ELECTROLESS DEPOSITION OF CONTINUOUS PLATINUM LAYER USING COMPLEXED Co2+ METAL ION REDUCING AGENT
Granted: October 8, 2015
Application Number:
20150284857
A solution for electroless deposition of platinum is provided. The solution comprises Co2+ ions, Pt4+ ions, and amine ligands. A ratio of Co2+ to Pt4+ ion is between 100:1 and 2:1. The solution allows for electroless deposition of platinum without requiring high temperatures and high pH. The solution allows for the deposition of a pure platinum layer.
Method of Manufacturing N-Doped Graphene and Electrical Component Using NH4F, and Graphene and Electrical Component Thereby
Granted: October 1, 2015
Application Number:
20150280011
This disclosure relates to a method of manufacturing n-doped graphene and an electrical component using ammonium fluoride (NH4F), and to graphene and an electrical component thereby. An example method of manufacturing n-doped graphene includes (a) preparing graphene and ammonium fluoride (NH4F); and (b) exposing the graphene to the ammonium fluoride (NH4F), wherein through (b), a fluorine layer is formed on part or all of upper and lower surfaces of a graphene layer, and ammonium ions…
REPLACEABLE UPPER CHAMBER PARTS OF PLASMA PROCESSING APPARATUS
Granted: October 1, 2015
Application Number:
20150279621
An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8…
SYSTEMS AND METHODS FOR BULK VAPORIZATION OF PRECURSOR
Granted: October 1, 2015
Application Number:
20150276264
A vaporization system for liquid precursor includes a bubbler portion configured to store liquid precursor and to supply carrier gas into the liquid precursor to vaporize the liquid precursor to generate vaporized precursor. A baffle portion is arranged in fluid communication with the bubbler portion and includes N heated baffles, where N is an integer greater than or equal to one. The vaporized precursor generated by the bubbler portion passes through the N heated baffles before flowing…
SYSTEMS AND METHODS FOR PRESSURE-BASED LIQUID FLOW CONTROL
Granted: October 1, 2015
Application Number:
20150275358
A liquid delivery system for a substrate processing system includes a liquid ampoule to store liquid precursor. A pressure adjusting system adjusts pressure in the liquid ampoule. A pressure sensor senses a pressure in the liquid ampoule. A capillary injector includes a capillary tube in fluid communication with an output of the liquid ampoule. A temperature control device controls a temperature of the capillary tube. A first valve has an input connected to the capillary tube. A…
TRACK AND HOLD FEEDBACK CONTROL OF PULSED RF
Granted: September 17, 2015
Application Number:
20150262704
A system and method of providing feedback control to a pulsed RF generator includes an RF generator having an RF output and a feedback input. An RF electrode is coupled to the RF output and an RF sampling circuit having a sampling input coupled to the RF electrode. The sampling circuit including a feedback signal output coupled to the feedback input of the RF generator. A method of providing feedback control to a pulse RF generator includes receiving an RF sample of an RF pulse, sampling…
SYSTEMS AND METHODS FOR COOLING AND REMOVING REACTANTS FROM A SUBSTRATE PROCESSING CHAMBER
Granted: September 17, 2015
Application Number:
20150260350
A cooling and reactant removal system includes first and second gate valves. An outlet of the first gate valve is arranged in fluid communication with the process volume of the processing chamber. A filter is arranged in fluid communication with an inlet of the first gate valve. An inlet of the second gate valve is arranged in fluid communication with the process volume of the processing chamber. A gas amplifier has a first inlet, a second inlet, an outlet and at least one Coanda…
WAFERLESS CLEAN IN DIELECTRIC ETCH PROCESS
Granted: September 10, 2015
Application Number:
20150255259
A system and method for a waferless cleaning method for a capacitive coupled plasma system. The method includes forming a protective layer on a top surface of an electrostatic chuck, volatilizing etch byproducts deposited on one or more inner surfaces of the plasma process chamber, removing volatilized etch byproducts from the plasma process chamber and removing the protective layer from the top surface of the electrostatic chuck. A capacitive coupled plasma system including a waferless…
RF CYCLE PURGING TO REDUCE SURFACE ROUGHNESS IN METAL OXIDE AND METAL NITRIDE FILMS
Granted: September 3, 2015
Application Number:
20150247238
Methods of reducing particles in semiconductor substrate processing are provided herein. Methods involve performing a precursor-free radio frequency cycle purge without a substrate in the process chamber by introducing a gas without a precursor into the process chamber through the showerhead and igniting a plasma one or more times after a film is deposited on the substrate by introducing a vaporized liquid precursor to the process chamber.
APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES
Granted: August 27, 2015
Application Number:
20150243543
An apparatus for processing wafer-shaped articles comprises a spin chuck adapted to hold and spin a wafer-shaped article of a predetermined diameter during a processing operation. A liquid collector surrounds the spin chuck, and comprises a first inner surface. The first inner surface comprises a first conductive material. The collector further comprises a first conductive pathway for grounding the first conductive material.
