ENHANCED PIXEL CELL ARCHITECTURE FOR AN IMAGE SENSOR
Granted: August 29, 2013
Application Number:
20130221194
A backside illuminated pixel array having a buried channel source follower of a pixel cell which is coupled to output an analog signal directly to a bitline as image data. In one embodiment, the buried channel source follower of a pixel cell is coupled to a source follower power line having a line impedance which is less than that of one or more other signal lines for operating that same pixel cell. In another embodiment, a source follower power line has a line impedance which is less…
METHODS OF FORMING VARYING DEPTH TRENCHES IN SEMICONDUCTOR DEVICES
Granted: August 22, 2013
Application Number:
20130217173
A method of forming trenches in a semiconductor device includes forming an etchant barrier layer above a first portion of a semiconductor layer. A first trench is etched in a second portion of the semiconductor layer using a first etchant. The second portion of the semiconductor layer is not disposed underneath the etchant barrier layer. The etchant barrier layer is etched through using a second etchant that does not substantially etch the semiconductor layer. A second trench is etched…
PAD AND CIRCUIT LAYOUT FOR SEMICONDUCTOR DEVICES
Granted: August 22, 2013
Application Number:
20130214375
An apparatus includes an image sensor with a frontside and a backside. The image sensor includes an active circuit region and bonding pads. The active circuit region has a first shape that is substantially rectangular. The substantially rectangular first shape has first chamfered corners. A perimeter of the frontside of the image sensor has a second shape that is substantially rectangular. The second substantially rectangular shape has second chamfered corners. The bonding pads are…
METHOD FOR COMBINING IMAGES
Granted: August 15, 2013
Application Number:
20130208081
A method for combining images includes capturing a first image including a subject from a first camera. A second image is captured from a second camera and the second image includes the subject. First pre-processing functions are applied on the first image to produce a first processed image. The first pre-processing functions include applying a distortion component of a rotation matrix to the first image. The rotation matrix defines a corrected relationship between the first and the…
LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS
Granted: August 15, 2013
Application Number:
20130207212
A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light…
BLACK LEVEL CORRECTION FOR IMAGING PIXELS
Granted: August 15, 2013
Application Number:
20130206959
A technique for obtaining a corrected pixel value is disclosed. The technique includes measuring a first dark current of a dark calibration pixel of a pixel array and measuring a second dark current of an imaging pixel of the pixel array. A dark current ratio is calculated based on the first dark current and the second dark current. An image charge is acquired with the imaging pixel where the image charge is accumulated over a first time period. A charge is acquired with the dark…
PREVENTION OF LIGHT LEAKAGE IN BACKSIDE ILLUMINATED IMAGING SENSORS
Granted: August 8, 2013
Application Number:
20130200396
An apparatus includes a semiconductor layer, a dielectric layer, and a light prevention structure. The semiconductor layer has a front surface and a backside surface. The semiconductor layer includes a light sensing element and a periphery circuit region containing a light emitting element and not containing the light sensing element. The dielectric layer contacts at least a portion of the backside surface of the semiconductor layer. At least a portion of the light prevention structure…
VARIABLE VOLTAGE ROW DRIVER FOR CMOS IMAGE SENSOR
Granted: August 1, 2013
Application Number:
20130193305
An example image sensor includes a plurality of pixels arranged in an array of columns and rows, a row driver, and a control logic circuit. The row driver is coupled to pixels in a row of the array to provide a variable driving voltage to drive transistors included in the pixels of the row. The control logic circuit is coupled to provide one or more control logic signals to the row driver. The row driver adjusts a magnitude of the driving voltage in response to the one or more control…
IMAGE SENSOR WITH INTEGRATED AMBIENT LIGHT DETECTION
Granted: July 25, 2013
Application Number:
20130187027
An image sensor having an image acquisition mode and an ambient light sensing mode includes a pixel array having pixel cells organized into rows and columns for capturing image data and ambient light data. Readout circuitry is coupled via column bit lines to the pixels cells to read out the image data along the column bit lines. An ambient light detection (“ALD”) unit is selectively coupled to the pixel array to readout the ambient light data and to generate an ambient light signal…
