Windows used in thermal processing chambers
Granted: May 6, 2003
Patent Number:
6559424
An apparatus for heat treating semiconductor wafers in a thermal processing chamber using light energy is provided. In one embodiment, the apparatus contains a window located between the semiconductor wafer and the energy source. The window contains a member that defines at least one passage capable of being placed into communication with a coolant to cool the window and at least partially offset the “first wafer effect”. Additionally, in some embodiments, the window has a…
Inductive plasma reactor
Granted: April 22, 2003
Patent Number:
6551447
A plasma reactor and methods for processing semiconductor wafers are described. Gases are introduced into a reactor chamber. An induction coil surrounds the reactor chamber. RF power is applied to the induction coil and is inductively coupled into the reactor chamber causing a plasma to form. A split Faraday shield is interposed between the induction coil and the reactor chamber to substantially block the capacitive coupling of energy into the reactor chamber which may modulate the…
Downstream surface cleaning process
Granted: March 25, 2003
Patent Number:
6536449
Systems and methods are provided for selectively removing unwanted material from a surface of a semiconductor wafer without causing damage to or etching of underlying portions of the semiconductor. One embodiment of the invention includes the use of reactive species from a plasma source to facilitate the removal of residues remaining after metal etching on a silicon wafer, where the gases employed in creating the plasma include hydrogen, halogens such as fluorine, and little or no…
Processes for treating electronic components
Granted: December 10, 2002
Patent Number:
6491763
A process for treating an electronic component wherein the electronic component is exposed to a heated solvent and subsequently exposed to an ozonated process fluid. The electronic component is optionally exposed to the heated solvent by exposing the electronic component to a passing layer of heated solvent. An apparatus for treating electronic components with a heated solvent and an ozonated process fluid is also provided.
UV pretreatment process for ultra-thin oxynitride formation
Granted: September 17, 2002
Patent Number:
6451713
The oxynitride or oxide layer formed on a semiconductor substrate is pre-treated with UV-excited gas (such as chlorine or nitrogen) to improve the layer surface condition and increase the density of nucleation sites for subsequent silicon nitride deposition. The pre-treatment is shown to reduce the root mean square surface roughness of thinner silicon nitride films (with physical thicknesses below 36 Å, or even below 20 Å that are deposited on the oxynitride layer by chemical…
Gas driven rotating susceptor for rapid thermal processing (RTP) system
Granted: September 10, 2002
Patent Number:
6449428
Air bearings support a rotating wafer carrying base in an RTP system. The base in proximity to the air bearing is protected from warping due to absorption of radiation from the hot wafer being treated. The most preferred embodiment splits the base into an inner disk carrying the wafer and an outer ring, where the inner ring which absorbs the most energy contacts and is supported at three points by the outer disk which is supported by the air bearing.
Systems and methods for epitaxial processing of a semiconductor substrate
Granted: August 20, 2002
Patent Number:
6436796
A thermal processing system and method for processing a semiconductor substrate. An inductor couples energy to a susceptor, wherein the spacing between the inductor and the susceptor is configured for the steady-state portions of a CVD epitaxial deposition process. The temperature uniformity of the susceptor is improved during the transient portions of the process, the heat ramp-up and cool down, by varying the distance of separation between the inductor and the susceptor. Temperature…
System for controlling the temperature of a reflective substrate during rapid heating
Granted: June 11, 2002
Patent Number:
6403923
A system and process is disclosed for rapidly heating semiconductor wafers coated with a highly reflective material on either the whole wafer or in a patterned area. The wafers are heated in a thermal processing chamber by a plurality of lamps. In order for the wafer coated with the highly reflective material to more rapidly increase in temperature with lower power intensity, a shield member is placed in between the wafer and the plurality of lamps. The shield member is made from a high…
System and method for thermal processing of a semiconductor substrate
Granted: June 11, 2002
Patent Number:
6403925
A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature…
System and method for thermal processing of a semiconductor substrate
Granted: June 4, 2002
Patent Number:
6399921
A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature…
Systems and methods for variable mode plasma enhanced processing of semiconductor wafers
Granted: April 30, 2002
Patent Number:
6379576
