Methods for the use of alkoxysilanol precursors for vapor deposition of SiOfilms
Granted: November 13, 2007
Patent Number:
7294583
A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more efficiently than previous methods using alkoxysilanes since fewer oxidation reactions are required. In addition, the dielectric can be formed with or without a metal-containing catalyst/nucleation layer, so that metal content in…
Pulsed deposition layer gap fill with expansion material
Granted: October 30, 2007
Patent Number:
7288463
Conformal dielectric deposition processes supplemented with a deposited expansion material can fill high aspect ratio narrow width gaps with significantly reduced incidence of voids or weak spots. The technique can also be used generally to form composites, such as for the densification of any substrate having open spaces or gaps to be filled without the incidence of voids or seams.
Photoresist strip method for low-k dielectrics
Granted: October 30, 2007
Patent Number:
7288484
The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer. Methods involve implementing a plasma operation using hydrogen and a weak oxidizing agent, such as carbon dioxide. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material…
Device providing electrical contact to the surface of a semiconductor workpiece during processing
Granted: October 16, 2007
Patent Number:
7282124
Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically…
Low-k SiC copper diffusion barrier films
Granted: October 16, 2007
Patent Number:
7282438
Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to…
Use of metallocenes to inhibit copper oxidation during semiconductor processing
Granted: October 9, 2007
Patent Number:
7279417
Methods for protecting an exposed copper surface of a partially fabricated IC from oxidation during exposure to an oxygen-containing environment are disclosed. The methods involve treating the exposed copper surface with a metallocene compound in order to minimize formation of copper oxide on the exposed surface, and exposing the copper surface to an oxygen-containing environment.
Reactive barrier/seed preclean process for damascene process
Granted: September 25, 2007
Patent Number:
7273808
A method for making a multilayer interconnect electronic component structure, and, in particular, an integrated circuit semiconductor device made using a copper damascene method is provided. The process of the invention uses a method for pre-cleaning exposed copper surfaces in the structure. The method employs a cleaning composition containing a nitrogen containing material and an oxygen containing material and also optionally a hydrogen containing material to remove the copper oxide…
Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry
Granted: September 18, 2007
Patent Number:
7271112
Methods of forming conformal films with increased density are described. The methods may be used to improve gap fill in semiconductor device manufacturing by eliminating seams and voids. The methods involve operating at high reactant partial pressure. Additionally, film properties may be further enhanced by optimizing the temperature of the substrate during exposure to the metal-containing and/or silicon-containing precursor gases commonly used in conformal film deposition techniques…
Methods for monitoring a chemical mechanical planarization process of a metal layer using an in-situ eddy current measuring system
Granted: September 4, 2007
Patent Number:
7264537
Methods are provided for monitoring a CMP process. An exemplary method comprises generating a plurality of thickness measurements of a metal layer using an in-situ eddy current measuring system. The thickness measurements are analyzed to derive a plurality of work piece metrics and the work piece metrics are assessed to determine if a predetermined number is within a predetermined specification. A signal is generated if the predetermined number of the work piece metrics is outside the…
Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
Granted: September 4, 2007
Patent Number:
7265061
Methods and apparatus for preparing a porous low-k dielectric material on a substrate are provided. The methods optionally involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film leaving a porous dielectric matrix and further exposing the dielectric matrix to ultraviolet radiation to increase the mechanical strength of the dielectric matrix. Some methods involve activating a gas to create reactive gas species that can clean a…
Method of forming low-resistivity tungsten interconnects
Granted: August 28, 2007
Patent Number:
7262125
Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where…
Efficient wafer processing technology
Granted: August 21, 2007
Patent Number:
7257893
Consistent excess conductive material is provided for plated conductors in integrated circuit metallization, regardless of the size and depth of trenches/vias into which the conductive material is deposited. Accordingly, subsequent processing (e.g., material removal) can be consistent and efficient for wafers with different feature sizes (particularly different depths), and for wafers at different metallization levels.
Method to improve mechanical strength of low-k dielectric film using modulated UV exposure
Granted: August 7, 2007
Patent Number:
7253125
Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrinkage and limiting any increases in the dielectric constant of the film. Methods improve film hardness, modulus and cohesive strength, which provide better integration capability and improved…
Method and apparatus for eliminating defects and improving uniformity in electrochemically processed conductive layers
Granted: July 31, 2007
Patent Number:
7250103
A method of removing material from a conductive surface of a workpiece while the conductive surface and an electrode are wetted by a process solution. The method comprises the steps of applying power between the conductive surface and the electrode, rendering the conductive surface anodic. The method includes the step of allowing a passivation layer to build up on the conductive surface/The method includes the step of applying an external influence to the conductive surface to…
Method and system for optically enhanced metal planarization
Granted: July 31, 2007
Patent Number:
7250104
The methods and systems described provide for radiation assisted material deposition, removal, and planarization at a surface, edge, and/or bevel of a workpiece such as a semiconductor wafer. Exemplary processes performed on a workpiece surface having topographical features include radiation assisted electrochemical material deposition, which produces an adsorbate layer outside of the features to suppress deposition outside of the features and to encourage, through charge conservation,…
Method and system for electroprocessing conductive layers
Granted: July 24, 2007
Patent Number:
7247558
The invention provides a process for forming a planar copper structure on a wafer surface in a first module and a second module of a system. During the process, a copper layer is formed on the wafer surface by utilizing an electrochemical deposition process in the first module. After the deposition, the wafer is moved to the second module of the system and an electrochemical mechanical polishing process is applied to planarize the copper layer to a predetermined thickness. The first and…
Method and system to provide electrical contacts for electrotreating processes
Granted: July 17, 2007
Patent Number:
7244347
Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.
Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups
Granted: July 10, 2007
Patent Number:
7241704
Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has…
Low-force electrochemical mechanical processing method and apparatus
Granted: July 3, 2007
Patent Number:
7238092
The present invention relates to semiconductor integrated circuit technology and discloses an electrochemical mechanical processing system for uniformly distributing an applied force to a workpiece surface. The system includes a workpiece carrier for positioning or holding the workpiece surface and a workpiece-surface-influencing-device (WSID). The WSID is used to uniformly distribute the applied force to the workpiece surface and includes various layers that are used to process and…
Low-k B-doped SiC copper diffusion barrier films
Granted: July 3, 2007
Patent Number:
7239017
The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
