SEQUENTIAL CASCADING OF REACTION VOLUMES AS A CHEMICAL REUSE STRATEGY
Granted: September 5, 2013
Application Number:
20130228225
A substrate processing system includes one or more processing chambers defining N reaction volumes. N-1 first valves are arranged between the N reaction volumes. A controller communicates with the N-1 first valves and is configured to pressurize a first one of the N reaction volumes with precursor gas to a first target pressure, wait a first predetermined soak period, evacuate a second one of the N reaction volumes to a second target pressure that is lower than the first target pressure,…
Precursors for Plasma Activated Conformal Film Deposition
Granted: August 15, 2013
Application Number:
20130210241
A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido) silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing…
PURGING OF POROGEN FROM UV CURE CHAMBER
Granted: June 27, 2013
Application Number:
20130160946
An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into…
MECHANICAL SUPPRESSION OF PARASITIC PLASMA IN SUBSTRATE PROCESSING CHAMBER
Granted: April 18, 2013
Application Number:
20130092086
A system for reducing parasitic plasma in a semiconductor process comprises a first surface and a plurality of dielectric layers that are arranged between an electrode and the first surface. The first surface and the electrode have substantially different electrical potentials. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap…
SYSTEMS AND METHODS FOR CONTROLLING ETCH SELECTIVITY OF VARIOUS MATERIALS
Granted: January 3, 2013
Application Number:
20130005140
A method for filling a recessed feature of a substrate includes a) at least partially filling a recessed feature of a substrate with tungsten-containing film using at least one of chemical vapor deposition (CVD) and atomic layer deposition (ALD); b) at a predetermined temperature, using an etchant including activated fluorine species to selectively etch the tungsten-containing film more than an underlying material of the recessed feature without removing all of the tungsten-containing…
PEDESTAL WITH EDGE GAS DEFLECTOR FOR EDGE PROFILE CONTROL
Granted: January 3, 2013
Application Number:
20130000848
A substrate processing system includes a pedestal including a substrate supporting surface having a diameter that is greater than a diameter of a substrate to be processed by the substrate processing system. A first surface extends a first distance above the substrate supporting surface in a direction substantially perpendicular to the substrate supporting surface. The first distance is greater than or equal to one-half of a thickness of the substrate. A gap is defined between the first…
PEDESTAL COVERS
Granted: October 18, 2012
Application Number:
20120264051
Examples of novel semiconductor processing pedestals, and apparatuses including such pedestals, are described. These pedestals are specifically configured to provide uniform heat transfer to semiconductor substrates and to reduce maintenance complexity and/or frequency. Specifically, a pedestal may include a removable cover positioned over a metal platen of the pedestal. The removable cover is configured to maintain a consistent and uniform temperature profile of its substrate-facing…
INCREASING ETCH SELECTIVITY OF CARBON FILMS WITH LOWER ABSORPTION CO-EFFICIENT AND STRESS
Granted: October 11, 2012
Application Number:
20120258261
A method for depositing a film includes arranging a substrate in a plasma enhanced chemical vapor deposition chamber. A first ashable hardmask (AHM) layer that is carbon-based is deposited on the substrate. During the depositing of the first AHM layer, doping is performed with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide. An atomic percentage of the at least one dopant is greater than or equal to…
SYSTEMS AND METHODS FOR INHIBITING OXIDE GROWTH IN SUBSTRATE HANDLER VACUUM CHAMBERS
Granted: October 4, 2012
Application Number:
20120251271
A substrate handling robot includes an arm section and a wrist portion connected to the arm section. An end effector is connected to the wrist portion and is configured to support a substrate. A housing is arranged adjacent to the end effector and includes a gas outlet that directs gas onto an exposed surface of the substrate during transport.