DEVICE AND METHOD FOR REMOVING LIQUID FROM A SURFACE OF A DISC-LIKE ARTICLE
Granted: August 27, 2015
Application Number:
20150243533
A device for removing liquid from a surface of a disc-like article comprises a spin chuck for holding and rotating a single disc-like article about an axis of rotation and a liquid dispenser for dispensing liquid onto the disc-like article. A first gas dispenser comprises at least one nozzle with at least one orifice for blowing gas onto the disc-like article, and a second gas dispenser comprises at least one nozzle with at least one orifice for blowing gas onto the disc-like article. A…
COMPRESSION MEMBER FOR USE IN SHOWERHEAD ELECTRODE ASSEMBLY
Granted: August 27, 2015
Application Number:
20150243487
A compression member for use in a showerhead electrode assembly of a capacitively coupled plasma chamber. The member applies a compression force to a portion of a film heater adjacent a power supply boot on an upper surface of a thermal control plate and is located between the thermal control plate and a temperature-controlled top plate. The member is composed of an electrically insulating elastomeric material which can work over a large range of compressions and temperatures.
TUNABLE RF FEED STRUCTURE FOR PLASMA PROCESSING
Granted: August 27, 2015
Application Number:
20150243483
A chamber for plasma processing semiconductor wafers is provided, comprising: a support chuck disposed in the chamber; a top electrode disposed over the support chuck and within the chamber; an RF supply rod electrically connected between an RF power source and the support chuck for providing RF power to the chamber, the RF supply rod having a corrugated surface, the corrugated surface having recessed and protruded regions that are arranged in a lengthwise repeating pattern along a…
SYSTEM AND METHOD FOR PERFORMING HOT WATER SEAL ON ELECTROSTATIC CHUCK
Granted: August 20, 2015
Application Number:
20150235889
A method is provided for treating a bipolar ESC having a front surface and a back surface, the front surface including an anodized layer. The method includes eliminating the anodized layer, disposing a new anodized layer onto the front surface, and treating the new anodized layer with water to seal the new anodized layer.
METHOD AND APPARATUS FOR PROCESSING WAFER-SHAPED ARTICLES
Granted: August 20, 2015
Application Number:
20150235876
A method and device for processing wafer-shaped articles includes a spin chuck for holding and rotating a wafer-shaped article about a rotation axis, and at least one dispenser for dispensing a fluid onto at least one surface of a wafer-shaped article. A collector surrounds the spin chuck for collecting process fluids, with at least two collector levels for separately collecting fluids in different collector levels. Each collector level comprises an exhaust gas collecting chamber leading…
HIGH GROWTH RATE PROCESS FOR CONFORMAL ALUMINUM NITRIDE
Granted: August 20, 2015
Application Number:
20150235835
Methods of depositing conformal aluminum nitride films on semiconductor substrates are provided. Disclosed methods involve (a) exposing a substrate to an aluminum-containing precursor, (b) purging the aluminum-containing precursor for a duration insufficient to remove substantially all of the aluminum-containing precursor in gas phase, (c) exposing the substrate to a nitrogen-containing precursor to form aluminum nitride, (d) purging the nitrogen-containing precursor, and (e) repeating…
TUNABLE MULTI-ZONE GAS INJECTION SYSTEM
Granted: August 20, 2015
Application Number:
20150235811
A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent…
SYSTEMS AND METHODS FOR IMPROVING WAFER ETCH NON-UNIFORMITY WHEN USING TRANSFORMER-COUPLED PLASMA
Granted: August 20, 2015
Application Number:
20150235808
A substrate processing system includes a processing chamber including a dielectric window and a pedestal for supporting a substrate during processing. A gas supply system supplies gas to the processing chamber. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A radio frequency (RF) source supplies RF signals to the coil to create RF plasma in the processing chamber. N flux attenuating portions are arranged in a spaced pattern adjacent the coil,…
ELECTROLESS DEPOSITION OF CONTINUOUS PLATINUM LAYER
Granted: August 20, 2015
Application Number:
20150232995
A method for providing an electroless plating of a platinum containing layer is provided. A Ti3+ stabilization solution is provided. A Pt4+ stabilization solution is provided. A flow from the Ti3+ stabilization solution is combined with a flow from the Pt4+ stabilization solution and water to provide a diluted mixture of the Ti3+ stabilization solution and the Pt4+ stabilization solution. A substrate is exposed to the diluted mixture of the Ti3+ stabilization solution and the Pt4+…
BALL SCREW SHOWERHEAD MODULE ADJUSTER ASSEMBLY FOR SHOWERHEAD MODULE OF SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS
Granted: August 13, 2015
Application Number:
20150225854
A semiconductor substrate processing apparatus comprises a ball screw showerhead module adjuster assembly for adjusting the planarization of a showerhead module of the apparatus. The ball screw showerhead module adjuster assembly comprises a collar supported in a stepped opening of a top plate; a bellows forms an airtight seal between the collar and an adjuster plate supported above the collar by at least three adjustable ball screws operable to adjust the planarization of the adjuster…
