Apparatus and method of effective fluid injection and vaporization for chemical vapor deposition application
Granted: November 6, 2012
Patent Number:
8302884
A cross-flow injector is used to introduce fluids into a chemical vapor deposition process chamber separately and simultaneously for efficiently atomizing and vaporizing the fluids. The cross-flow injector consists of a three port cavity having an inlet nozzle, a throat region, and an exit nozzle. The injector cavity is defined by the tapering of the inlet and exit nozzles to the smaller diameter of the throat region. The tapering allows for pressure differentials at the inlet, throat,…
Conformal films on semiconductor substrates
Granted: October 30, 2012
Patent Number:
8298933
A layer of diffusion barrier or seed material is deposited on a semiconductor substrate having a recessed feature. The method may include a series of new deposition cycles, for example, a first net deposition cycle and a second net deposition cycle. The first net deposition cycle includes depositing a first deposited amount of the diffusion barrier or seed material and etching a first etched amount of the diffusion barrier or seed material. The second net deposition cycle including…
Multistep method of depositing metal seed layers
Granted: October 30, 2012
Patent Number:
8298936
Metal seed layers are deposited on a semiconductor substrate having recessed features by a method that involves at least three operations. In this method, a first layer of metal is deposited onto the substrate to cover at least the bottom portions of the recessed features. The first layer of metal is subsequently redistributed to improve sidewall coverage of the recessed features. Next, a second layer of metal is deposited on at least the field region of the substrate and on the bottom…
Flexible gas mixing manifold
Granted: October 23, 2012
Patent Number:
8291935
Each of plurality of gas sources flows to a different one of a plurality of separate source gas flow paths. Then, a source gas is distributed directly from each of plurality of separate source gas flow paths to a plurality of separate gas mixture flow paths, thereby distributing a plurality of source gases to each of different flow paths. A plurality of separate gas mixture streams is generated by flowing a plurality of source gases in each of a plurality of separate gas mixture flow…
Transferring heat in loadlocks
Granted: October 16, 2012
Patent Number:
8288288
Methods that increase the overall rate of heat transfer between a substrate and a heat sink or source, e.g., in a loadlock are provided. According to various embodiments, the methods involve varying the heat transfer coefficient of a heat transfer gas in the loadlock or other chamber. The heat transfer coefficient is varied to reduce the time-dependent variation of the rate of heat transfer. As a result, the overall rate of heat transfer is improved. In certain embodiments, the methods…
Depositing conformal boron nitride film by CVD without plasma
Granted: October 16, 2012
Patent Number:
8288292
A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is…
Purging of porogen from UV cure chamber
Granted: October 9, 2012
Patent Number:
8282768
An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into…
Closed loop control system for RF power balancing of the stations in a multi-station processing tool with shared RF source
Granted: October 9, 2012
Patent Number:
8282983
Apparatus and methods to minimize wafer-to-wafer process variation in RF-based semiconductor processing reactors with shared RF source for multiple processing areas. RF sensors associated with each processing area sends signal to the RF balance controller. The controller modifies station impedance using power adjustment mechanisms. As a result, station to station distribution of a selected RF parameter (e.g., load power) may match the station set points. Closed loop control maintains…
Measuring in-situ UV intensity in UV cure tool
Granted: October 9, 2012
Patent Number:
8283644
Provided are improved apparatus and methods for radiative treatment. In some embodiments, a semiconductor processing apparatus for radiative cure includes a process chamber and a radiation assembly external to the process chamber. The radiation assembly transmits radiation into the chamber on a substrate holder through a chamber window. A radiation detector measures radiation intensity from time to time. The assembly includes a gas inlet and exhaust operable to flow a…
Selective capping of copper
Granted: October 2, 2012
Patent Number:
8278216
The present invention provides methods of selectively depositing refractory metal and metal nitride cap layers onto copper lines inlaid in a dielectric layer. The methods result in formation of a cap layer on the copper lines without significant formation on the surrounding dielectric material. The methods typically involve exposing the copper lines to a nitrogen-containing organo-metallic precursor and a reducing agent under conditions that the metal or metal nitride layer is…
