REAL-TIME EDGE ENCROACHMENT CONTROL FOR WAFER BEVEL
Granted: November 5, 2015
Application Number:
20150318150
A plasma processing system includes a bottom electrode disposed in a chamber. A lower extended electrode is disposed around the bottom electrode. An upper ceramic plate is disposed above the bottom electrode in an opposing relationship. An upper extended electrode is disposed around the upper ceramic plate. A lower process exclusion zone (PEZ) ring is situated between the lower extended electrode and the bottom electrode. An upper PEZ ring is situated between the upper extended electrode…
GAS DISTRIBUTION SHOWERHEAD FOR INDUCTIVELY COUPLED PLASMA ETCH REACTOR
Granted: November 5, 2015
Application Number:
20150318147
A two piece ceramic showerhead includes upper and lower plates which deliver process gas to an inductively coupled plasma processing chamber. The upper plate overlies the lower plate and includes radially extending gas passages which extend inwardly from an outer periphery of the upper plate, axially extending gas passages in fluid communication with the radially extending gas passages and an annular recess forming a plenum between the upper and lower plates. The lower plate includes…
SYSTEMS AND METHODS FOR DETECTING ENDPOINT FOR THROUGH-SILICON VIA REVEAL APPLICATIONS
Granted: October 29, 2015
Application Number:
20150311129
Systems and methods for processing a semiconductor wafer includes a plasma processing chamber. The plasma processing chamber includes an exterior, an interior region with a wafer receiving mechanism and a viewport disposed on a sidewall of the plasma processing chamber providing visual access from the exterior to the wafer received on the wafer receiving mechanism. A camera is mounted to the viewport of the plasma processing chamber on the exterior and coupled to an image processor. The…
ELECTROLESS DEPOSITION OF CONTINUOUS PALLADIUM LAYER USING COMPLEXED Co2+ METAL IONS OR Ti3+ METAL IONS AS REDUCING AGENTS
Granted: October 29, 2015
Application Number:
20150307995
A solution for electroless deposition of palladium is provided. A reducing agent of Co2+ or Ti3+ ions is provided to the solution. Pd2+ ions are provided to the solution.
ELECTROLESS DEPOSITION OF CONTINUOUS NICKEL LAYER USING COMPLEXED Ti3+ METAL IONS AS REDUCING AGENTS
Granted: October 29, 2015
Application Number:
20150307994
A solution for electroless deposition of nickel is provided. A reducing agent of Ti3+ ion is provided to the solution. Ni2+ ions are provided to the solution.
ELECTROLESS DEPOSITION OF CONTINUOUS COBALT LAYER USING COMPLEXED Ti3+ METAL IONS AS REDUCING AGENTS
Granted: October 29, 2015
Application Number:
20150307993
A solution for electroless deposition of cobalt is provided. A reducing agent of Ti3+ ions is provided to the solution. Co2+ ions are provided to the solution.
METHOD AND APPARATUS FOR PREPARING A SUBSTRATE WITH A SEMI-NOBLE METAL LAYER
Granted: October 22, 2015
Application Number:
20150299886
Method and apparatus for preparing a substrate with a semi-noble metal layer are disclosed. The substrate can be pretreated so that a metal oxide surface on the semi-noble metal layer can be reduced to a modified metal surface integrated with the semi-noble metal layer. The substrate can be pretreated using a remote plasma treatment. A copper seed layer can be formed on the semi-noble metal layer using either an acidic or alkaline bath with a plating solution including either at least…
PROCESSING CHAMBER WITH FEATURES FROM SIDE WALL
Granted: October 22, 2015
Application Number:
20150303085
A processing chamber having a chamber housing with a top and sidewalls is provided. The processing chamber has a seal for connecting the sidewalls of the chamber housing to a top of a lower chamber below the processing chamber. A substrate holder is attached to the sidewalls of the chamber housing. Further, a wafer lift ring supported by a side arm extending through the sidewalls has at least three posts each having at least one finger, the top of the fingers defining a first wafer…
PRETREATMENT METHOD FOR PHOTORESIST WAFER PROCESSING
Granted: October 22, 2015
Application Number:
20150303065
Certain embodiments herein relate to methods and apparatus for processing a partially fabricated semiconductor substrate in a remote plasma environment. The methods may be performed in the context of wafer level packaging (WLP) processes. The methods may include exposing the substrate to a reducing plasma to remove photoresist scum and/or oxidation from an underlying seed layer. In some cases, photoresist scum is removed through a series of plasma treatments involving exposure to an…
USING MODELING FOR IDENTIFYING A LOCATION OF A FAULT IN AN RF TRANSMISSION SYSTEM FOR A PLASMA SYSTEM
Granted: October 22, 2015
Application Number:
20150301100
Systems and methods for identifying a location of a fault in an RF transmission system includes characterizing the RF transmission system and selecting one of the stage in the RF transmission system as an initial selected stage. An output of the initial selected stage can be measured in the characterized RF transmission system. The measured output of the initial selected stage is propagated through a baseline RF model and a point of deflection is identified in a resulting RF model of the…
CONFIGURATION INDEPENDENT GAS DELIVERY SYSTEM
Granted: October 8, 2015
Application Number:
20150287573
