Rapid flush purging during atomic layer deposition
Granted: August 13, 2024
Patent Number:
12060639
Provided herein are methods and related apparatus for purging processing chambers during an atomic layer deposition (ALD) process. The methods involve flowing purging gas from one or more accumulators to remove process gases from the processing chambers. Following the flowing of purging gas, additional reactants may be introduced into the processing chamber to continue an ALD cycle.
Method for conditioning a plasma processing chamber
Granted: August 13, 2024
Patent Number:
12060636
A method for conditioning a plasma processing chamber including a chuck is provided. The method comprises a plurality of cycles, wherein each cycle comprises cleaning an interior of the plasma processing chamber and the chuck and forming a silicon oxide based coating on the interior of the plasma processing chamber and the chuck. The silicon oxide based coating has a first layer and a second layer.
Showerhead for semiconductor processing
Granted: August 13, 2024
Patent Number:
D1038900
Selective silicon dioxide removal using low pressure low bias deuterium plasma
Granted: August 6, 2024
Patent Number:
12057319
A method is provided, including the following method operations: generating a deuterium plasma, the deuterium plasma including a plurality of energetic deuterium atoms; and directing one or more of the plurality of energetic deuterium atoms to a surface of a substrate, the surface of the substrate having a region of silicon dioxide, the region of silicon dioxide having an underlying silicon layer; wherein the one or more of the plurality of energetic deuterium atoms selectively etch the…
Apparatus for cleaning plasma chambers
Granted: August 6, 2024
Patent Number:
12057300
Systems and methods for cleaning a processing chamber include supplying a pre-activated cleaning gas through a collar surrounding a showerhead stem into the processing chamber to clean the processing chamber. In other embodiments, a cleaning gas is supplied to the collar, and RF power is supplied to the showerhead or to a pedestal to generate plasma in the processing chamber to clean the processing chamber. In still other embodiments, an inert gas is supplied to the collar, a…
RF power compensation to reduce deposition or etch rate changes in response to substrate bulk resistivity variations
Granted: August 6, 2024
Patent Number:
12057295
A substrate processing system includes a plasma generator configured to supply (radio frequency) RF power to an electrode arranged in a processing chamber. A sensor is configured to sense a parameter of the RF power supplied to the electrode. A controller is configured to compensate variations in a rate of a plasma process due to variations in bulk resistivity of a substrate arranged on a substrate support by causing the sensor to sense the parameter at least one of prior to plasma…
Distance measurement between gas distribution device and substrate support at high temperatures
Granted: July 30, 2024
Patent Number:
12050112
A substrate processing system includes a laser triangulation sensor configured to transmit and receive light through a window of an exterior wall of a substrate processing chamber. A controller is configured to: position the laser triangulation sensor such that the laser triangulation sensor transmits light onto a measurement feature arranged between a first surface of a substrate support and a second surface of a gas distribution device, where the second surface faces the first surface;…
Mutually induced filters
Granted: July 30, 2024
Patent Number:
12052006
A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from…
RF current measurement in semiconductor processing tool
Granted: July 30, 2024
Patent Number:
12051630
A method of plasma-assisted semiconductor processing in multiple stations in a process chamber is provided. The method comprises: a) providing substrates at each of the multiple stations; b) distributing RF power to multiple stations to thereby generate a plasma in the station, wherein the RF power is distributed according to a RF power parameter that is adjusted to reduce station to station variations; c) tuning a frequency of the RF power, wherein tuning the frequency includes: i)…
Tin oxide thin film spacers in semiconductor device manufacturing
Granted: July 30, 2024
Patent Number:
12051589
Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, formation of spacers involves deposition of a tin oxide layer on a semiconductor substrate having multiple protruding features. The deposition is performed in a deposition apparatus having a controller with program instructions configured to cause sequential contacting of the semiconductor substrate with a tin-containing precursor and an oxygen-containing precursor such as to coat the…
Dielectric gapfill using atomic layer deposition (ALD), inhibitor plasma and etching
Granted: July 30, 2024
Patent Number:
12049699
A plasma generating system generates plasma in a processing chamber. A controller is configured to: a) perform atomic layer deposition (ALD) N times to deposit film in a feature of the substrate; b) after performing a) M of the N times, supply an inhibitor plasma gas to the processing chamber and strike plasma in the processing chamber to create a passivated surface more on upper portions of the feature as compared to lower portions of the feature to inhibit the atomic layer deposition…
