Lam Research Patent Grants

Feature fill with nucleation inhibition

Granted: February 13, 2024
Patent Number: 11901227
Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to a direct or remote plasma. Pre-inhibition and post-inhibition treatments are used to modulate the inhibition effect, facilitating feature fill using inhibition across a…

Deposition tool and method for depositing metal oxide films on organic materials

Granted: January 30, 2024
Patent Number: 11887846
An Atomic Layer Deposition (ALD) method to deposit a metal oxide layer onto an organic photoresist on a substrate using a highly reactive organic metal precursor. The deposition method protects the organic photoresist from loss and degradation from exposure to oxygen species during subsequent ALD cycles. The organic metal precursor may be an amino type precursor or a methoxy type precursor.

Systems for cooling RF heated chamber components

Granted: January 30, 2024
Patent Number: 11887819
In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the…

Integrated wafer bow measurements

Granted: January 30, 2024
Patent Number: 11885750
In some examples, a wafer bow measurement system comprises a measurement unit including: a wafer support assembly to impart rotational movement to a measured wafer supported in the measurement unit; an optical sensor; a calibration standard to calibrate the optical sensor; a linear stage actuator to impart linear direction of movement to the optical sensor; a wafer centering sensor to determine a centering of the measured wafer supported in the measurement unit; and a wafer alignment…

Capacitance measurement without disconnecting from high power circuit

Granted: January 23, 2024
Patent Number: 11881381
A method and an apparatus of plasma-assisted semiconductor processing is provided. The method comprises: a) providing substrates at each of the multiple stations; b) distributing RF power including a first target frequency to multiple stations to thereby generate a plasma in the stations, wherein the RF power is distributed according to a RF power parameter configured to reduce station to station variations; c) tuning an impedance matching circuit for a first station included in the…

Clamshell cable guide

Granted: January 23, 2024
Patent Number: D1012041

Long-life extended temperature range embedded diode design for electrostatic chuck with multiplexed heaters array

Granted: January 9, 2024
Patent Number: 11869794
A substrate support for a plasma chamber includes a base plate arranged along a plane, a first layer of an electrically insulating material arranged on the base plate along the plane, a plurality of heating elements arranged in the first layer along the plane, and a plurality of diodes arranged in respective cavities in the first layer. The plurality of diodes are connected in series to the plurality of heating elements, respectively. Each of the plurality of diodes includes a die of a…

Selective deposition of etch-stop layer for enhanced patterning

Granted: January 9, 2024
Patent Number: 11869770
Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap…

Controlled degradation of a stimuli-responsive polymer film

Granted: January 2, 2024
Patent Number: 11862473
Removing a stimuli responsive polymer (SRP) from a substrate includes controlled degradation. In certain embodiments of the methods described herein, removing SRPs includes exposure to two reactants that react to form an acid or base that can trigger the degradation of the SRP. The exposure occurs sequentially to provide more precise top down control. In some embodiments, the methods involve diffusing a compound, or a reactant that reacts to form a compound, only to a top portion of the…

Line bending control for memory applications

Granted: January 2, 2024
Patent Number: 11864372
A method for reducing bending of word lines in a memory cell includes a) providing a substrate including a plurality of word lines arranged adjacent to one another and above a plurality of transistors; b) depositing a layer of film on the plurality of word lines using a deposition process; c) after depositing the layer of film, measuring word line bending; d) comparing the word line bending to a predetermined range; e) based on the word line bending, adjusting at least one of nucleation…

Mechanical suppression of parasitic plasma in substrate processing chamber

Granted: January 2, 2024
Patent Number: 11862435
A system includes an electrode. The electrode includes a showerhead having a first stem portion and a head portion. A plurality of dielectric layers is vertically stacked between the electrode and a first surface of a conducting structure. The plurality of dielectric layers includes M dielectric layers arranged adjacent to the head portion and P dielectric portions arranged around the first stem portion. The plurality of dielectric layers defines a first gap between the electrode and one…

MEMS-based Coriolis mass flow controller

Granted: January 2, 2024
Patent Number: 11860016
A mass flow controller assembly includes a housing defining a cavity, a plurality of internal passages, a first inlet, a first outlet, a second inlet, and a second outlet. A valve is connected to the housing, has an inlet fluidly coupled to the second outlet of the housing and an outlet fluidly coupled to the second inlet of the housing. The valve is configured to control fluid flow from the second outlet of the housing to the second inlet of the housing. A microelectromechanical (MEMS)…

Controlling plating electrolyte concentration on an electrochemical plating apparatus

Granted: January 2, 2024
Patent Number: 11859300
Methods and electroplating systems for controlling plating electrolyte concentration on an electrochemical plating apparatus for substrates are disclosed. A method involves: (a) providing an electroplating solution to an electroplating system; (b) electroplating the metal onto the substrate while the substrate is held in a cathode chamber of an electroplating cell of electroplating system; (c) supplying the make-up solution to the electroplating system via a make-up solution inlet; and…

Manifold valve for controlling multiple gases

Granted: January 2, 2024
Patent Number: 11859282
Various embodiments include an apparatus to supply gases to a tool. In various examples, the apparatus includes a point-of-use (POU) valve manifold that includes a manifold body to couple to a chamber of the tool. The manifold body has multiple gas outlet ports. A purge-gas outlet port of the manifold body is directed substantially toward the outlet ports. For each of multiple gases to be input to the POU-valve manifold, the POU-valve manifold further includes: a first valve coupled to…

Systems and methods for preventing stiction of high aspect ratio structures and/or repairing high aspect ratio structures

Granted: December 26, 2023
Patent Number: 11854792
A method for treating high aspect ratio (HAR) structures arranged on a surface of a substrate includes a) spin rinsing the surface of the substrate using a first rinsing liquid; b) spinning off the first rinsing liquid from the surface of the substrate; and c) directing a gas mixture containing hydrogen fluoride onto the surface of the substrate after the first rinsing liquid is dispensed.

Configurable distributed-interlock-system

Granted: December 26, 2023
Patent Number: 11853026
Various embodiments include methods and apparatuses to provide human safety and machine safety and operations. In one example, a distributed interlock system includes at least one master device coupled to a number of slave device. The slave devices receive signals from one or more tools and provide the signals to the master device. The master device evaluates the signals and prevents unsafe conditions prior to one or more command executions, related to the unsafe conditions, being…

PECVD deposition system for deposition on selective side of the substrate

Granted: December 26, 2023
Patent Number: 11851760
A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from…

Multi-plate electrostatic chucks with ceramic baseplates

Granted: December 19, 2023
Patent Number: 11848177
An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

Alternating etch and passivation process

Granted: December 19, 2023
Patent Number: 11848212
Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation…

Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill

Granted: December 19, 2023
Patent Number: 11848199
A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment…