Process cooling-water isolation
Granted: June 4, 2024
Patent Number:
12002658
In one embodiment, the disclosed apparatus is a process cooling-water isolation system used in a process tool. The system includes an isolation valve coupled between a water supply and an inlet of one or more components in a process-module water-cooling circuit. An open device allows cooling water to flow to the one or more components, while a close device prevents cooling water from flowing to the one or more components. At least one water-leak sensor is coupled to the close device to…
Systems and methods for compensating for RF power loss
Granted: June 4, 2024
Patent Number:
12002653
Systems and methods for compensating for radio frequency (RF) power loss are described. One of the methods includes conducting a no plasma test to determine a resistance associated with an output of an impedance matching circuit. After conducting the no plasma test, a substrate is processed in a plasma chamber. During processing of the substrate, power loss associated with the output of the impedance matching circuit is determined. The power loss is used to determine an amount of power…
Wireless electronic-control system
Granted: June 4, 2024
Patent Number:
12000887
Various embodiments include methods and apparatuses to test production tools and related electrical components therefor including individual printed-circuit boards (PCBs). In one example, a test-plug hardware-platform includes at least one input/output (I/O) connector, and a configurable control system to provide command and operational signals through the I/O connector and collect data through the I/O connector from at least one PCB under test. A wireless-mesh network within the…
Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
Granted: June 4, 2024
Patent Number:
12000047
A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing…
Modular-component system for gas delivery
Granted: May 28, 2024
Patent Number:
11996301
In one embodiment, the disclosed apparatus is at least one gas-primitive substrate for use in a gas-delivery box. Each of the at least one gas-primitive substrates has at least one location on which a gas-delivery component is to be mounted. The at least one location has at least a gas-delivery component inlet port and a gas-delivery component outlet port formed within a body of the gas-primitive substrate. At least one first pair of bore holes comprising a gas-flow path is formed on an…
RF signal parameter measurement in an integrated circuit fabrication chamber
Granted: May 28, 2024
Patent Number:
11994542
An apparatus to estimate parameters of a radio frequency (RF) signal may include a voltage sensor configured to provide an indication of a voltage of the RF signal as well as a current sensor configured to provide an indication of current conducted by the RF signal. The apparatus may additionally include an analog-to-digital conversion module coupled to an output port of the voltage sensor and the current sensor, wherein the analog-to-digital converter is configured to provide digital…
Chamfer-less via integration scheme
Granted: May 21, 2024
Patent Number:
11987876
Methods and apparatuses for processing semiconductor substrates in an integration scheme to form chamferless vias are provided herein. Methods include bifurcating etching of dielectric by depositing a conformal removable sealant layer having properties for selective removal relative to dielectric material without damaging dielectric material. Some methods include forming an ashable conformal sealant layer. Methods also include forming hard masks including a Group IV metal and removing…
Electrostatic chuck (ESC) pedestal voltage isolation
Granted: May 21, 2024
Patent Number:
11990360
Various embodiments include an apparatus to retrofit into an electrostatic chuck (ESC) of an existing plasma-based processing system. The apparatus includes a tube adapter portion having a dielectric coating formed on an inner surface of the tube adapter portion to prevent arcing between high voltage electrodes within the tube adapter portion and a main body of the tube adapter portion during an operation of the plasma-based processing system, a number of insulative tubes with the high…
Dual-mode autonomous guided vehicle
Granted: May 21, 2024
Patent Number:
11989027
In some examples, a dual-mode autonomous guided vehicle (AGV) is provided for docking a module in a fabrication bay. An example AGV may comprise a chassis for supporting the module on the AGV; drive means to transport the AGV under autonomous guidance, in a module transportation mode, to a specified location within the fabrication bay; a Cartesian x-y movement table to move the module under autonomous guidance, in a module docking mode, in an x- or y-docking direction, into a specific…
Underlayer for photoresist adhesion and dose reduction
Granted: May 21, 2024
Patent Number:
11988965
This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.
Zincating and doping of metal liner for liner passivation and adhesion improvement
Granted: May 14, 2024
Patent Number:
11984354
A method for forming a self-forming barrier in a feature of a substrate is provided, including the following operations: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc-containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc-containing precursor and the thermal soak of the substrate for a predefined number of cycles;…
Atomic layer etch and deposition processing systems including a lens circuit with a tele-centric lens, an optical beam folding assembly, or a polygon scanner
Granted: May 14, 2024
Patent Number:
11984330
A substrate processing system includes a processing chamber, a substrate support, a laser, and a collimating assembly. The substrate support is disposed in the processing chamber and is configured to support a substrate. The laser is configured to generate a laser beam. The collimating assembly includes lenses or mirrors arranged to direct the laser beam at the substrate to heat an exposed material of the substrate. The lenses or mirrors are configured to direct the laser beam in a…
Impedance transformation in radio-frequency-assisted plasma generation
Granted: May 14, 2024
Patent Number:
11984298
An apparatus for providing signals to a device may include one or more radio frequency signal generators, and electrically-small transmission line, which coupled signals from the one or more RF signal generators to a fabrication chamber. The apparatus may additionally include a reactive circuit to transform impedance of the electrically-small transmission line from a region of relatively high impedance-sensitivity to region of relatively low impedance-sensitivity.
Substrate support with improved process uniformity
Granted: May 14, 2024
Patent Number:
11984296
A substrate support for supporting a substrate in a substrate processing system includes a baseplate and a ceramic layer arranged above the baseplate. An outer perimeter of the ceramic layer is surrounded by an edge ring. An outer radius of the ceramic layer is greater than an inner radius of the edge ring such that an outer edge of the ceramic layer extends below the edge ring.
Void free low stress fill
Granted: May 7, 2024
Patent Number:
11978666
Provided herein are methods of depositing low stress and void free metal films in deep features and related apparatus. Embodiments of the methods include treating the sidewalls of the holes to inhibit metal deposition while leaving the feature bottom untreated. In subsequent deposition operations, metal precursor molecules diffuse to the feature bottom for deposition. The process is repeated with subsequent inhibition operations treating the remaining exposed sidewalls. By repeating…
Method of producing rinsing liquid
Granted: May 7, 2024
Patent Number:
11975992
The present application discloses a method of producing an aqueous rinsing liquid in an electrochemical cell having an anode chamber with an anode and a cathode chamber with a cathode, the anode chamber and cathode chamber being separated by a cation-selective membrane, wherein the method includes the steps of (a) feeding an aqueous anode chamber feedstock into the anode chamber (b) feeding an aqueous cathode chamber feedstock comprising at least one electrolyte through the cathode…
Atomic layer deposition on 3D NAND structures
Granted: April 30, 2024
Patent Number:
11972952
Methods and apparatuses are described that provide tungsten deposition with low roughness. In some embodiments, the methods involve co-flowing nitrogen with hydrogen during an atomic layer deposition process of depositing tungsten that uses hydrogen as a reducing agent. In some embodiments, the methods involve depositing a cap layer, such as tungsten oxide or amorphous tungsten layer, on a sidewall surface of a 3D NAND structure. The disclosed embodiments have a wide variety of…
Atomic layer deposition of metal films
Granted: April 30, 2024
Patent Number:
11970776
Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal conductor. The nucleation layer is amorphous, which templates large pure metal film grain growth and reduced resistivity. Further, certain embodiments of the methods described below convert most or all of the metal oxynitride…
Dynamic precursor dosing for atomic layer deposition
Granted: April 30, 2024
Patent Number:
11970772
Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the…
Substrate processing system including dual ion filter for downstream plasma
Granted: April 23, 2024
Patent Number:
11967486
A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes…