IMAGE SENSOR WITH OPTICAL FILTERS HAVING ALTERNATING POLARIZATION FOR 3D IMAGING
Granted: July 25, 2013
Application Number:
20130188023
An image sensor for three-dimensional (“3D”) imaging includes a first, a second, and a third pixel unit, where the second pixel unit is disposed between the first and third pixel units. Optical filters included in the pixel units are disposed on a light incident side of the image sensor to filter polarization-encoded light having a first polarization and a second polarization to photosensing regions of the pixel units. The first pixel unit includes a first optical filter having the…
SHARED TIME OF FLIGHT PIXEL
Granted: July 18, 2013
Application Number:
20130181119
A time of flight pixel includes a photodiode that accumulates charge in response to light incident upon the photodiode. A first transfer transistor is couple between the photodiode and a first charge storage device to selectively transfer charge to the first charge storage device from the photodiode. A second transfer transistor coupled between the photodiode and a second charge storage device to selectively transfer charge to the second charge storage device from the photodiode. An…
IR-CUT FILTER HAVING RED ABSORBING LAYER FOR DIGITAL CAMERA
Granted: June 13, 2013
Application Number:
20130147965
An infrared cut filter may be used with an image sensor to remove infrared light components from image light received from a first side of the infrared cut filter prior to the image light reaching the image sensor to be disposed on a second side of the infrared cut filter. The infrared cut filter includes at least one red absorbing layer and an infrared reflector. The at least one red absorbing layer partially absorbs red light components within the image light. The infrared reflector…
BACKSIDE-ILLUMINATED (BSI) PIXEL INCLUDING LIGHT GUIDE
Granted: June 6, 2013
Application Number:
20130140432
Implementations of a pixel including a substrate having a front side, a back side, and a photosensitive region formed on or near the front side, a dielectric layer formed on the front side, and a metal stack having a bottom side and a top side, the bottom side being on the dielectric layer. A light guide is formed in the dielectric layer and the metal stack and extending from the front side of the substrate to the top side of the metal stack, the light guide having a refractive index…
SEAL RING SUPPORT FOR BACKSIDE ILLUMINATED IMAGE SENSOR
Granted: May 16, 2013
Application Number:
20130122637
A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed…
ANALOG ROW BLACK LEVEL CALIBRATION FOR CMOS IMAGE SENSOR
Granted: May 16, 2013
Application Number:
20130120619
A CMOS image sensor includes an image pixel array, a dark pixel array, data bit liens, reference bit lines, a driver, comparators, and analog-to-digital converter (“ADC”) circuits. The image pixel array generates analog image signals in response to incident light. The dark pixel array generates analog black reference signals for analog black level calibration of the analog image signals. In one embodiment, the data bit lines each coupled to a different column of image pixels of the…
METHOD, APPARATUS AND SYSTEM FOR PROVIDING IMPROVED FULL WELL CAPACITY IN AN IMAGE SENSOR PIXEL
Granted: May 9, 2013
Application Number:
20130113969
Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the…
PAD DESIGN FOR CIRCUIT UNDER PAD IN SEMICONDUCTOR DEVICES
Granted: May 9, 2013
Application Number:
20130113065
Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The…
TRANSISTOR WITH SELF-ALIGNED CHANNEL WIDTH
Granted: April 25, 2013
Application Number:
20130099296
A device includes a transistor including a source and a drain disposed in a substrate and a gate disposed above the substrate. The gate includes a first longitudinal member disposed above the source and the drain and running substantially parallel to a channel of the transistor. The first longitudinal member is disposed over a first junction isolation area. The gate also includes a second longitudinal member disposed above the source and the drain and running substantially parallel to…
PARTIAL BURIED CHANNEL TRANSFER DEVICE FOR IMAGE SENSORS
Granted: April 18, 2013
Application Number:
20130092982
Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively…
MULTIPLE-ROW CONCURRENT READOUT SCHEME FOR HIGH-SPEED CMOS IMAGE SENSOR WITH BACKSIDE ILLUMINATION
Granted: April 11, 2013
Application Number:
20130087683
A system, method and apparatus implementing a multiple-row concurrent readout scheme for high-speed CMOS image sensor with backside illumination are described herein. In one embodiment, the method of operating an image sensor starts acquiring image data within a color pixel array and the image data from a first set of multiple rows in the color pixel array is then concurrently readout. Concurrently reading out the image data from the first set of multiple rows includes concurrently…