Systems and methods for reducing effluent build-up in a pumping exhaust system
Granted: July 30, 2024
Patent Number:
12049698
A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a first flow rate to the pumping exhaust system; performing the substrate treatment process on the substrate in the processing chamber; evacuating reactants from the processing…
Synchronization of RF generators
Granted: July 23, 2024
Patent Number:
12046450
Systems and methods for synchronization of radio frequency (RF) generators are described. One of the methods includes receiving, by a first RF generator, a first recipe set, which includes information regarding a first plurality of pulse blocks for operating the first RF generator. The method further includes receiving, by a second RF generator, a second recipe set, which includes information regarding a second plurality of pulse blocks for operating a second RF generator. Upon receiving…
Multiple-output radiofrequency matching module and associated methods
Granted: July 16, 2024
Patent Number:
12040770
A matching module includes an input terminal connected to an input node, a variable load capacitor, and a plurality of RF signal delivery branches. The input terminal is connected to receive RF signals from one or more RF generators. The load capacitor is connected between the input node and a reference ground potential. Each of the plurality of RF signal delivery branches has a respective ingress terminal connected to the input node and a respective egress terminal connected to a…
Voltage transient detector and current transient detector
Granted: July 16, 2024
Patent Number:
12040605
A voltage transient detector includes circuitry for transmitting electrical current through a light emitting diode and a fuse that is serially connected between the light emitting diode and a reference potential, such that the light emitting diode is illuminated when the fuse is not blown. The voltage transient detector also includes circuitry for transmitting a controlled amount of electrical current through the fuse in conjunction with an occurrence of a voltage transient at a voltage…
Efficient cleaning and etching of high aspect ratio structures
Granted: July 16, 2024
Patent Number:
12040193
A method for treating a substrate includes arranging a substrate in a processing chamber. At least one of a vaporized solvent and a gas mixture including the solvent is supplied to the processing chamber to form a conformal liquid layer of the solvent on exposed surfaces of the substrate. The at least one of the vaporized solvent and the gas mixture is removed from the processing chamber. A reactive gas including a halogen species is supplied to the processing chamber. The conformal…
Modulated atomic layer deposition
Granted: July 16, 2024
Patent Number:
12040181
Methods and apparatuses for depositing thin films using long and short conversion times during alternating cycles of atomic layer deposition (ALD) are provided herein. Embodiments involve alternating conversion duration of an ALD cycle in one or more cycles of a multi-cycle ALD process. Some embodiments involve modulation of dose, purge, pressure, plasma power or plasma energy in two or more ALD cycles.
Nitride films with improved etch selectivity for 3D NAND integration
Granted: July 16, 2024
Patent Number:
12040180
A method for depositing a nitride layer over an oxide layer to form an oxide-nitride stack is provided. The method includes supplying an inert gas to a plasma enhanced chemical vapor deposition (PECVD) reactor that supports a substrate having said oxide layer. Then, providing power to an electrode of the PECVD reactor, where the power is configured to strike a plasma. Then, flowing reactant gases into the PECVD reactor. The reactant gases include a first percentage by volume of ammonia…
Selective carbon deposition
Granted: July 16, 2024
Patent Number:
12037686
A method for depositing carbon on a substrate in a processing chamber includes arranging the substrate on a substrate support in the processing chamber. The substrate includes a carbon film having a first thickness formed on at least one underlying layer of the substrate. The method further includes performing a first etching step to etch the substrate to form features on the substrate, remove portions of the carbon film, and decrease the first thickness of the carbon film, selectively…
Detecting wafer status in a wafer chuck assembly
Granted: July 2, 2024
Patent Number:
12027409
Some examples provide a vacuum wafer chuck assembly for supporting a wafer. An example chuck assembly comprises a chuck hub and a centering hub disposed within the chuck hub. Chuck arms are mounted to the chuck hub, with each chuck arm extending radially between a proximal end adjacent the chuck hub, and a distal end remote therefrom. At least one vacuum pad is provided for supporting the wafer during a wafer centering or wafer processing operation. A vacuum sensor detects a presence or…
