Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
Granted: March 25, 2008
Patent Number:
7348042
The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density…
Helium-based etch process in deposition-etch-deposition gap fill
Granted: March 18, 2008
Patent Number:
7344996
Plasma etch processes incorporating helium-based etch chemistries can remove dielectric a semiconductor applications. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate helium as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.
Apparatus for electroprocessing a workpiece surface
Granted: March 11, 2008
Patent Number:
7341649
The present invention deposits a conductive material from an electrolyte solution to a predetermined area of a wafer. The steps that are used when making this application include applying the conductive material to the predetermined area of the wafer using an electrolyte solution disposed on a surface of the wafer, when the wafer is disposed between a cathode and an anode, and preventing accumulation of the conductive material to areas other than the predetermine area by mechanically…
Methods for producing low-k CDO films
Granted: March 11, 2008
Patent Number:
7341761
Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon—carbon triple bond, or carbon—carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has…
Methods for the electrochemical deposition of copper onto a barrier layer of a work piece
Granted: March 11, 2008
Patent Number:
7341946
Methods are provided for electrochemically depositing copper on a work piece. One method includes the step of depositing overlying the work piece a barrier layer having a surface and subjecting the barrier layer surface to a surface treatment adapted to facilitate deposition of copper on the barrier layer. Copper then is electrochemically deposited overlying the barrier layer.
Method for fabrication of semiconductor interconnect structure with reduced capacitance, leakage current, and improved breakdown voltage
Granted: March 4, 2008
Patent Number:
7338908
An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or…
Carrier head for workpiece planarization/polishing
Granted: February 26, 2008
Patent Number:
7335092
A carrier head for supporting a workpiece is provided. The carrier head comprises a mount plate having an aperture therethrough, and a clamp ring having a foot portion and a first leg portion extending therefrom. The first leg portion extends through the aperture, and the foot portion abuts the mount plate proximate the aperture. A flexible bladder has first and second ribs that are received between the mount plate and the foot portion. An annular fastener is removably coupled to the leg…
Methods for depositing copper on a noble metal layer of a work piece
Granted: February 26, 2008
Patent Number:
7335288
Methods for electrodeposition of copper on a noble metal layer of a work piece are provided. An exemplary method includes exposing the noble metal layer to an electrodeposition composition. The electrodeposition composition comprises a copper salt, a suppressor, an accelerator and an electrolyte. The electrodeposition of copper on a surface of the noble metal layer is initiated by application of a predetermined current density to the work piece. The electrodeposition of copper is…
Device providing electrical contact to the surface of a semiconductor workpiece during processing
Granted: February 12, 2008
Patent Number:
7329335
Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically…
PMOS transistor with compressive dielectric capping layer
Granted: February 5, 2008
Patent Number:
7327001
A salicide layer is deposited on the source/drain regions of a PMOS transistor. A dielectric capping layer having residual compressive stress is formed on the salicide layer by depositing a plurality of PECVD dielectric sublayers and plasma-treating each sublayer. Compressive stress from the dielectric capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in the PMOS channel. To form a compressive dielectric layer, a…
Cast pedestal with heating element and coaxial heat exchanger
Granted: February 5, 2008
Patent Number:
7327948
The present invention provides a heat transfer assembly that, when coupled to an object, is capable of keeping the object at a uniform elevated temperature while removing large amounts of heat from an external source. The assembly may be contained in a pedestal for use in a UV-cure chamber. The heat transfer assembly includes a heating element to control the wafer temperature and a cooling element to remove incident IR heat from the wafer and pedestal. A heat resistant layer having a…
Methods for improving integration performance of low stress CDO films
Granted: February 5, 2008
Patent Number:
7326444
Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant (<3) and low residual stress without sacrificing important integration properties such as dry etch rate, film stability during wet cleaning, electrical leakage current, and extinction coefficient are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to a chemical precursor having molecules with at least one carbon-carbon triple bond, followed by…
Variable gas conductance control for a process chamber
Granted: January 15, 2008
Patent Number:
7318869
A deposition system in accordance with one embodiment of the present invention includes a process chamber, a stationary pedestal for supporting a substrate in the process chamber, and a moveable shield forming at least a portion of an enclosure defining the process chamber. Motion of the shield with respect to the stationary pedestal controls a variable gas conductance path for gases flowing through the process chamber thereby modulating the pressure of the process chamber with respect…
Constant low force wafer carrier for electrochemical mechanical processing and chemical mechanical polishing
Granted: January 8, 2008
Patent Number:
7316602
A carrier head for holding a workpiece during processing of a workpiece surface is provided. The carrier head includes a carrier housing, a base and a pressure member. The base is configured to hold the workpiece and is movable with respect to the carrier housing. The pressure member is between the base and the carrier housing and is configured to induce the base to apply a predetermined force onto the process surface.
Device providing electrical contact to the surface of a semiconductor workpiece during processing
Granted: December 25, 2007
Patent Number:
7311811
Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically…
Method and apparatus for plating and polishing semiconductor substrate
Granted: December 18, 2007
Patent Number:
7309406
The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate and then polishes the same substrate. This is achieved by providing multiple chambers in a single apparatus, where one chamber can be used for plating/depositing the conductive material and another chamber can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electro chemical mechanical…
Method and apparatus for forming an electrical contact with a semiconductor substrate
Granted: December 18, 2007
Patent Number:
7309407
The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An…
Providing electrical contact to the surface of a semiconductor workpiece during processing
Granted: December 18, 2007
Patent Number:
7309413
Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically…
Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface
Granted: November 20, 2007
Patent Number:
7297239
An electrochemical apparatus is provided which deposits material onto or removes material from the surface of a workpiece. The apparatus comprises a polishing pad and a platen which is in turn comprised of a first conductive layer in contact with the polishing pad and coupled to a first potential, a second conductive layer coupled to a second potential, and a first insulating layer disposed between the first and second conductive layers. At least one electrical contact is positioned…
Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition
Granted: November 20, 2007
Patent Number:
7297608
A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then annealed using a high density plasma (HDP) at a temperature under 500° C. in an oxidizing environment. The method includes the following three principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing…
