RF CYCLE PURGING TO REDUCE SURFACE ROUGHNESS IN METAL OXIDE AND METAL NITRIDE FILMS
Granted: September 3, 2015
Application Number:
20150247238
Methods of reducing particles in semiconductor substrate processing are provided herein. Methods involve performing a precursor-free radio frequency cycle purge without a substrate in the process chamber by introducing a gas without a precursor into the process chamber through the showerhead and igniting a plasma one or more times after a film is deposited on the substrate by introducing a vaporized liquid precursor to the process chamber.
APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES
Granted: August 27, 2015
Application Number:
20150243543
An apparatus for processing wafer-shaped articles comprises a spin chuck adapted to hold and spin a wafer-shaped article of a predetermined diameter during a processing operation. A liquid collector surrounds the spin chuck, and comprises a first inner surface. The first inner surface comprises a first conductive material. The collector further comprises a first conductive pathway for grounding the first conductive material.
DEVICE AND METHOD FOR REMOVING LIQUID FROM A SURFACE OF A DISC-LIKE ARTICLE
Granted: August 27, 2015
Application Number:
20150243533
A device for removing liquid from a surface of a disc-like article comprises a spin chuck for holding and rotating a single disc-like article about an axis of rotation and a liquid dispenser for dispensing liquid onto the disc-like article. A first gas dispenser comprises at least one nozzle with at least one orifice for blowing gas onto the disc-like article, and a second gas dispenser comprises at least one nozzle with at least one orifice for blowing gas onto the disc-like article. A…
COMPRESSION MEMBER FOR USE IN SHOWERHEAD ELECTRODE ASSEMBLY
Granted: August 27, 2015
Application Number:
20150243487
A compression member for use in a showerhead electrode assembly of a capacitively coupled plasma chamber. The member applies a compression force to a portion of a film heater adjacent a power supply boot on an upper surface of a thermal control plate and is located between the thermal control plate and a temperature-controlled top plate. The member is composed of an electrically insulating elastomeric material which can work over a large range of compressions and temperatures.
TUNABLE RF FEED STRUCTURE FOR PLASMA PROCESSING
Granted: August 27, 2015
Application Number:
20150243483
A chamber for plasma processing semiconductor wafers is provided, comprising: a support chuck disposed in the chamber; a top electrode disposed over the support chuck and within the chamber; an RF supply rod electrically connected between an RF power source and the support chuck for providing RF power to the chamber, the RF supply rod having a corrugated surface, the corrugated surface having recessed and protruded regions that are arranged in a lengthwise repeating pattern along a…
SYSTEMS AND METHODS FOR IMPROVING WAFER ETCH NON-UNIFORMITY WHEN USING TRANSFORMER-COUPLED PLASMA
Granted: August 20, 2015
Application Number:
20150235808
A substrate processing system includes a processing chamber including a dielectric window and a pedestal for supporting a substrate during processing. A gas supply system supplies gas to the processing chamber. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A radio frequency (RF) source supplies RF signals to the coil to create RF plasma in the processing chamber. N flux attenuating portions are arranged in a spaced pattern adjacent the coil,…
SYSTEM AND METHOD FOR PERFORMING HOT WATER SEAL ON ELECTROSTATIC CHUCK
Granted: August 20, 2015
Application Number:
20150235889
A method is provided for treating a bipolar ESC having a front surface and a back surface, the front surface including an anodized layer. The method includes eliminating the anodized layer, disposing a new anodized layer onto the front surface, and treating the new anodized layer with water to seal the new anodized layer.
