Reflective coating for electrostatic chucks
Granted: December 26, 2006
Patent Number:
7154731
In one embodiment, an electrostatic chuck includes a body having a top surface facing a wafer and a reflective coating over the top surface. The reflective coating is formed on areas of the top surface that do not contact a wafer so as to not appreciably affect the clamping function of the electrostatic chuck. The reflective coating helps raise the operating temperature of the wafer by reflecting heat radiated from the wafer back onto the wafer. In one embodiment, the reflective coating…
Active rinse shield for electrofill chemical bath and method of use
Granted: December 12, 2006
Patent Number:
7146994
An active rinse shield designed to protect electrofill chemical baths from excessive dilution during rinse sprays on the semiconductor wafer. The shield uses overlapping blades to cover the bath, making a physical barrier between the bath chemistry and the wafer rinse water. The blades are interconnecting ribs that actuate around a common pivot axis. A linear mechanical actuator controls the blade movement, moving the top-most blade, which in turn, moves an adjacent lower blade. Each…
Sequential deposition/anneal film densification method
Granted: December 12, 2006
Patent Number:
7148155
A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The dielectric layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film. The deposition and anneal processes are then repeated until a desired…
ALD of tantalum using a hydride reducing agent
Granted: December 5, 2006
Patent Number:
7144806
An ALD method deposits conformal tantalum-containing material layers on small features of a substrate surface. The method includes the following principal operations: depositing a thin conformal and saturated layer of tantalum-containing precursor over some or all of the substrate surface; using an inert gas or hydrogen plasma to purge the halogen byproducts and unused reactants; reducing the precursor to convert it to a conformal layer of tantalum or tantalum-containing material; using…
High density plasma process for optimum film quality and electrical results
Granted: December 5, 2006
Patent Number:
7144822
A method for plasma processing of semiconductor wafers is provided that reduces plasma-induced damage to the gate dielectric while limiting damage to the wafer from particulates that flake off of the interior surfaces of the reaction chamber. Plasma conditions are maintained in the reaction chamber while the wafer is transferred into the chamber and the plasma process is performed. After the plasma process, while still maintaining plasma conditions, the wafer is cooled to a removal…
Method for reducing tungsten film roughness and improving step coverage
Granted: November 28, 2006
Patent Number:
7141494
A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
Optimal operation of conformal silica deposition reactors
Granted: November 14, 2006
Patent Number:
7135418
Methods of forming conformal films that reduce the amount of metal-containing precursor and/or silicon containing precursor materials required are described. The methods increase the amount of film grown following each dose of metal-containing and/or silicon-containing precursors. The methods may involve introducing multiple doses of the silicon-containing precursor for each dose of the metal-containing precursor and/or re-pressurizing the process chamber during exposure to a dose of the…
Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD)
Granted: October 31, 2006
Patent Number:
7129189
An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film applies a phosphate-doped silicate film using atomic layer deposition (ALD) and rapid surface catalyzed vapor deposition (RVD). The method includes the following four principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially…
Apparatus and method for abrading a workpiece
Granted: October 24, 2006
Patent Number:
7125313
An apparatus for abrading a workpiece comprises a first plate assembly having a first surface for supporting a workpiece and a second plate assembly having a second surface for engaging the workpiece to abrade a portion thereof. A displacement shaft is mounted for movement with respect to the upper and lower plate assemblies and has a first end configured to engage the upper plate assembly. A feedback assembly is coupled to the displacement shaft for moving the displacement shaft to…
Deposition profile modification through process chemistry
Granted: October 17, 2006
Patent Number:
7122485
Disclosed are methods for modifying the topography of HDP CVD films by modifying the composition of the reactive mixture. The methods allow for deposition profile control independent of film deposition rate. They rely on changes in the process chemistry of the HDP CVD system, rather than hardware modifications, to modify the local deposition rates on the wafer. The invention provides methods of modifying the film profile by altering the composition of the reactive gas mixture, in…
Methods for controlling the pressures of adjustable pressure zones of a work piece carrier during chemical mechanical planarization
Granted: October 3, 2006
Patent Number:
7115017
Methods are provided for controlling adjustable pressure zones of a CMP carrier. A method comprises determining a first thickness of a layer on a wafer underlying a first zone of the carrier. A first portion of the layer underlying the first zone is removed. The first zone is configured to exert a first pressure against the second surface of the wafer. A second thickness of the layer underlying the first zone is determined and a target thickness corresponding to a predetermined thickness…
Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus
Granted: September 19, 2006
Patent Number:
7107998
Carbon monoxide gas is provided in a ruthenium-deposition apparatus to clean undesired ruthenium-containing deposits from apparatus surfaces. Carbon monoxide gas is mixed with reactant gases in apparatus tubing and in a ruthenium-deposition reaction chamber to inhibit formation of undesired ruthenium deposits on apparatus surfaces and to remove ruthenium deposits.
