METHODS FOR MAKING EUV PATTERNABLE HARD MASKS
Granted: January 14, 2021
Application Number:
20210013034
Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: mixing a vapor stream of an organometallic precursor with a vapor stream of a counter-reactant so as to form a polymerized organometallic material; and depositing the organometallic polymer-like material onto the surface of the semiconductor substrate. The mixing and depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a…
SELF-LIMITING GROWTH
Granted: December 24, 2020
Application Number:
20200402846
Provided herein are methods and apparatuses for forming metal films such as tungsten (W) and molybdenum (Mo) films on semiconductor substrates. The methods involve forming a reducing agent layer, then exposing the reducing agent layer to a metal precursor to convert the reducing agent layer to a layer of the metal. In some embodiments, the reducing agent layer is a silicon- (Si-) and boron- (B-) containing layer. The methods may involve forming the reducing agent layer at a first…
METHOD TO CREATE AIR GAPS
Granted: July 9, 2020
Application Number:
20200219758
Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO2 and SiN can be selectively etched using a plasma formed in an Hz-containing process gas. The etching creates a recessed feature in place of the tin oxide between the surrounding materials. A third material, such as SiO2 is deposited over the resulting recessed feature without fully filling the recessed feature, forming an…
TIN OXIDE THIN FILM SPACERS IN SEMICONDUCTOR DEVICE MANUFACTURING
Granted: July 9, 2020
Application Number:
20200219725
Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, thin tin oxide film is conformally deposited onto a semiconductor substrate having an exposed layer of a first material (e.g., silicon oxide or silicon nitride) and a plurality of protruding features comprising a second material (e.g., silicon or carbon). For example, 10-100 nm thick tin oxide layer can be deposited using atomic layer deposition. Next, tin oxide film is removed from…
ENHANCED AUTOMATIC WAFER CENTERING SYSTEM AND TECHNIQUES FOR SAME
Granted: May 7, 2020
Application Number:
20200144097
Systems and techniques for determining and correcting inter-wafer misalignments in a stack of wafers transported by a wafer handling robot are discussed. An enhanced automatic wafer centering system is provided that may be used to determine a smallest circle associated with the stack of wafers, which may then be used to determine whether or not the stack of wafer meets various process requirements and/or if a centering correction can be made to better align the wafers with a receiving…
METHOD OF ACHIEVING HIGH SELECTIVITY FOR HIGH ASPECT RATIO DIELECTRIC ETCH
Granted: March 19, 2020
Application Number:
20200090945
Various embodiments herein relate to methods and apparatus for etching a feature in a substrate. Often, the feature is etched in the context of forming a DRAM device. The feature is etched in dielectric material, which often includes silicon oxide. The feature is etched using chemistry that includes WF6. Although WF6 is commonly used as a deposition gas (e.g., to deposit tungsten-containing film), it can also be used during etching. Advantageously, the inclusion of WF6 in the etch…
VACUUM-INTEGRATED HARDMASK PROCESSES AND APPARATUS
Granted: March 19, 2020
Application Number:
20200089104
Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing…
ROTARY FRICTION WELDED BLANK FOR PECVD HEATED SHOWERHEAD
Granted: July 11, 2019
Application Number:
20190211451
A deposition apparatus for processing substrates includes a vacuum chamber including a processing zone in which a substrate may be processed. A showerhead assembly includes a stem, face plate and back plate wherein the stem is rotary friction welded to the back plate. A substrate pedestal assembly is configured to support a substrate on an upper surface thereof when a substrate is processed in the deposition apparatus.