A gas delivery apparatus for supplying process gas to a processing chamber of a plasma processing apparatus includes a mixing manifold having a plurality of gas inlets on a surface thereof, the gas inlets being equally spaced from a center mixing point of the mixing manifold; and optionally a plurality of gas supplies in communication with the plurality of gas inlets on the surface of the mixing manifold. A method of supplying gas to a processing chamber of a plasma processing apparatus…
MONOLITHIC CERAMIC COMPONENT OF GAS DELIVERY SYSTEM AND METHOD OF MAKING AND USE THEREOF
Granted: October 8, 2015
Application Number:
20150287572
A method of making a monolithic ceramic component of a gas delivery system of a semiconductor substrate processing apparatus wherein the gas delivery system is configured to supply process gas to a gas distribution member disposed downstream thereof. The gas distribution member is configured to supply the process gas to a processing region of a vacuum chamber of the apparatus, wherein the processing region is disposed above an upper surface of a semiconductor substrate to be processed.…
ELECTROLESS DEPOSITION OF CONTINUOUS PLATINUM LAYER USING COMPLEXED Co2+ METAL ION REDUCING AGENT
Granted: October 8, 2015
Application Number:
20150284857
A solution for electroless deposition of platinum is provided. The solution comprises Co2+ ions, Pt4+ ions, and amine ligands. A ratio of Co2+ to Pt4+ ion is between 100:1 and 2:1. The solution allows for electroless deposition of platinum without requiring high temperatures and high pH. The solution allows for the deposition of a pure platinum layer.
Method of Manufacturing N-Doped Graphene and Electrical Component Using NH4F, and Graphene and Electrical Component Thereby
Granted: October 1, 2015
Application Number:
20150280011
This disclosure relates to a method of manufacturing n-doped graphene and an electrical component using ammonium fluoride (NH4F), and to graphene and an electrical component thereby. An example method of manufacturing n-doped graphene includes (a) preparing graphene and ammonium fluoride (NH4F); and (b) exposing the graphene to the ammonium fluoride (NH4F), wherein through (b), a fluorine layer is formed on part or all of upper and lower surfaces of a graphene layer, and ammonium ions…
REPLACEABLE UPPER CHAMBER PARTS OF PLASMA PROCESSING APPARATUS
Granted: October 1, 2015
Application Number:
20150279621
An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8…
SYSTEMS AND METHODS FOR BULK VAPORIZATION OF PRECURSOR
Granted: October 1, 2015
Application Number:
20150276264
A vaporization system for liquid precursor includes a bubbler portion configured to store liquid precursor and to supply carrier gas into the liquid precursor to vaporize the liquid precursor to generate vaporized precursor. A baffle portion is arranged in fluid communication with the bubbler portion and includes N heated baffles, where N is an integer greater than or equal to one. The vaporized precursor generated by the bubbler portion passes through the N heated baffles before flowing…
SYSTEMS AND METHODS FOR PRESSURE-BASED LIQUID FLOW CONTROL
Granted: October 1, 2015
Application Number:
20150275358
A liquid delivery system for a substrate processing system includes a liquid ampoule to store liquid precursor. A pressure adjusting system adjusts pressure in the liquid ampoule. A pressure sensor senses a pressure in the liquid ampoule. A capillary injector includes a capillary tube in fluid communication with an output of the liquid ampoule. A temperature control device controls a temperature of the capillary tube. A first valve has an input connected to the capillary tube. A…
TRACK AND HOLD FEEDBACK CONTROL OF PULSED RF
Granted: September 17, 2015
Application Number:
20150262704
A system and method of providing feedback control to a pulsed RF generator includes an RF generator having an RF output and a feedback input. An RF electrode is coupled to the RF output and an RF sampling circuit having a sampling input coupled to the RF electrode. The sampling circuit including a feedback signal output coupled to the feedback input of the RF generator. A method of providing feedback control to a pulse RF generator includes receiving an RF sample of an RF pulse, sampling…
SYSTEMS AND METHODS FOR COOLING AND REMOVING REACTANTS FROM A SUBSTRATE PROCESSING CHAMBER
Granted: September 17, 2015
Application Number:
20150260350
A cooling and reactant removal system includes first and second gate valves. An outlet of the first gate valve is arranged in fluid communication with the process volume of the processing chamber. A filter is arranged in fluid communication with an inlet of the first gate valve. An inlet of the second gate valve is arranged in fluid communication with the process volume of the processing chamber. A gas amplifier has a first inlet, a second inlet, an outlet and at least one Coanda…
WAFERLESS CLEAN IN DIELECTRIC ETCH PROCESS
Granted: September 10, 2015
Application Number:
20150255259
A system and method for a waferless cleaning method for a capacitive coupled plasma system. The method includes forming a protective layer on a top surface of an electrostatic chuck, volatilizing etch byproducts deposited on one or more inner surfaces of the plasma process chamber, removing volatilized etch byproducts from the plasma process chamber and removing the protective layer from the top surface of the electrostatic chuck. A capacitive coupled plasma system including a waferless…