Variable mode plasma system and method for processing a semiconductor wafer. The modulation of the plasma potential relative to the semiconductor wafer is varied for different process steps. A capacitive shield may be selectively grounded to vary the level of capacitive coupling and modulation of the plasma. Process pressures, gases and power level may also be modified for different process steps. Plasma properties may easily be tailored to specific layers and materials being processed…
Method and apparatus for thermal processing of semiconductor substrates
Granted: March 12, 2002
Patent Number:
6355909
An improved apparatus and method for thermal processing of semiconductor wafers. The apparatus and method provide the temperature stability and uniformity of a conventional batch furnace as well as the processing speed and reduced time-at-temperature of a lamp-heated rapid thermal processor (RTP). Individual wafers are rapidly inserted into and withdrawn from a furnace cavity held at a nearly constant and isothermal temperature. The speeds of insertion and withdrawal are sufficiently…
Apparatus and method for thermal processing of semiconductor substrates
Granted: January 29, 2002
Patent Number:
6342691
A semiconductor substrate processing system and method of using a stable heating source with a large thermal mass relative to conventional lamp heating systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the substrate while reducing the potential of heat loss to the surrounding environment, particularly from the edges of the heat source and substrate. Aspects of the present invention include a dual resistive heater system comprising…
Systems and methods for two-sided etch of a semiconductor substrate
Granted: January 1, 2002
Patent Number:
6335293
A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase…
System and method for rapid thermal processing
Granted: December 18, 2001
Patent Number:
6331697
A system and method for thermally processing a substrate. A substrate is heated to a processing temperature at which the substrate is susceptible to plastic deformation or slip. An insulating cover may be removed to initially cool the substrate below such temperature before removal from the system. Gas pressure may also be adjusted to enhance heat transfer during processing and decrease heat transfer prior to removal of the substrate. Susceptors or surfaces for cooling the substrate may…
Systems and methods for robotic transfer of workpieces between a storage area and a processing chamber
Granted: November 13, 2001
Patent Number:
6315512
A workpiece handling system with dual load locks, a transport chamber and a process chamber. Workpieces may be retrieved from one load lock for processing at vacuum pressure, while workpieces are unloaded from the other load lock at the pressure of the surrounding envirornment. The transport chamber has a transport robot with two arms. Processed workpieces and new workpieces may be exchanged by a simple under/over motion of the two robot arms. The transport robot rotates about a central…
Silicon oxynitride film
Granted: October 16, 2001
Patent Number:
6303520
An oxynitride film on the surface of a silicon or silicon germanium substrate is described where film is substantially an oxide film at the film oxide interface, and the nitrogen content of the film increases with the distance away from the substrate. The film is made by a process of rapidly processing a clean silicon wafer in an atmosphere of a nitrogen containing gas containing a very small percentage of oxygen containing gas.
Apparatus and method for CVD and thermal processing of semiconductor substrates
Granted: October 9, 2001
Patent Number:
6301434
A thermal processing system and method for processing a semiconductor substrate. A lamp system radiates through a window to heat the substrate. A dual gas manifold provides purge gas through a top showerhead to prevent deposits on the window and provides gas through a lower showerhead to deposit a material on the substrate. A thin support and a radiative cavity with thin radiation shields is used to support and insulate the substrate. A peripheral heater also heats the edges to enhance…
Apparatus and method for pulsed plasma processing of a semiconductor substrate
Granted: July 3, 2001
Patent Number:
6253704
Apparatus and method for an improved etch process. A power source alternates between high and low power cycles to produce and sustain a plasma discharge. Preferably, the high power cycles couple sufficient power into the plasma to produce a high density of ions (≳1011cm−3) for etching. Preferably, the low power cycles allow electrons to cool off to reduce the average random (thermal) electron velocity in the plasma. Preferably, the low power cycle is limited in duration as…
Cleaning process for rapid thermal processing system
Granted: May 22, 2001
Patent Number:
6236023
A method for in-situ cleaning of a hot wall RTP system. Internal components are heated to high temperatures above 500° C. A halocarbon gas, inert gas and oxidizing gas are flowed through the reactor for a period which may exceed 20 minutes and then purged to remove contaminants.
