Integrated tool lift
Granted: July 2, 2024
Patent Number:
12027411
Semiconductor processing tools are provided that include a support framework, semiconductor processing chambers arranged along an axis, an attachment point connected to the support framework, and a detachable hoist system. Each chamber includes a base portion fixedly mounted relative to the support framework and a removable top cover including one or more hoisting features. The detachable hoist system includes a vertical member including a top end including a complementary attachment…
Edge ring arrangement with moveable edge rings
Granted: July 2, 2024
Patent Number:
12027410
An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second…
Detecting wafer status in a wafer chuck assembly
Granted: July 2, 2024
Patent Number:
12027409
Some examples provide a vacuum wafer chuck assembly for supporting a wafer. An example chuck assembly comprises a chuck hub and a centering hub disposed within the chuck hub. Chuck arms are mounted to the chuck hub, with each chuck arm extending radially between a proximal end adjacent the chuck hub, and a distal end remote therefrom. At least one vacuum pad is provided for supporting the wafer during a wafer centering or wafer processing operation. A vacuum sensor detects a presence or…
Selective etch using a sacrificial mask
Granted: July 2, 2024
Patent Number:
12027375
A method for selectively etching a silicon oxide region with respect to a lower oxygen silicon containing region is provided. A sacrificial mask selectively deposited on the lower oxygen silicon containing region with respect to the silicon oxide region. An atomic layer etch selectively etches the silicon oxide region with respect to the sacrificial mask on the lower oxygen silicon containing region.
Determining and controlling substrate temperature during substrate processing
Granted: June 25, 2024
Patent Number:
12020960
A temperature controller for substrate processing system includes memory that stores a temperature control model that correlates a heat transfer gas pressure and a first temperature of a substrate support to a second temperature of a substrate arranged on the substrate support, a temperature calculation module configured to calculate the second temperature of the substrate using the heat transfer gas pressure, the first temperature of the substrate support, and the temperature control…
Method for etching an etch layer
Granted: June 25, 2024
Patent Number:
12020944
A method of etching features in a stack comprising a dielectric material on a substrate is provided. In a step (a) an etch plasma is generated from an etch gas, exposing the stack to the etch plasma, and partially etching features in the stack. In a step (b) after step (a) an atomic layer deposition process is provided to deposit a protective film on sidewalls. The atomic layer deposition process comprises a plurality of cycles, wherein each cycle comprises exposing the stack to a first…
Low-? ALD gap-fill methods and material
Granted: June 25, 2024
Patent Number:
12020923
Various embodiments include methods to produce low dielectric-constant (low-k) films. In one embodiment, alternating ALD cycles and dopant materials are used to generate a new family of silicon low-k materials. Specifically, these materials were developed to fill high-aspect-ratio structures with re-entrant features. However, such films are also useful in blanket applications where conformal nanolaminates are applicable. Various embodiments also disclose SiOF as well as SiOCF, SiONF,…
Method for manufacturing ScAIN target
Granted: June 25, 2024
Patent Number:
12018358
The invention relates to a method for producing a scandium aluminum nitride (ScAlN) target body for pulsed laser deposition (PLD), which includes the steps of: providing a scandium aluminum alloy body; pulverizing the scandium aluminum alloy body into scandium aluminum particles; nitridizing the scandium aluminum particles into scandium aluminium nitride particles; and hot pressing the scandium aluminum nitride particles into a scandium aluminum nitride target body.
Plasma enhanced wafer soak for thin film deposition
Granted: June 18, 2024
Patent Number:
12014921
Disclosed are apparatuses and methods for providing a substrate onto a substrate support in a processing chamber, generating an inert plasma in the processing chamber, and maintaining the inert plasma to heat the substrate to a steady state temperature, suitable for conducting plasma-enhanced chemical vapor deposition (PECVD), in less than 30 seconds from providing the substrate onto the substrate support. An apparatus may include a processing chamber, a process station that includes a…
Multi-layer feature fill
Granted: June 18, 2024
Patent Number:
12014928
Described herein are methods and apparatuses for filling semiconductor substrate structures with conductive material. The methods involve depositing multi-layer bulk metal films in structures with one or more deposition conditions changed when transitioning from layer-to-layer. The methods result in high fill quality, high throughput, low precursor consumption, and low roughness. Multi-station chambers to perform the methods are also provided.