REDUCTION OF A PROCESS VOLUME OF A PROCESSING CHAMBER USING A NESTED DYNAMIC INERT VOLUME
Granted: September 13, 2012
Application Number:
20120231628
A substrate processing chamber includes a lift actuator that moves a pedestal between a substrate loading position and a substrate processing position. An adjustable seal defines an expandable sealed volume between a bottom surface of the pedestal and a bottom surface of the substrate processing chamber and is moveable between the substrate loading position and the substrate processing position. When the pedestal is in the substrate processing position, the pedestal and the adjustable…
METHODS AND APPARATUSES FOR DETERMINING THICKNESS OF A CONDUCTIVE LAYER
Granted: May 24, 2012
Application Number:
20120129277
Methods and apparatuses for calibrating eddy current sensors. A calibration curve is formed relating thickness of a conductive layer in a magnetic field to a value measured by the eddy current sensors or a value derived from such measurement, such as argument of impedance. The calibration curve may be an analytic function having infinite number terms, such as trigonometric, hyperbolic, and logarithmic, or a continuous plurality of functions, such as lines. High accuracy allows the…
FAULT DETECTION APPARATUSES AND METHODS FOR FAULT DETECTION OF SEMICONDUCTOR PROCESSING TOOLS
Granted: May 17, 2012
Application Number:
20120123737
Fault detection apparatuses and methods for detecting a processing or hardware performance fault of a semiconductor production tool have been provided. In an exemplary embodiment, a method for detecting a fault of a semiconductor production tool includes sensing a signal associated with a test component of the production tool during operation of the production tool and converting the signal to an electronic test signal. A prerecorded signature signal corresponding to the test component…
GAS FLOW DISTRIBUTION RECEPTACLES, PLASMA GENERATOR SYSTEMS, AND METHODS FOR PERFORMING PLASMA STRIPPING PROCESSES
Granted: April 26, 2012
Application Number:
20120097331
Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of…
GAS AND LIQUID INJECTION METHODS AND APPARATUS
Granted: October 20, 2011
Application Number:
20110256724
A liquid injection system for a processing chamber includes a liquid injector that receives a liquid from a liquid supply and that selectively pulses the liquid into a conduit. A control module selects a number of pulses and a pulse width of the liquid injector. A gas supply supplies gas into the conduit. A sensor senses at least one of a first temperature and a first pressure in the conduit and that generates at least one of a first temperature signal and a first pressure signal,…
ELECTROPLATING CUP ASSEMBLY
Granted: September 29, 2011
Application Number:
20110233056
Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly…
SHIELDS FOR SUBSTRATE PROCESSING SYSTEMS
Granted: September 8, 2011
Application Number:
20110217465
A shielding system for a physical vapor deposition (PVD) chamber is disclosed. The PVD chamber includes a pedestal supporting a substrate. The shielding system includes a first annular portion and a second annular portion of a pedestal shield. The first annular portion is attached the pedestal at a first location. The first annular portion is located at or below a plane including the substrate. The second annular portion is attached to the pedestal at a second location that is below the…
RAPIDLY CLEANABLE ELECTROPLATING CUP SEAL
Granted: July 28, 2011
Application Number:
20110181000
Embodiments of a closed-contact electroplating cup assembly that may be rapidly cleaned while an electroplating system is on-line are disclosed. One disclosed embodiment comprises a cup assembly and a cone assembly, wherein the cup assembly comprises a cup bottom comprising an opening, a seal surrounding the opening, an electrical contact structure comprising a plurality of electrical contacts disposed around the opening, and an interior cup side that is tapered inwardly in along an…
PRECURSOR VAPOR GENERATION AND DELIVERY SYSTEM WITH FILTERS AND FILTER MONITORING SYSTEM
Granted: May 12, 2011
Application Number:
20110111136
A vapor delivery system for supplying vapor to a chamber in a plasma-enhanced chemical vapor deposition (PECVD) system includes a vapor supply that supplies vapor by vaporizing at least one liquid precursor in a carrier gas. A first path includes a first filter that filters the vapor flowing from the vapor supply to the chamber. At least one second path is parallel to the first path and includes a second filter that filters vapor flowing from the vapor supply to the chamber. A plurality…
Electrolyte Concentration Control System for High Rate Electroplating
Granted: April 14, 2011
Application Number:
20110083965
An electroplating apparatus for filling recessed features on a semiconductor substrate includes an electrolyte concentrator configured for concentrating an electrolyte having Cu2+ ions to form a concentrated electrolyte solution that would have been supersaturated at 20° C. The electrolyte is maintained at a temperature that is higher than 20° C., such as at least at about 40° C. The apparatus further includes a concentrated electrolyte reservoir and a plating cell, where the plating…
METHODS FOR MULTI-STEP COPPER PLATING ON A CONTINUOUS RUTHENIUM FILM IN RECESSED FEATURES
Granted: March 31, 2011
Application Number:
20110076390
Methods are provided for multi-step Cu metal plating on a continuous Ru metal film in recessed features found in advanced integrated circuits. The use of a continuous Ru metal film prevents formation of undesirable micro-voids during Cu metal filling of high-aspect-ratio recessed features, such as trenches and vias, and enables formation of large Cu metal grains that include a continuous Cu metal layer plated onto the continuous Ru metal film. The large Cu grains lower the electrical…
