Non-elastomeric, non-polymeric, non-metallic membrane valves for semiconductor processing equipment
Granted: October 24, 2023
Patent Number:
11796085
An apparatus may be provided that includes a substrate having one or more microfluidic valve structures. The valve structures are non-elastomeric, non-polymeric, non-metallic membrane valves for use in high-vacuum application. Such valves are functional even when the fluid-control side of the valve is exposed to a sub-atmospheric pressure field which may generally act to collapse/seal traditional elastomeric membrane valve.
Methods and apparatus for controlling plasma in a plasma processing system
Granted: October 24, 2023
Patent Number:
11798784
Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The base RF signal pulses between a high power level and a low power level. Each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, each of the non-base RF generators, responsive to a control signal, proactively…
Systems for reverse pulsing
Granted: October 24, 2023
Patent Number:
11798785
Systems and methods for reverse pulsing are described. One of the systems includes a controller, first and second source radio frequency (RF) generators, and first and second bias RF generators. The controller controls the first source RF generator to generate a first source pulsed signal, and controls the second source RF generator to generate a second source pulsed signal. The system includes a first match circuit that receives the first and second source pulsed signals and combines…
Self-aligned vertical integration of three-terminal memory devices
Granted: October 17, 2023
Patent Number:
11792987
A three-dimensional (3D) memory structure includes memory cells and a plurality of oxide layers and a plurality of word line layers. The plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction. A plurality of double channel holes extend through the plurality of oxide layers and the plurality of word line layers in the first direction. The plurality of double channel holes have a peanut-shaped cross-section in a second direction that is…
Reflectometer to monitor substrate movement
Granted: October 17, 2023
Patent Number:
11791189
Various embodiments include a reflectometer and a reflectometry system for monitoring movements of a substrate, such as a silicon wafer. In one embodiment, a reflectometry system monitors and controls conditions associated with a substrate disposed within a process chamber. The process chamber includes a substrate-holding device having an actuator mechanism to control movement of the substrate with respect to the substrate-holding device. The reflectometry system includes a light source…
Confinement ring for use in a plasma processing system
Granted: October 17, 2023
Patent Number:
11791140
An apparatus for confining plasma within a plasma processing chamber is provided. The plasma processing chamber includes a lower electrode for supporting a substrate and an upper electrode disposed over the lower electrode. The apparatus is a confinement ring that includes a lower horizontal section extending between an inner lower radius and an outer radius of the confinement ring. The lower horizontal section includes an extension section that bends vertically downward at the inner…
Tin oxide thin film spacers in semiconductor device manufacturing
Granted: October 10, 2023
Patent Number:
11784047
Thin tin oxide films can be used in semiconductor device manufacturing. In one implementation, a method of processing a semiconductor substrate includes: providing a semiconductor substrate having a plurality of protruding features residing on an etch stop layer material, and an exposed tin oxide layer in contact with both the protruding features and the etch stop layer material, where the tin oxide layer covers both sidewalls and horizontal surfaces of the protruding features; and then…
Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal
Granted: October 10, 2023
Patent Number:
11784027
An isolation system includes an input junction coupled to one or more RF power supplies via a match network for receiving radio frequency (RF) power. The isolation system further includes a plurality of channel paths connected to the input junction for distributing the RF power among the channel paths. The isolation system includes an output junction connected between each of the channel paths and to an electrode of a plasma chamber for receiving portions of the distributed RF power to…
Edge seal for lower electrode assembly
Granted: October 10, 2023
Patent Number:
11781650
An edge seal for sealing an outer surface of a lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber, the lower electrode assembly including an annular groove defined between a lower member and an upper member of the lower electrode assembly. The edge seal includes an elastomeric band configured to be arranged within the groove, the elastomeric band having an annular upper surface, an annular lower surface, an inner surface, and an outer…
Apparatus for thermal control of tubing assembly and associated methods
Granted: September 26, 2023
Patent Number:
11768011
Tubing structures are connected to each other to form a tubing assembly having one or more fluid pathways from a fluid entrance to a fluid exit. A heating device is bonded to the tubing structures along a length of the tubing assembly. The heating device has a flexibility to follow along one or more bends present along the length of the tubing assembly. The heating device includes one or more heater traces embedded within an encasing material. The encasing material is thermally…
Wafer transport assembly with integrated buffers
Granted: September 19, 2023
Patent Number:
11764086
A substrate processing system configured to process substrates includes a substrate transport assembly that encloses a controlled environment defined within a continuous transport volume and at least two process modules coupled to the substrate transport assembly. The substrate transport assembly is configured to transport substrates to and from the at least two process modules through the continuous transport volume. At least two gas boxes are configured to deliver gas mixtures to the…
Oxidation resistant protective layer in chamber conditioning
Granted: September 19, 2023
Patent Number:
11761079
In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber…
Cooling for a plasma-based reactor
Granted: June 13, 2023
Patent Number:
11676798
In one embodiment, the disclosed apparatus is a heat-pipe cooling system that includes a conical structure having an upper portion that is truncated. The conical structure is configured to be formed above a dielectric window with the conical structure being configured to condense vapor from a heat-transfer fluid placed or formed within a volume formed between the dielectric window and the conical structure. At least one cooling coil is formed on an exterior portion of the conical…
Separation of plasma suppression and wafer edge to improve edge film thickness uniformity
Granted: June 13, 2023
Patent Number:
11674226
A chamber for use in implementing a deposition process includes a pedestal for supporting a semiconductor wafer. A silicon ring is disposed over the pedestal and surrounds the semiconductor wafer. The silicon ring has a ring thickness that approximates a semiconductor wafer thickness. The silicon ring has an annular width that extends a process zone defined over the semiconductor wafer to an extended process zone that is defined over the semiconductor wafer and the silicon ring. A…
Carrier plate for use in plasma processing systems
Granted: June 6, 2023
Patent Number:
11670535
A carrier plate for receiving a wafer includes a pocket defined in a middle section on a top surface of the carrier plate and has a surface diameter. The pocket defines a substrate support region. A retaining feature of the carrier plate is defined at an outer edge of the pocket. A tapered portion of the carrier plate extends from the retaining feature to an outer diameter. The tapered portion is configured to receive a focus ring. A bottom surface of the carrier plate is configured to…
Metal-containing passivation for high aspect ratio etch
Granted: June 6, 2023
Patent Number:
11670516
Various embodiments herein relate to methods, apparatus, and systems for etching a feature in a substrate. Typically the feature is etched in a dielectric-containing stack. The etching process involves cyclically etching the feature and depositing a protective film on sidewalls of the partially etched feature. These stages are repeated until the feature reaches its final depth. The protective film may have a particular composition, for example including at least one of a tungsten…
Method of atomic layer deposition
Granted: June 6, 2023
Patent Number:
11670503
Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.
Pulsed plasma chamber in dual chamber configuration
Granted: June 6, 2023
Patent Number:
11670486
Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period…
Electrostatic chucks with coolant gas zones and corresponding groove and monopolar electrostatic clamping electrode patterns
Granted: May 30, 2023
Patent Number:
11664262
An electrostatic chuck for a substrate processing system is provided and includes a baseplate, an intermediate layer disposed on the baseplate, and a top plate. The top plate is bonded to the baseplate via the intermediate layer and is configured to electrostatically clamp to a substrate. The top plate includes a monopolar clamping electrode and seals. The monopolar clamping electrode includes a groove opening pattern with coolant gas groove opening sets. The seals separate coolant gas…
Substrate processing systems including gas delivery system with reduced dead legs
Granted: May 30, 2023
Patent Number:
11661654
A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a…
