Apparatus and method for reducing stray light in substrate processing chambers
Granted: December 28, 2004
Patent Number:
6835914
A method and apparatus for heating semiconductor wafers in thermal processing chambers. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral…
Systems and methods for remote plasma clean
Granted: December 28, 2004
Patent Number:
6835278
A remote plasma cleaning system includes a high conductance delivery line that delivers activated species from a remote plasma generator to a processing chamber. The delivery line preferably has a conductance of greater than 40 liters per second, enabling the power levels of the remote plasma generator to be maintained at less than about 3 kW. In one embodiment, activated species may be introduced into the processing chamber via one or more inlet ports disposed in a side portion of the…
Pulse precursor deposition process for forming layers in semiconductor devices
Granted: October 26, 2004
Patent Number:
6808758
A process for producing thin layers in electronic devices such as integrated circuit chips, is provided. The process includes the steps of injecting a precursor fluid into a thermal processing chamber containing a substrate, such as a semiconductor wafer. The precursor fluid is converted into a solid which forms a layer on the substrate. In accordance with the present invention, the precursor fluid is pulsed into the process chamber in a manner such that the fluid is completly exhausted…
Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
Granted: October 19, 2004
Patent Number:
6805139
Plasma systems and methods for supplying activation energy to remove cross-linked photoresist crust using ion bombardment of the substrate from a plasma, at reduced temperature, achieved in part by operating the processing chamber at low pressures. Reduced temperatures prevent “popping” of the photoresist which can cause particulate contamination. The gas flow may comprise a principal gas, an inert diluent gas, and an additive gas. Principal gases for HDIS may comprise…
Electroless plating solution and process
Granted: September 28, 2004
Patent Number:
6797312
Electroless plating solutions are disclosed for forming metal alloys, such as cobalt-tungsten alloys. In accordance with the present invention, the electroless plating solutions may be formulated so as not to contain any alkali metals. Further, the solutions can be formulated without the use of tetramethylammonium hydroxide. In a further embodiment, a plating solution can be formulated that does not require the use of a catalyst, such as a palladium catalyst prior to depositing the metal…
Pulsed plasma processing of semiconductor substrates
Granted: September 21, 2004
Patent Number:
6794301
Apparatus and methods for an improved plasma processing. A first power source alternates between high and low power cycles to produce and sustain a plasma, and a second power source alternates between high and low power cycles to accelerate ions toward the substrate being processed. Preferably, the power sources are synchronized such that the second power provides each high power cycle substantially during the time that the first power source provides each low power cycle. Commencement…
Method and system for rotating a semiconductor wafer in processing chambers
Granted: August 3, 2004
Patent Number:
6770146
The present invention is generally directed to a system and process for rotating semiconductor wafers in thermal processing chambers, such as rapid thermal processing chambers and chemical vapor deposition chambers. In accordance with the present invention, a semiconductor wafer is supported on a substrate holder which, in turn, is supported on a rotor. During processing, the rotor is magnetically levitated and magnetically rotated by suspension actuators and rotation actuators…
Heating device for heating semiconductor wafers in thermal processing chambers
Granted: August 3, 2004
Patent Number:
6771895
An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources…
Method of processing a wafer using a compliant wafer chuck
Granted: July 20, 2004
Patent Number:
6764713
A method of processing a wafer includes placing a wafer atop a wafer chuck, wherein the chuck has a base and an upper body in which the upper body is coupled to the base by a flexible coupling that allows the upper body to tilt relative to the base. The wafer is engaged to a hollow sleeve and forms a floor creating an enclosed vessel to retain a processing fluid. Once the vessel is filled, the wafer is then processed utilizing the processing fluid. Further, the wafer tilts allowing for a…
Rapid thermal processing chamber for processing multiple wafers
Granted: April 27, 2004
Patent Number:
6727474
A system for heating a plurality of semiconductor wafers at the same time is disclosed. the apparatus includes a thermal processing chamber containing a substrate holder designed to hold from about three to about ten wafers. The thermal processing chamber is surrounded by light energy sources which heat the wafers contained in the chamber. The light energy sources can heat the wafers directly or indirectly. In one embodiment, the thermal processing chamber includes a liner made from a…
Heating device for heating semiconductor wafers in thermal processing chambers
Granted: April 6, 2004
Patent Number:
6717158
An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources…
Systems and methods for enhancing plasma processing of a semiconductor substrate
Granted: March 16, 2004
Patent Number:
6706142
Inductively-coupled plasma reactors for anisotropic and isotropic etching of a substrate, as well as chemical vapor deposition of a material onto a substrate. The reactor system comprises a processing chamber with a plasma shaping member contained therein. In one embodiment, the plasma shaping member extends from a portion of the top wall of the processing chamber, downward into the chamber, and it is generally positioned above the center of the substrate. The shaping member may be a…
UV-enhanced oxy-nitridation of semiconductor substrates
Granted: March 16, 2004
Patent Number:
6706643
The oxynitride or oxide layer is formed on a semiconductor substrate by subjecting the substrate to UV radiation while exposed to a gaseous atmosphere of O2 and one or more of N2, N2O, H2 and NH3. Thereafter, a silicon nitride layer is formed according to known 4-step gate stack dielectric processing techniques. Alternatively, a 3-step gate stack process is used, namely following UV-oxidation, a further UV-radiation in NH3 may be applied, followed by a rapid thermal anneal process in an…
Rapid thermal processing system for integrated circuits
Granted: March 16, 2004
Patent Number:
6707011
In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures include associated reflectors…
Door systems for low contamination, high throughput handling of workpieces for vacuum processing
Granted: November 18, 2003
Patent Number:
6647665
A workpiece handling system with dual load locks, a transport chamber and a process chamber. Workpieces may be retrieved from one load lock for processing at vacuum pressure, while workpieces are unloaded from the other load lock at the pressure of the surrounding environment. The transport chamber has a transport robot with two arms. Processed workpieces and new workpieces may be exchanged by a simple under/over motion of the two robot arms. The transport robot rotates about a central…
Method of forming dielectric films
Granted: October 28, 2003
Patent Number:
6638876
A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. In one embodiment, the process is directed to forming a nitride layer on a substrate. In an alternative embodiment, the present invention is directed to forming a metal oxide or silicate on a semiconductor wafer. When forming a metal oxide or silicate, a passivation layer is first deposited onto the substrate.
Systems and methods for two-sided etch of a semiconductor substrate
Granted: September 23, 2003
Patent Number:
6624082
A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase…
Rapid thermal processing chamber for processing multiple wafers
Granted: August 26, 2003
Patent Number:
6610967
A system for heating a plurality of semiconductor wafers at the same time is disclosed. The apparatus includes a thermal processing chamber containing a substrate holder designed to hold from about three to about ten wafers. The thermal processing chamber is surrounded by light energy sources which heat the wafers contained in the chamber. The light energy sources can heat the wafers directly or indirectly. In one embodiment, the thermal processing chamber includes a liner made from a…
Rapid thermal processing system for integrated circuits
Granted: July 29, 2003
Patent Number:
6600138
In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded individually or in groups by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures may…
Systems and methods for low contamination, high throughput handling of workpieces for vacuum processing
Granted: May 27, 2003
Patent Number:
6568552
A workpiece handling system with dual load locks, a transport chamber and a process chamber. Workpieces may be retrieved from one load lock for processing at vacuum pressure, while workpieces are unloaded from the other load lock at the pressure of the surrounding environment. The transport chamber has a transport robot with two arms. Processed workpieces and new workpieces may be exchanged by a simple under/over motion of the two robot arms. The transport robot rotates about a central…
