethyl silicone with fillers.…
CHAMBER FILLER KIT FOR PLASMA ETCH CHAMBER USEFUL FOR FAST GAS SWITCHING
Granted: September 19, 2013
Application Number:
20130244440
A chamber filler kit for an inductively coupled plasma processing chamber in which semiconductor substrates are processed by inductively coupling RF energy through a window facing a substrate supported on a cantilever chuck. The kit includes at least one chamber filler which reduces the lower chamber volume in the chamber below the chuck. The fillers of the kit can be mounted in a standard chamber having a chamber volume of over 60 liters and by using different sized chamber fillers it…
ELECTROLESS GAP FILL
Granted: September 19, 2013
Application Number:
20130244423
A method for providing copper filled features is provided. Features are provided in a layer on a substrate. A simultaneous electroless copper plating and anneal is provided. The electroless copper plating is chemical-mechanical polished, where there is no annealing before the chemical-mechanical polishing and after the simultaneous electroless copper plating and anneal.
Electrode for Use in Measuring Dielectric Properties of Parts
Granted: September 19, 2013
Application Number:
20130241581
A plate of substantially uniform thickness is formed from an electrically conductive material. The plate has a top surface defined to support a part to be measured. The plate has a bottom surface defined to be connected to a radiofrequency (RF) transmission rod such that RF power can be transmitted through the RF transmission rod to the plate. The plate is defined to have a number of holes cut vertically through the plate at a corresponding number of locations that underlie embedded…
ELECTROLESS COPPER ALLOY CAPPING
Granted: September 19, 2013
Application Number:
20130240484
A method for providing copper filled features in a layer is provided. A deposition of copper is provided to fill features in the layer. Tops of the copper deposit are cleaned to remove copper or copper oxide at tops of the copper deposit. A selective copper alloy plating on the tops of the copper deposit is provided. The copper deposit and selective copper alloy plating are annealed.
Method and Apparatus for Chuck Thermal Calibration
Granted: September 12, 2013
Application Number:
20130235506
A chuck includes a first material layer having an upper surface upon which a wafer is supported. The upper surface includes portions that physically contact the wafer and portions that form gaps between the upper surface and the wafer. The chuck also includes a second material layer defined to support the first material layer. The second material layer is formed of a thermally conductive material and includes a first number of channels. The chuck also includes a second number of channels…
PLASMA PROCESSING CHAMBER FOR BEVEL EDGE PROCESSING
Granted: September 12, 2013
Application Number:
20130233490
A process chamber includes a wafer support to mount a wafer to be processed in the process chamber, with the wafer having an annular edge exclusion area. A first electrically grounded ring extends in an annular path radially outward of the edge exclusion area and is electrically isolated from the wafer support. A second electrode is configured with a center area opposite to the wafer support. A second electrically grounded ring extends in an annular path radially outward of the second…
PROCESS AND APPARATUS FOR TREATING SURFACES OF WAFER-SHAPED ARTICLES
Granted: September 12, 2013
Application Number:
20130233356
An apparatus and method for processing wafer-shaped articles comprises an array of nozzles that are stationary in use, and are individually controlled to simulate the action of a moving boom arm without the actual need for such an arm. Preferably three such arrays are provided, for dispensing three different types of liquid at various process stages. The computer control of the nozzle valves may cause only one nozzle of each array to be open at any given time, or may cause a pair of…
Impedance-Based Adjustment of Power and Frequency
Granted: August 22, 2013
Application Number:
20130214683
Systems and methods for impedance-based adjustment of power and frequency are described. A system includes a plasma chamber for containing plasma. The plasma chamber includes an electrode. The system includes a driver and amplifier coupled to the plasma chamber for providing a radio frequency (RF) signal to the electrode. The driver and amplifier is coupled to the plasma chamber via a transmission line. The system further includes a selector coupled to the driver and amplifier, a first…
STATE-BASED ADJUSTMENT OF POWER AND FREQUENCY
Granted: August 22, 2013
Application Number:
20130213573
Systems and methods for state-based adjustment of power and frequency are described. A primary generator of a system includes a primary power supply for supplying a primary radio frequency (RF) signal to an electrode. The primary generator further includes an automatic frequency control (AFC) to provide a first frequency input to the primary power supply when a pulsed signal is in a first state. A secondary generator of the system includes a secondary power supply for supplying a…
PRESSURE CONTROL VALVE ASSEMBLY OF PLASMA PROCESSING CHAMBER AND RAPID ALTERNATING PROCESS
Granted: August 8, 2013
Application Number:
20130203259
A pressure control valve assembly of a plasma processing chamber in which semiconductor substrates are processed includes a housing having an inlet, an outlet and a conduit extending between the inlet and the outlet, the inlet adapted to be connected to an interior of the plasma processing chamber and the outlet adapted to be connected to a vacuum pump which maintains the plasma processing chamber at desired pressure set points during rapid alternating phases of processing a…
CONTROLLED GAS MIXING FOR SMOOTH SIDEWALL RAPID ALTERNATING ETCH PROCESS
Granted: August 8, 2013
Application Number:
20130203256
A method for etching features in a silicon layer disposed below a mask in a plasma processing chamber a plurality of cycles is provided. A deposition phase forming a deposition on the silicon layer in the plasma processing chamber is provided comprising providing a deposition gas into the plasma processing chamber wherein the deposition gas comprises a halogen containing etchant component and a fluorocarbon deposition component, forming the deposition gas into a plasma, which provides a…
WAFERLESS AUTO CONDITIONING
Granted: August 8, 2013
Application Number:
20130203255
A method for reducing contamination in an etch chamber is provided. A substrate with a metal containing layer is placed in the etch chamber. The metal containing layer is etched, producing nonvolatile metal residue deposits on surfaces of the etch chamber, wherein some of the metal residue of the metal residue deposits is in a first state. The substrate is removed from the etch chamber. The chamber is conditioned by converting metal residue in the first state to metal residue in a second…
ELECTROLESS COPPER DEPOSITION
Granted: August 8, 2013
Application Number:
20130203249
A method for providing metal filled features in a layer is provided. A metal seed layer is deposited on tops and bottoms of the features. Metal seed layer on tops of the features and overhangs is removed without removing metal seed layer on bottoms of features. An electroless deposition of metal is provided to fill the features, wherein the electroless deposition first deposits on the metal seed layer on bottoms of the features.
METHOD OF POLISHING A METAL SURFACE OF A BARRIER DOOR OF A GATE VALVE USED IN A SEMICONDUCTOR CLUSTER TOOL ARCHITECTURE
Granted: August 8, 2013
Application Number:
20130199705
The method of preserving the anodized finish of a barrier door of a process module includes bonding a seal to a metal surface, anodizing the metal surface, and then using a CNC machine to polish the metal surface without damaging the seal. The metal surface is polished by traversing a polishing path along the metal surface with a polishing head maintaining frictional contact with the metal surface. The integrity of the seal is preserved by bounding the polishing head to skirt the edge of…
ETCH WITH INCREASED MASK SELECTIVITY
Granted: July 18, 2013
Application Number:
20130180951
A method for etching features in an etch layer in a plasma processing chamber is provided. An etch gas is flowed into the plasma processing chamber. A top outer electrode is maintained at a temperature of at least 150° C. during the etching of the features. The etch gas is formed into a plasma, which etches the etch layer.
