METHODS FOR PRODUCING LOW STRESS POROUS AND CDO LOW-K DIELECTRIC MATERIALS USING PRECURSORS WITH ORGANIC FUNCTIONAL GROUPS
Granted: September 24, 2009
Application Number:
20090239390
Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon-carbon triple bond, or carbon-carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has a…
Convenient Replacement of Anode in Semiconductor Electroplating Apparatus
Granted: August 27, 2009
Application Number:
20090211900
The convenient replacement of an anode in a semiconductor electroplating apparatus is disclosed. For example, in one disclosed embodiment, an electroplating system comprises an electroplating cell having an anode chamber, a cathode chamber, a selective transport barrier separating the anode chamber and the cathode chamber, and an anode disposed within the anode chamber. The anode comprises a plurality of pieces of anode material disposed within a removable anode holder.
DETECTING THE PRESENCE OF A WORKPIECE RELATIVE TO A CARRIER HEAD
Granted: July 16, 2009
Application Number:
20090181475
A carrier head for a workpiece includes a capacitive sensor that is configured to detect the presence of the workpiece during a chemical mechanical planarization/polishing procedure. The sensor subsystem can detect a wafer unloaded condition, a wafer loaded condition, and different in-process conditions that might occur during processing of the wafer. One embodiment of such a carrier head includes a body, a structure coupled to the body, and a capacitive sensor coupled to the body. The…
METHODS FOR FORMING ALL TUNGSTEN CONTACTS AND LINES
Granted: June 25, 2009
Application Number:
20090163025
Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a…
FAULT DETECTION APPARATUSES AND METHODS FOR FAULT DETECTION OF SEMICONDUCTOR PROCESSING TOOLS
Granted: June 18, 2009
Application Number:
20090153144
Fault detection apparatuses and methods for detecting a processing or hardware performance fault of a semiconductor production tool have been provided. In an exemplary embodiment, a method for detecting a fault of a semiconductor production tool comprises sensing a signal associated with a test component of the production tool during operation of the production tool and converting the signal to an electronic test signal. A prerecorded signature signal corresponding to the test component…
METHOD FOR IMPROVING UNIFORMITY AND ADHESION OF LOW RESISTIVITY TUNGSTEN FILM
Granted: June 11, 2009
Application Number:
20090149022
Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.
APPARATUS AND METHODS FOR PRECOMPILING PROGRAM SEQUENCES FOR WAFER PROCESSING
Granted: May 21, 2009
Application Number:
20090132062
Disclosed are apparatus and methods for embodiments for efficiently and flexibly controlling hardware devices in a semiconductor processing system are provided for use in a distributed control arrangement. In general, the distributed arrangement includes at least one upper-level controller that is configurable with a computer program sequence of instructions for controlling one or more hardware devices of a processing tool. The hardware devices are controlled through one or more…
METHOD AND APPARATUS FOR TEACHING A WORKPIECE TRANSFER ROBOT
Granted: May 7, 2009
Application Number:
20090118862
A method is provided for teaching a transfer robot used in conjunction with a workpiece processing system including a pedestal assembly, a light sensor having an optical input fixedly coupled to the pedestal assembly, a transfer robot having an end effector, and a processing chamber containing the pedestal assembly and light sensor. The method includes the steps of producing light within the processing chamber, moving the end effector over the optical input such that amount of light…
Rapidly Cleanable Electroplating Cup Assembly
Granted: April 30, 2009
Application Number:
20090107835
Embodiments of a closed-contact electroplating cup assembly that may be rapidly cleaned while an electroplating system is on-line are disclosed. One disclosed embodiment comprises a cup assembly and a cone assembly, wherein the cup assembly comprises a cup bottom comprising an opening, a seal surrounding the opening, an electrical contact structure comprising a plurality of electrical contacts disposed around the opening, and an interior cup side that is tapered inwardly in along an…
Closed Contact Electroplating Cup Assembly
Granted: April 30, 2009
Application Number:
20090107836
Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly…
TEMPERATURE CONTROLLED SHOWERHEAD
Granted: April 16, 2009
Application Number:
20090095220
A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.