Optimal operation of conformal silica deposition reactors
Granted: September 19, 2006
Patent Number:
7109129
Methods of forming conformal films that reduce the amount of metal-containing precursor and/or silicon containing precursor materials required are described. The methods increase the amount of film grown following each dose of metal-containing and/or silicon-containing precursors. The methods may involve introducing multiple doses of the silicon-containing precursor for each dose of the metal-containing precursor and/or re-pressurizing the process chamber during exposure to a dose of the…
Method and apparatus for sealing substrate load port in a high pressure reactor
Granted: September 12, 2006
Patent Number:
7105061
Methods and an apparatus for providing an intrinsically safe chamber door for a processing chamber capable of operating at high pressures are provided. One exemplary apparatus includes a processing chamber for a substrate where the chamber is configured to operate at a positive pressure. The processing chamber includes a port loading slot for providing access for the substrate into and out of the chamber. A chamber door positioned inside the chamber is included. The chamber door is…
Composition and method for electrodeposition of metal on a work piece
Granted: September 12, 2006
Patent Number:
7105082
A composition for electrodeposition of a metal on a work piece, which electrodeposition is conducted at an electrodeposition temperature, is provided. The composition comprises a metal salt, a polymer suppressor having a cloud point, an accelerator and an electrolyte. If the cloud point is greater than the electrodeposition temperature, an anion is also present in an amount sufficient to lower the cloud point of the polymer suppressor to a temperature approximately no greater than the…
Methods and apparatus for controlled-angle wafer positioning
Granted: August 29, 2006
Patent Number:
7097410
The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be…
Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiOfilms
Granted: August 29, 2006
Patent Number:
7097878
A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is thicker, faster growing, shows better gap fill performance and has improved film properties compared to films resulting from silicon precursors with identical alkoxy substituents on silicon. The method includes the following two principal operations: exposing a substrate surface to a metal-containing precursor gas to form a…
Methods for improving the cracking resistance of low-k dielectric materials
Granted: August 22, 2006
Patent Number:
7094713
Methods for improving the mechanical properties of a CDO film are provided. The methods involve, for instance, providing either a dense CDO film or a porous CDO film in which the porogen has been removed followed by curing the CDO film at an elevated temperature using either a UV light treatment, an e-beam treatment, or a plasma treatment such that the curing improves the mechanical toughness of the CDO dielectric film.
Deposition of integrated circuit fabrication materials using a print head
Granted: August 15, 2006
Patent Number:
7091134
In one embodiment, an integrated circuit (IC) fabrication material is dispensed from a print head by dividing its nozzles into several groups, and sequentially allowing each group to fire. The nozzles may be grouped based on the amounts of material they dispense. For example, the nozzles may be grouped by drop volume or drop mass. In one embodiment, an IC fabrication material is dispensed on a substrate by controlling a firing sequence of a nozzle to promote merging of material on the…
Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments
Granted: August 1, 2006
Patent Number:
7083991
Method and apparatus for using a silylating agent after exposure to an oxidizing environment for repairing damage to low-k dielectric films are described. Plasma photoresist removal, or ashing, may damage bonds in the low-k materials, which may lead to a significant increase in the dielectric constant of the materials. The silylating agent may be used to repair damage to the low-k films after the ashing process. Additionally, a curing process using an oxidizing environment may damage…