Remote-plasma clean (RPC) directional-flow device
Granted: June 18, 2024
Patent Number:
12013682
Various embodiments include apparatuses, systems, and methods for using a remote-plasma cleaning system with a directional-flow device for concurrently cleaning multiple processing stations in a processing tool used in the semiconductor and allied fields. In one example, an apparatus used to perform a remote-plasma clean (RPC) in a multi-station process chamber is disclosed and includes an RPC directional-flow device that is to be coupled between an RPC reactor and the process chamber.…
Copper electrofill on non-copper liner layers
Granted: June 18, 2024
Patent Number:
12012667
Void-free bottom-up fill of copper in features is achieved on non-copper liner layers. A non-copper liner layer has a higher resistivity than copper. An electroplating solution for plating copper on a non-copper liner layer includes a low copper concentration, high pH, organic additives, and bromide ions as a copper complexing agent. The high pH and the bromide ions do not interfere with the activity of the organic additives. In some implementations, the concentration of copper ions is…
High step coverage tungsten deposition
Granted: June 4, 2024
Patent Number:
12002679
Methods of depositing a tungsten nucleation layers that achieve very good step coverage are provided. The methods involve a sequence of alternating pulses of a tungsten-containing precursor and a boron-containing reducing agent, while co-flowing hydrogen (H2) with the boron-containing reducing agent. The H2 flow is stopped prior to the tungsten-containing precursor flow. By co-flowing H2 with the boron-containing reducing agent but not with the tungsten-containing precursor flow, a…
Process cooling-water isolation
Granted: June 4, 2024
Patent Number:
12002658
In one embodiment, the disclosed apparatus is a process cooling-water isolation system used in a process tool. The system includes an isolation valve coupled between a water supply and an inlet of one or more components in a process-module water-cooling circuit. An open device allows cooling water to flow to the one or more components, while a close device prevents cooling water from flowing to the one or more components. At least one water-leak sensor is coupled to the close device to…
Systems and methods for compensating for RF power loss
Granted: June 4, 2024
Patent Number:
12002653
Systems and methods for compensating for radio frequency (RF) power loss are described. One of the methods includes conducting a no plasma test to determine a resistance associated with an output of an impedance matching circuit. After conducting the no plasma test, a substrate is processed in a plasma chamber. During processing of the substrate, power loss associated with the output of the impedance matching circuit is determined. The power loss is used to determine an amount of power…
Wireless electronic-control system
Granted: June 4, 2024
Patent Number:
12000887
Various embodiments include methods and apparatuses to test production tools and related electrical components therefor including individual printed-circuit boards (PCBs). In one example, a test-plug hardware-platform includes at least one input/output (I/O) connector, and a configurable control system to provide command and operational signals through the I/O connector and collect data through the I/O connector from at least one PCB under test. A wireless-mesh network within the…
Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
Granted: June 4, 2024
Patent Number:
12000047
A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing…
Modular-component system for gas delivery
Granted: May 28, 2024
Patent Number:
11996301
In one embodiment, the disclosed apparatus is at least one gas-primitive substrate for use in a gas-delivery box. Each of the at least one gas-primitive substrates has at least one location on which a gas-delivery component is to be mounted. The at least one location has at least a gas-delivery component inlet port and a gas-delivery component outlet port formed within a body of the gas-primitive substrate. At least one first pair of bore holes comprising a gas-flow path is formed on an…
RF signal parameter measurement in an integrated circuit fabrication chamber
Granted: May 28, 2024
Patent Number:
11994542
An apparatus to estimate parameters of a radio frequency (RF) signal may include a voltage sensor configured to provide an indication of a voltage of the RF signal as well as a current sensor configured to provide an indication of current conducted by the RF signal. The apparatus may additionally include an analog-to-digital conversion module coupled to an output port of the voltage sensor and the current sensor, wherein the analog-to-digital converter is configured to provide digital…
Underlayer for photoresist adhesion and dose reduction
Granted: May 21, 2024
Patent Number:
11988965
This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.