Flowable oxide deposition using rapid delivery of process gases
Granted: October 2, 2012
Patent Number:
8278224
Methods and apparatus for filling gaps on partially manufactured semiconductor substrates with dielectric material are provided. In certain embodiments, the methods include introducing a first process gas into the processing chamber and accumulating a second process gas in an accumulator maintained at a pressure level substantially highest than that of the processing chamber pressure level. The second process gas is then rapidly introduced from the accumulator into the processing…
Segmented electroplating anode and anode segment
Granted: October 2, 2012
Patent Number:
D668211
Ashing method
Granted: September 25, 2012
Patent Number:
8273259
Ashing of organic material is conducted initially at a low temperature and then at a high temperature. A low flow rate of ashing gas maximizes ashing rate at the low temperature, and a high flow rate of ashing gas maximizes ashing rate at a high temperature. Preferably, a crossover temperature of a particular organic material in a given ashing system is determined, the crossover temperature characterized in that below the crossover temperature, a decrease in ashing gas flow rate results…
Load lock design for rapid wafer heating
Granted: September 25, 2012
Patent Number:
8273670
A semiconductor processing tool heats wafers using radiant heat and resistive heat in chamber or in a load lock where pressure changes. The wafers are heated in greater part with a resistive heat source until a transition temperature or pressure is reached, then they are heated in greater part with a radiant heat source. Throughput improves for the tool because of the wafers can reach a high temperature uniformly in seconds.
Method and apparatus for electrochemical planarization of a workpiece
Granted: September 18, 2012
Patent Number:
8268135
An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured…
Selective electrochemical accelerator removal
Granted: September 18, 2012
Patent Number:
8268154
Methods and apparatus are provided for planar metal plating on a workpiece having a surface with recessed regions and exposed surface regions; comprising the steps of: causing a plating accelerator to become attached to said surface including the recessed and exposed surface regions; selectively removing the plating accelerator from the exposed surface regions without performing substantial metal plating on the surface; and after removal of plating accelerator is at least partially…
Copper electroplating solutions with halides
Granted: September 18, 2012
Patent Number:
8268155
Methods, electroplating solution, and apparatuses for electroplating copper into a surface of a partially fabricated semiconductor substrate are provided. Electroplating solutions include copper ions, suppressor additives, chloride ions, and alternative halide ions, which include bromide ions and/or iodide ions. The concentration of the alternative halide ions in the solution may be between about 0.25 ppm and 20 ppm. Addition of the alternative halide ions at certain concentrations…
Interfacial capping layers for interconnects
Granted: September 18, 2012
Patent Number:
8268722
Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing Al, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line…
Apparatus and method for cleaning and removing liquids from front and back sides of a rotating workpiece
Granted: September 11, 2012
Patent Number:
8261758
An apparatus for simultaneously rinsing and drying front and back surfaces of a workpiece comprises a chuck adapted to spin the workpiece, a plurality of posts coupled to the chuck and adapted to support the workpiece, and first and second mechanical arms. The first mechanical arm is adapted to be positioned between the chuck and the workpiece, and to sweep along at least part of the workpiece back surface. The first mechanical arm comprises at least a first rinsing liquid nozzle, and a…
Methods and apparatus for cleaning deposition reactors
Granted: September 11, 2012
Patent Number:
8262800
Improved methods of removing tungsten film from the interior reactor and reactor component surfaces between tungsten deposition operations are provided. The methods involve increasing the availability of molecular fluorine to remove tungsten from the reactor while maintaining fast removal rates. Certain embodiments involve a multi-stage process including a stage in which atomic fluorine is introduced at a low pressure (e.g., about 8 Torr or less) and a stage in which molecular fluorine…
