METHOD FOR IMPROVING ADHESION OF LOW RESISTIVITY TUNGSTEN/TUNGSTEN NITRIDE LAYERS
Granted: March 10, 2011
Application Number:
20110059608
Methods of improving the adhesion of low resistivity tungsten/tungsten nitride layers are provided. Low resistivity tungsten/tungsten nitride layers with good adhesion are formed by treating a tungsten or tungsten nitride layer before depositing low resistivity tungsten. Treatments include a plasma treatment and a temperature treatment. According to various embodiments, the treatment methods involve different gaseous atmospheres and plasma conditions.
PLASMA IGNITION PERFORMANCE FOR LOW PRESSURE PHYSICAL VAPOR DEPOSITION (PVD) PROCESSES
Granted: March 3, 2011
Application Number:
20110048924
A plasma ignition system includes a first voltage supply that selectively supplies a plasma ignition voltage and a plasma maintenance voltage across an adapter ring and a cathode target of a physical vapor deposition (PVD) system. A second voltage supply selectively supplies a second voltage across the adapter ring and an anode ring of the PVD system. A plasma ignition control module ignites plasma using the plasma ignition voltage and the auxiliary plasma ignition voltage and, after the…
Monitoring of electroplating additives
Granted: February 3, 2011
Application Number:
20110025338
The working electrode in the flow channel of a flow-through electrolytic detection cell is preconditioned by flowing a preconditioning electroplating solution with preconditioner species through the flow channel while applying a negative potential. Flow of liquid through the flow channel is rapidly switched from preconditioning solution to a target solution containing an organic target solute to be measured. The transient response of the system resulting from exposure of the working…
System for Depositing a Film by Modulated Ion-Induced Atomic Layer Deposition (MII-ALD)
Granted: January 27, 2011
Application Number:
20110017139
The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density…
Heat Shield for Heater in Semiconductor Processing Apparatus
Granted: December 16, 2010
Application Number:
20100317197
A heat shield employed in semiconductor processing apparatus comprises a high performance insulation that has low thermal conductivity, such as, below the thermal conductivity of still air over a wide range of temperatures utilized in operation of the apparatus. As an example, the thermal conductivity of the insulation may be in the range of about 0.004 W/m·h to about 0.4 W/m·h over a temperature range of about 0° C. to about 600° C. or more. The deployment of the high performance…
REMOTE PLASMA PROCESSING OF INTERFACE SURFACES
Granted: December 16, 2010
Application Number:
20100317198
Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, and a remote plasma source configured to provide a remote plasma…
REMOTE PLASMA PROCESSING OF INTERFACE SURFACES
Granted: December 16, 2010
Application Number:
20100317178
Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to…
MAGNETIC ROTATIONAL HARDSTOP FOR ROBOT
Granted: November 4, 2010
Application Number:
20100278623
Rotational hardstop assemblies that provide greater than 360 degrees of non-continuous rotation for rotating mechanisms are provided. In certain embodiments, an assembly is used to provide 630 or more degrees of rotation for the shoulder axis of a robot, such as a wafer transfer robot. The rotational hardstop assemblies include opposing magnets as springs. According to various embodiments, the opposing magnets provide non-contact engagement and produce no contact noise nor have any wear…
METHOD FOR IMPROVING UNIFORMITY AND ADHESION OF LOW RESISTIVITY TUNGSTEN FILM
Granted: October 28, 2010
Application Number:
20100273327
Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.