Ferrite Cage RF Isolator For Power Circuitry
Granted: May 30, 2019
Application Number:
20190164729
RF isolation for power circuitry includes one or more ferrite cages surrounding a pair of coils, one coil connected to power input, and the other coil connected to a load such as a heater. The ferrite cage provides universal isolation for the coils, avoiding the necessity of specially tuned filters or more complicated coil arrangements. A pair of dielectric discs support respective coils. In one aspect, the ferrite cage is constituted by ferrite pieces which fan out from a central…
SUBSTRATE PROCESSING SYSTEM PRINTED-CIRCUIT CONTROL BOARD ASSEMBLY WITH ONE OR MORE HEATER LAYERS
Granted: May 30, 2019
Application Number:
20190166700
A substrate processing system includes a processing chamber, a pedestal arranged in the processing chamber, and an electrostatic chuck (ESC) arranged on the pedestal. The ESC contains a printed circuit board assembly (PCBA) made up of a plurality of printed circuit board layers to mount circuitry that controls operation of the ESC. One or more of the printed circuit board layers includes a heater layer having one or more metal traces, which may be copper, to cover some or all of a…
SHOWERHEAD TILT MECHANISM
Granted: May 23, 2019
Application Number:
20190153601
A showerhead tilt adjustment mechanism is provided which supports a showerhead module in a top plate of a semiconductor substrate processing apparatus, the showerhead tilt adjustment mechanism including a differential screw which provides coarse and fine adjustments to adjust gap/tilt/planarization of a faceplate of the showerhead module with respect to an upper surface of a substrate pedestal module adjacent the faceplate in the semiconductor substrate processing apparatus.
Multi-Zone Cooling Of Plasma Heated Window
Granted: May 16, 2019
Application Number:
20190148118
A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more…
MODULE INCLUDING METALLIZED CERAMIC TUBES FOR RF AND GAS DELIVERY
Granted: April 11, 2019
Application Number:
20190109008
A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made…
ELECTRO-OXIDATIVE METAL REMOVAL IN THROUGH MASK INTERCONNECT FABRICATION
Granted: January 31, 2019
Application Number:
20190035640
In one implementation a wafer processing method includes filling a plurality of through-resist recessed features with a metal, such that a ratio of fill rate of a first feature to a fill rate of a second feature is R1; followed by electrochemically removing metal such that a ratio of metal removal rate from the first feature to the metal removal rate from the second feature is greater than R1, improving the uniformity of the fill. In some embodiments the method includes contacting an…
SHOWERHEAD TILT MECHANISM
Granted: January 31, 2019
Application Number:
20190032214
A showerhead tilt adjustment mechanism is provided which supports a showerhead module in a top plate of a semiconductor substrate processing apparatus, the showerhead tilt adjustment mechanism including a differential screw which provides coarse and fine adjustments to adjust gap/tilt/planarization of a faceplate of the showerhead module with respect to an upper surface of a substrate pedestal module adjacent the faceplate in the semiconductor substrate processing apparatus.
MONOLITHIC CERAMIC GAS DISTRIBUTION PLATE
Granted: January 31, 2019
Application Number:
20190032211
A monolithic ceramic gas distribution plate for use in a process chamber wherein semiconductor substrates can be processed includes a monolithic ceramic body having an upper surface, a lower surface, and an outer cylindrical surface extending between the upper surface and the lower surface. The lower surface includes first gas outlets at uniformly spaced apart first locations and the first gas outlets are in fluid communication with first gas inlets in the upper surface by a first set of…
ELECTROSTATIC CHUCK FOR USE IN SEMICONDUCTOR PROCESSING
Granted: December 6, 2018
Application Number:
20180350649
A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made…
SUBSTRATE PEDESTAL MODULE INCLUDING METALLIZED CERAMIC TUBES FOR RF AND GAS DELIVERY
Granted: December 6, 2018
Application Number:
20180350610
A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made…
WIDE LIPSEAL FOR ELECTROPLATING
Granted: September 6, 2018
Application Number:
20180251907
A lipseal is designed for use in a lipseal assembly of an electroplating apparatus wherein a clamshell engages and supplies electrical current to a semiconductor substrate during electroplating. The lipseal includes an elastomeric body having an outer portion configured to engage a cup of the lipseal assembly and an inner portion configured to engage a peripheral region of the semiconductor substrate. The inner portion includes a protrusion having a width in a radial direction sufficient…
METHOD FOR DEPOSITING ALD FILMS USING HALIDE-BASED PRECURSORS
Granted: April 12, 2018
Application Number:
20180102245
A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such…
