Plasma-activated deposition of conformal films
Granted: January 24, 2012
Patent Number:
8101531
Methods and hardware for depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method for forming a thin conformal film comprises, in a first phase, generating precursor radicals off of a surface of the substrate and adsorbing the precursor radicals to the surface to form surface active species; in a first purge phase, purging residual precursor from the process station; in a second phase, supplying a…
Method and apparatus for teaching a workpiece transfer robot
Granted: January 17, 2012
Patent Number:
8099192
A method is provided for teaching a transfer robot used in conjunction with a workpiece processing system including a pedestal assembly, a light sensor having an optical input fixedly coupled to the pedestal assembly, a transfer robot having an end effector, and a processing chamber containing the pedestal assembly and light sensor. The method includes the steps of producing light within the processing chamber, moving the end effector over the optical input such that amount of light…
Remote plasma processing of interface surfaces
Granted: December 27, 2011
Patent Number:
8084339
Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus includes a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to…
Apparatus and methods for precompiling program sequences processing for wafer processing
Granted: December 20, 2011
Patent Number:
8082044
Disclosed are apparatus and methods for embodiments for efficiently and flexibly controlling hardware devices in a semiconductor processing system are provided for use in a distributed control arrangement. In general, the distributed arrangement includes at least one upper-level controller that is configurable with a computer program sequence of instructions for controlling one or more hardware devices of a processing tool. The hardware devices are controlled through one or more…
Methods for multi-step copper plating on a continuous ruthenium film in recessed features
Granted: December 13, 2011
Patent Number:
8076241
Methods are provided for multi-step Cu metal plating on a continuous Ru metal film in recessed features found in advanced integrated circuits. The use of a continuous Ru metal film prevents formation of undesirable micro-voids during Cu metal filling of high-aspect-ratio recessed features, such as trenches and vias, and enables formation of large Cu metal grains that include a continuous Cu metal layer plated onto the continuous Ru metal film. The large Cu grains lower the electrical…
Ternary tungsten-containing resistive thin films
Granted: November 22, 2011
Patent Number:
8062977
Heater elements made of high resistivity ternary and quaternary thin films containing three or more of W, C, O, N and Si are provided. The thin films have resistivities at least about 1000 ??-cm at 50 to 60 Angstroms. The ternary and quaternary films have improved stability over binary films on anneal. Methods of depositing the thin films are also provided. The methods involve depositing the film from an organometallic tungsten precursor under conditions such that a highly resistive,…
Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles
Granted: November 22, 2011
Patent Number:
8062983
Porous dielectric layers are produced by embedding and removing nanoparticles in composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the conductive material is provided with a relatively smooth continuous surface on which to deposit.
Method for post-etch cleans
Granted: November 15, 2011
Patent Number:
8058181
The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and…
High throughput method of in transit wafer position correction in system using multiple robots
Granted: November 15, 2011
Patent Number:
8060252
Methods correcting wafer position error are provided. The methods involve measuring wafer position error on a robot, e.g. a dual side-by-side end effector robot, during transfer to an intermediate station. This measurement data is then used by a second robot to perform wafer pick moves from the intermediate station with corrections to center the wafer. Wafer position correction may be performed at only one location during the transfer process. Also provided are systems and apparatuses…
Atomic layer removal process with higher etch amount
Granted: November 15, 2011
Patent Number:
8058179
Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially “reset.” A higher overall etch rate is achieved by a multiple exposure with pump down ALR process.
Photoresist strip method for low-k dielectrics
Granted: November 15, 2011
Patent Number:
8058178
The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer. Methods involve implementing a plasma operation using hydrogen and a weak oxidizing agent, such as carbon dioxide. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material…
Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
Granted: November 15, 2011
Patent Number:
8058170
Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based…
Electroplating flow shaping plate having offset spiral hole pattern
Granted: November 8, 2011
Patent Number:
D648289
Closed loop temperature heat up and control utilizing wafer-to-heater pedestal gap modulation
Granted: November 8, 2011
Patent Number:
8052419
Methods and apparatuses that decouple wafer temperature from pre-heat station residence time, thereby improving wafer-to-wafer temperature uniformity, are provided. The methods involve maintaining a desired temperature by varying the distance between the wafer and a heater. In certain embodiments, the methods involve rapidly approaching a predetermined initial distance and then obtaining and maintaining a desired final temperature using closed loop temperature control. In certain…
Methods for forming all tungsten contacts and lines
Granted: November 8, 2011
Patent Number:
8053365
Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a…
Method of reducing plasma stabilization time in a cyclic deposition process
Granted: November 8, 2011
Patent Number:
8053372
The present invention relates to an enhanced cyclic deposition process suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. The deposition enhancement is derived from ions generated in a plasma. The techniques described reduce the time required for plasma stabilization, thereby reducing deposition time and improving…
Diffusion barrier layers
Granted: November 8, 2011
Patent Number:
8053861
Provided are methods and apparatuses for depositing barrier layers for blocking diffusion of conductive materials from conductive lines into dielectric materials in integrated circuits. The barrier layer may contain copper. In some embodiments, the layers have conductivity sufficient for direct electroplating of conductive materials without needing intermediate seed layers. Such barrier layers may be used with circuits lines that are less than 65 nm wide and, in certain embodiments, less…
Apparatus and methods for monitoring health of semiconductor process systems
Granted: November 8, 2011
Patent Number:
8055370
Disclosed are apparatus and methods for monitoring an operation parameter of a process tool, independently of a process system recipe, are provided. In general, an indirect effect that results from implementing an event from a process system recipe on the process system is monitored without using the specific values or setpoints that are entered for such event into the process system to thereby change a state of such process system. In one embodiment, the behavior of a process device as…
Process for electroplating metals into microscopic recessed features
Granted: November 1, 2011
Patent Number:
8048280
Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to…
Methods for growing low-resistivity tungsten film
Granted: November 1, 2011
Patent Number:
8048805
Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to…