PLATING METHODS FOR LOW ASPECT RATIO CAVITIES
Granted: September 9, 2010
Application Number:
20100224501
The present invention relates to methods and apparatus for plating a conductive material on a workpiece surface in a highly desirable manner. Using a workpiece-surface-influencing device, such as a mask or sweeper, that preferentially contacts the top surface of the workpiece, relative movement between the workpiece and the workpiece-surface-influencing device is established so that an additive in the electrolyte solution disposed on the workpiece and which is adsorbed onto the top…
MAGNETICALLY ACTUATED CHUCK FOR EDGE BEVEL REMOVAL
Granted: September 2, 2010
Application Number:
20100219920
Provided are magnetically actuated wafer chucks that permit a wafer to be clamped or undamped at any time during a process and at any rotational speed, as desired. Such wafer chucks may include constraining members that are movable between open and closed positions. In a closed position, a constraining member aligns the wafer after wafer handoff and/or clamps the wafer during rotation to prevent it from flying off the chuck. In an open position, the constraining member moves away from…
METHOD FOR DEPOSITING THIN TUNGSTEN FILM WITH LOW RESISTIVITY AND ROBUST MICRO-ADHESION CHARACTERISTICS
Granted: June 24, 2010
Application Number:
20100159694
Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based…
Electroplating Apparatus with Vented Electrolyte Manifold
Granted: June 17, 2010
Application Number:
20100147679
Embodiments related to increasing a uniformity of an electroplated film are disclosed. For example, one disclosed embodiment provides an electroplating apparatus comprising a plating chamber, a work piece holder, a cathode contact configured to electrically contact a work piece, and an anode contact configured to electrically contact an anode disposed in the plating chamber. A diffusing barrier is disposed between the cathode contact and the anode contact to provide a uniform electrolyte…
METHOD FOR IMPROVED THICKNESS REPEATABILITY OF PECVD DEPOSITED CARBON FILMS
Granted: June 17, 2010
Application Number:
20100151691
Provided herein are improved methods of depositing carbon-based films using acetylene as a precursor. The methods involve using a low-vapor pressure solvent, e.g., dimethylfluoride (DMF) to stabilize the acetylene and delivering the acetylene to a deposition chamber. The methods provide improved wafer-to-wafer thickness uniformity and increase the usable amount of acetylene in an acetylene source to over 95%.
METHODS FOR DEPOSITING TUNGSTEN FILMS HAVING LOW RESISTIVITY FOR GAPFILL APPLICATIONS
Granted: June 10, 2010
Application Number:
20100144140
Methods of filling gaps or recessed features on substrates are provided. According to various embodiments, the methods involve bulk deposition of tungsten to partially fill the feature followed by a removing a top portion of the deposited tungsten. In particular embodiments, the top portion is removed by exposing the substrate to activated fluorine species. By selectively removing sharp and protruding peaks of the deposited tungsten grains, the removal operation polishes the tungsten…
METHOD AND APPARATUS FOR ELECTROPLATING
Granted: May 13, 2010
Application Number:
20100116672
An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided…
Partial Contact Wafer Retaining Ring Apparatus
Granted: May 13, 2010
Application Number:
20100120335
The partial contact wafer retaining ring apparatus is disclosed. For example, one disclosed embodiment provides a wafer retaining ring comprising a ring for retaining the wafer, the ring having an inner diameter surface configured to restrict lateral wafer motion, and at least one interface surface configured to interface with a polishing surface. The interface surface comprises a recessed section adjacent to the ring inner diameter, configured to preclude contact between the recessed…
METHOD FOR IMPROVING PROCESS CONTROL AND FILM CONFORMALITY OF PECVD FILM
Granted: April 22, 2010
Application Number:
20100099271
A method for forming a silicon-based dielectric film on a substrate with a single deposition process operation using pulsed plasma enhanced chemical vapor deposition (PECVD) wherein the high frequency radio frequency power of the plasma is pulsed, allows enhanced control, efficiency and product quality of the PECVD process. Pulsing the high frequency RF power of the plasma reduces the deposited film thickness per unit time the high frequency RF power of the plasma is on. This yields…
MODULATED ION-INDUCED ATOMIC LAYER DEPOSITION (MII-ALD)
Granted: March 4, 2010
Application Number:
20100055342
The present invention relates to a cyclic deposition process suitable for depositing an elemental film. The process employs an enhanced atomic layer deposition technique.
METHOD FOR REDUCING TUNGSTEN ROUGHNESS AND IMPROVING REFLECTIVITY
Granted: March 4, 2010
Application Number:
20100055904
Methods of producing low resistivity tungsten bulk layers having lower roughness and higher reflectivity are provided. The smooth and highly reflective tungsten layers are easier to photopattern than conventional low resistivity tungsten films. The methods involve CVD deposition of tungsten in the presence of alternating nitrogen gas pulses, such that alternating portions of the film are deposited by CVD in the absence of nitrogen and in the presence of nitrogen. According to various…
