Dual-mode autonomous guided vehicle
Granted: May 21, 2024
Patent Number:
11989027
In some examples, a dual-mode autonomous guided vehicle (AGV) is provided for docking a module in a fabrication bay. An example AGV may comprise a chassis for supporting the module on the AGV; drive means to transport the AGV under autonomous guidance, in a module transportation mode, to a specified location within the fabrication bay; a Cartesian x-y movement table to move the module under autonomous guidance, in a module docking mode, in an x- or y-docking direction, into a specific…
Underlayer for photoresist adhesion and dose reduction
Granted: May 21, 2024
Patent Number:
11988965
This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.
Chamfer-less via integration scheme
Granted: May 21, 2024
Patent Number:
11987876
Methods and apparatuses for processing semiconductor substrates in an integration scheme to form chamferless vias are provided herein. Methods include bifurcating etching of dielectric by depositing a conformal removable sealant layer having properties for selective removal relative to dielectric material without damaging dielectric material. Some methods include forming an ashable conformal sealant layer. Methods also include forming hard masks including a Group IV metal and removing…
Zincating and doping of metal liner for liner passivation and adhesion improvement
Granted: May 14, 2024
Patent Number:
11984354
A method for forming a self-forming barrier in a feature of a substrate is provided, including the following operations: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc-containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc-containing precursor and the thermal soak of the substrate for a predefined number of cycles;…
Atomic layer etch and deposition processing systems including a lens circuit with a tele-centric lens, an optical beam folding assembly, or a polygon scanner
Granted: May 14, 2024
Patent Number:
11984330
A substrate processing system includes a processing chamber, a substrate support, a laser, and a collimating assembly. The substrate support is disposed in the processing chamber and is configured to support a substrate. The laser is configured to generate a laser beam. The collimating assembly includes lenses or mirrors arranged to direct the laser beam at the substrate to heat an exposed material of the substrate. The lenses or mirrors are configured to direct the laser beam in a…
Impedance transformation in radio-frequency-assisted plasma generation
Granted: May 14, 2024
Patent Number:
11984298
An apparatus for providing signals to a device may include one or more radio frequency signal generators, and electrically-small transmission line, which coupled signals from the one or more RF signal generators to a fabrication chamber. The apparatus may additionally include a reactive circuit to transform impedance of the electrically-small transmission line from a region of relatively high impedance-sensitivity to region of relatively low impedance-sensitivity.
Substrate support with improved process uniformity
Granted: May 14, 2024
Patent Number:
11984296
A substrate support for supporting a substrate in a substrate processing system includes a baseplate and a ceramic layer arranged above the baseplate. An outer perimeter of the ceramic layer is surrounded by an edge ring. An outer radius of the ceramic layer is greater than an inner radius of the edge ring such that an outer edge of the ceramic layer extends below the edge ring.
Void free low stress fill
Granted: May 7, 2024
Patent Number:
11978666
Provided herein are methods of depositing low stress and void free metal films in deep features and related apparatus. Embodiments of the methods include treating the sidewalls of the holes to inhibit metal deposition while leaving the feature bottom untreated. In subsequent deposition operations, metal precursor molecules diffuse to the feature bottom for deposition. The process is repeated with subsequent inhibition operations treating the remaining exposed sidewalls. By repeating…
Method of producing rinsing liquid
Granted: May 7, 2024
Patent Number:
11975992
The present application discloses a method of producing an aqueous rinsing liquid in an electrochemical cell having an anode chamber with an anode and a cathode chamber with a cathode, the anode chamber and cathode chamber being separated by a cation-selective membrane, wherein the method includes the steps of (a) feeding an aqueous anode chamber feedstock into the anode chamber (b) feeding an aqueous cathode chamber feedstock comprising at least one electrolyte through the cathode…
Atomic layer deposition on 3D NAND structures
Granted: April 30, 2024
Patent Number:
11972952
Methods and apparatuses are described that provide tungsten deposition with low roughness. In some embodiments, the methods involve co-flowing nitrogen with hydrogen during an atomic layer deposition process of depositing tungsten that uses hydrogen as a reducing agent. In some embodiments, the methods involve depositing a cap layer, such as tungsten oxide or amorphous tungsten layer, on a sidewall surface of a 3D NAND structure. The disclosed embodiments have a wide variety of…
Atomic layer deposition of metal films
Granted: April 30, 2024
Patent Number:
11970776
Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal conductor. The nucleation layer is amorphous, which templates large pure metal film grain growth and reduced resistivity. Further, certain embodiments of the methods described below convert most or all of the metal oxynitride…
Dynamic precursor dosing for atomic layer deposition
Granted: April 30, 2024
Patent Number:
11970772
Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the…
Electrostatic chuck with ceramic monolithic body
Granted: April 23, 2024
Patent Number:
11967517
An electrostatic chuck for a substrate processing system includes a monolithic body made of ceramic. A plurality of first electrodes are arranged in the monolithic body adjacent to a top surface of the monolithic body and that are configured to selectively receive a chucking signal. A gas channel is formed in the monolithic body and is configured to supply back side gas to the top surface. Coolant channels are formed in the monolithic body and are configured to receive fluid to control a…
Substrate processing system including dual ion filter for downstream plasma
Granted: April 23, 2024
Patent Number:
11967486
A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes…
Flow metrology calibration for improved processing chamber matching in substrate processing systems
Granted: April 16, 2024
Patent Number:
11959793
A method for calibrating a gas flow metrology system for a substrate processing system includes a) measuring temperature using a first temperature sensor and a reference temperature sensor over a predetermined temperature range and determining a first transfer function; b) measuring pressure using a first pressure sensor and a reference pressure sensor over a predetermined pressure range using a first calibration gas and determining a second transfer function; c) performing a first…
Fill on demand ampoule refill
Granted: April 16, 2024
Patent Number:
11959175
Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on…
Substrate processing systems including gas delivery system with reduced dead legs
Granted: April 16, 2024
Patent Number:
11959172
A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a…
Pad raising mechanism in wafer positioning pedestal for semiconductor processing
Granted: April 9, 2024
Patent Number:
11955366
An assembly used in a process chamber for depositing a film on a wafer. A pedestal assembly includes a pedestal movably mounted to a main frame. A lift pad rests upon the pedestal and moves with the pedestal assembly. A raising mechanism separates the lift pad from the pedestal, and includes a hard stop fixed to the main frame, a roller attached to the pedestal assembly, a slide moveably attached to the pedestal assembly, a lift pad bracket interconnected to the slide and a pad shaft…
Spatially tunable deposition to compensate within wafer differential bow
Granted: April 2, 2024
Patent Number:
11946142
A plasma processing chamber for depositing a film on an underside surface of a wafer, includes showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. An upper separator fin is disposed over a top surface of the showerhead pedestal and a lower separator fin is disposed under the top surface of the showerhead pedestal and aligned with the upper separator fin. The first zone is configured for depositing a first film to the underside surface of the wafer and…
Electrostatic chucks with coolant gas zones and corresponding groove and monopolar electrostatic clamping electrode patterns
Granted: March 26, 2024
Patent Number:
11942351
An electrostatic chuck for a substrate processing system is provided and includes a baseplate, an intermediate layer disposed on the baseplate, and a top plate. The top plate is bonded to the baseplate via the intermediate layer and is configured to electrostatically clamp to a substrate. The top plate includes a monopolar clamping electrode and seals. The monopolar clamping electrode includes a groove opening pattern with coolant gas groove opening sets. The seals separate coolant gas…