METHOD AND APPARATUS FOR PROCESSING WAFER-SHAPED ARTICLES
Granted: August 20, 2015
Application Number:
20150235876
A method and device for processing wafer-shaped articles includes a spin chuck for holding and rotating a wafer-shaped article about a rotation axis, and at least one dispenser for dispensing a fluid onto at least one surface of a wafer-shaped article. A collector surrounds the spin chuck for collecting process fluids, with at least two collector levels for separately collecting fluids in different collector levels. Each collector level comprises an exhaust gas collecting chamber leading…
HIGH GROWTH RATE PROCESS FOR CONFORMAL ALUMINUM NITRIDE
Granted: August 20, 2015
Application Number:
20150235835
Methods of depositing conformal aluminum nitride films on semiconductor substrates are provided. Disclosed methods involve (a) exposing a substrate to an aluminum-containing precursor, (b) purging the aluminum-containing precursor for a duration insufficient to remove substantially all of the aluminum-containing precursor in gas phase, (c) exposing the substrate to a nitrogen-containing precursor to form aluminum nitride, (d) purging the nitrogen-containing precursor, and (e) repeating…
TUNABLE MULTI-ZONE GAS INJECTION SYSTEM
Granted: August 20, 2015
Application Number:
20150235811
A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent…
ELECTROLESS DEPOSITION OF CONTINUOUS PLATINUM LAYER
Granted: August 20, 2015
Application Number:
20150232995
A method for providing an electroless plating of a platinum containing layer is provided. A Ti3+ stabilization solution is provided. A Pt4+ stabilization solution is provided. A flow from the Ti3+ stabilization solution is combined with a flow from the Pt4+ stabilization solution and water to provide a diluted mixture of the Ti3+ stabilization solution and the Pt4+ stabilization solution. A substrate is exposed to the diluted mixture of the Ti3+ stabilization solution and the Pt4+…
BALL SCREW SHOWERHEAD MODULE ADJUSTER ASSEMBLY FOR SHOWERHEAD MODULE OF SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS
Granted: August 13, 2015
Application Number:
20150225854
A semiconductor substrate processing apparatus comprises a ball screw showerhead module adjuster assembly for adjusting the planarization of a showerhead module of the apparatus. The ball screw showerhead module adjuster assembly comprises a collar supported in a stepped opening of a top plate; a bellows forms an airtight seal between the collar and an adjuster plate supported above the collar by at least three adjustable ball screws operable to adjust the planarization of the adjuster…
CALCULATING POWER INPUT TO AN ARRAY OF THERMAL CONTROL ELEMENTS TO ACHIEVE A TWO-DIMENSIONAL TEMPERATURE OUTPUT
Granted: August 6, 2015
Application Number:
20150219499
A method for calculating power input to at least one thermal control element of an electrostatic chuck includes: setting the at least one thermal control element to a first predetermined power level; measuring a first temperature of the at least one thermal control element when the at least one thermal control element is powered at the first predetermined power level; setting the at least one thermal control element to a second predetermined power level; measuring a second temperature of…
WAFER HANDLING TRACTION CONTROL SYSTEM
Granted: July 30, 2015
Application Number:
20150214091
A wafer handling traction control system is provided that is able to detect slippage of a semiconductor wafer with respect to an end effector and is able to adjust the end effector's movement in order to minimize further slippage. Upon the detection of relative motion of the semiconductor wafer with respect to the end effector past a threshold amount, the end effector's movements are adjusted to minimize slippage of the semiconductor wafer. The wafer handling traction control system may…
TOUCH AUTO-CALIBRATION OF PROCESS MODULES
Granted: July 23, 2015
Application Number:
20150202774
Methods and systems for the touch auto-calibration for robot placement of substrate in process modules are provided. Touch auto-calibration allows for the automatic calibration of robot end effector positioning with respect to an aligning base in a process module. Touch auto-calibration also allows for calibration of process modules at temperatures and pressures similar to the temperatures and pressures experienced during production. The end effector has one or more aligning surfaces…
METHOD AND APPARATUS FOR CONDITIONING PROCESS LIQUIDS
Granted: July 23, 2015
Application Number:
20150202555
An apparatus for conditioning a process liquid comprises a tank incorporating a heat transfer device for heating or cooling a process liquid in the tank. A filtration unit is mounted within the tank for filtering the process liquid in the tank. A pump is mounted adjacent the tank and in fluid communication with process liquid in the tank. The pump causes process liquid to circulate between the filtration unit and the heat transfer device.
METHOD AND APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES
Granted: July 16, 2015
Application Number:
20150200123
An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, at least one upper nozzle for dispensing a treatment fluid onto an upwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and at least one lower nozzle arm comprising a series of lower nozzles extending from a central region of the spin chuck to a peripheral region of the spin chuck. The series of nozzles comprises a…
Cable Power Loss Determination For Virtual Metrology
Granted: July 16, 2015
Application Number:
20150198639
A method for modeling cable loss is described. The method includes receiving a measurement of reverse power and forward power at a radio frequency (RF) generator. The method further includes computing theoretical power delivered to a matching network as a difference between the forward power and the reverse power and calculating a ratio of the reverse power to the forward power to generate an RF power reflection ratio. The method further includes identifying a cable power attenuation…
SHOWERHEAD ELECTRODE ASSEMBLY IN A CAPACITIVELY COUPLED PLASMA PROCESSING APPARATUS
Granted: July 9, 2015
Application Number:
20150194291
A showerhead electrode assembly for use in a capacitively coupled plasma processing apparatus comprising a heat transfer plate. The heat transfer plate having independently controllable gas volumes which may be pressurized to locally control thermal conductance between a heater member and a cooling member such that uniform temperatures may be established on a plasma exposed surface of the showerhead electrode assembly.
APPARATUS FOR TREATING SURFACES OF WAFER-SHAPED ARTICLES
Granted: July 2, 2015
Application Number:
20150187629
An apparatus for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, and is adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber. The lid comprises an annular chamber, gas inlets communicating with the annular chamber and opening on a surface of the lid facing outwardly of the closed process chamber, and gas outlets…