CHEMICAL MECHANICAL POLISHING ASSEMBLY WITH ALTERED POLISHING PAD TOPOGRAPHICAL COMPONENTS
Granted: March 26, 2009
Application Number:
20090081932
A chemical-mechanical polishing apparatus is provided that creates a uniform kinematical pattern on the surface of a wafer being polished. The apparatus may have a polishing pad comprising a polishing pad surface having a center point that lies within an axis of motion for the polishing pad and a plurality of grooves entrenched in the polishing pad surface and defining a pattern of shapes. The pattern has an axis of symmetry that is offset from the polishing pad surface center point. The…
HIGH DOSE IMPLANTATION STRIP (HDIS) IN H2 BASE CHEMISTRY
Granted: February 26, 2009
Application Number:
20090053901
Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.
CMP APPARATUSES WITH POLISHING ASSEMBLIES THAT PROVIDE FOR THE PASSIVE REMOVAL OF SLURRY
Granted: December 25, 2008
Application Number:
20080318495
Chemical mechanical planarization apparatuses with polishing assemblies that provide for the passive removal of slurry are provided. In accordance with an embodiment, a work piece polishing assembly comprises a polishing pad comprising a polishing surface and an exhaust aperture that extends through the polishing pad from the polishing surface and is configured to receive a slurry from the polishing surface. An underlying member is disposed underlying the polishing pad and comprises a…
PLATEN ASSEMBLY AND WORK PIECE CARRIER HEAD EMPLOYING FLEXIBLE CIRCUIT SENSOR
Granted: December 11, 2008
Application Number:
20080305717
A platen assembly is provided for supporting a polish pad of the type utilized to planarize a wafer. The platen assembly comprises a sensor system and a polish platen having a first surface for supporting the polish pad. The sensor system comprises a flexible sensor and a flexible circuit operatively coupled to the sensor controller. The flexible circuit includes a first flexible sensor disposed proximate the first surface.
Methods for Fabricating Semiconductor Structures With Backside Stress Layers
Granted: November 20, 2008
Application Number:
20080286918
Methods for fabricating semiconductor structures with backside stress layers are provided. In one exemplary embodiment, the method comprises the steps of providing a semiconductor device formed on and within a front surface of a semiconductor substrate. The semiconductor device comprises a channel region. A plurality of dielectric layers is formed overlying the semiconductor device. The plurality of dielectric layers comprises conductive connections that are in electrical communication…
MOVING INTERLEAVED SPUTTER CHAMBER SHIELDS
Granted: October 30, 2008
Application Number:
20080264340
A shielding system for a physical vapor deposition chamber having a sputter target above the pedestal. The shielding system comprises a pedestal shield attachable to the pedestal and movable therewith. The pedestal shield surrounds and extends outward from the pedestal toward the chamber side or lower walls. The system also comprises a sidewall shield adapted to extend substantially around and within the chamber sidewalls, and downward from an upper portion thereof. The sidewall shield…
METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FOR HIGH ASPECT RATIO AND SMALL FEATURES
Granted: October 16, 2008
Application Number:
20080254623
The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing…
METHOD FOR ETCHING ORGANIC HARDMASKS
Granted: October 16, 2008
Application Number:
20080254639
A method of etching or removing an amorphous carbon organic hardmask overlying a low dielectric constant film in a lithographic process. The method includes providing a dielectric film having thereover an amorphous carbon organic hardmask to be removed, the dielectric film having a dielectric constant no greater than about 4.0, introducing over the amorphous carbon organic hardmask an ionizable gas comprising a mixture of hydrogen and an oxidizing gas, and applying energy to the mixture…
METHODS FOR STRIPPING PHOTORESIST AND/OR CLEANING METAL REGIONS
Granted: October 9, 2008
Application Number:
20080248656
Methods are provided for cleaning metal regions overlying semiconductor substrates. A method for removing material from a metal region comprises heating the metal region, forming a plasma from a gas comprising hydrogen and carbon dioxide, and exposing the metal region to the plasma.
