RETARGETING OF A WRITE OPERATION RETRY IN THE EVENT OF A WRITE OPERATION FAILURE
Granted: July 23, 2009
Application Number:
20090187700
Methods and systems are herein disclosed for write operation retry using the data stored and retained in an internal buffer within the non-volatile memory device. By using the data stored in the internal buffer, the systems and method of the present invention eliminate the need to include a dedicated retry buffer at the system level. Thereby, reducing the system cost, minimizing space consumption on a board within the system and, in some instance, limiting the latency attributed to a…
VOLTAGE BOOSTER BY ISOLATION AND DELAYED SEQUENTIAL DISCHARGE
Granted: July 16, 2009
Application Number:
20090180345
Systems and methods for improving efficiency of a voltage booster for read mode operations of memory cells and discharging a boosted supply voltage safely are disclosed. The system contains a plurality of boosting stages coupled in series including a plurality of boosting capacitors, a plurality of isolators. The isolator can be used to prevent boosting of one capacitor from negatively affecting a charge of the other adjacent capacitor to improve the efficiency of the voltage booster. A…
METHOD FOR PROTECTING DATA AGAINST DIFFERNTIAL FAULT ANALYSIS INVOLVED IN RIVEST, SHAMIR, AND ADLEMAN CRYPTOGRAPHY USING THE CHINESE REMAINDER THEOREM
Granted: July 9, 2009
Application Number:
20090175441
Systems and methods for effectively protecting data against differential fault analysis involved in Rivest, Shamir, and Adleman (“RSA”) cryptography using the Chinese Remainder Theorem (“CRT”) are described herein. A CRT RSA component facilitates modular exponentiation of a received message, and a verification component reconstructs the received message. An exponentiation component performs a first modular exponentiation and a second modular exponentiation of the received…
ARRAYED NEUTRON DETECTOR WITH MULTI SHIELDING ALLOWING FOR DISCRIMINATION BETWEEN RADIATION TYPES
Granted: July 2, 2009
Application Number:
20090166550
Neutron detectors including one or more gamma shields over memory dies and methods of making the neutron detectors are provided. The neutron detectors can contain two or more memory dies, neutron-reactant layers over the two or more memory dies, and one or more gamma shields over at least a portion of or an entire of the two or more memory dies. By containing the gamma shield over the at least a portion of or an entire of the two or more memory dies, the neutron detector can detect and…
RELOCATING DATA IN A MEMORY DEVICE
Granted: July 2, 2009
Application Number:
20090172250
Systems and methods that can facilitate more optimized relocation of data associated with a memory are presented. In addition to a memory controller component, a memory manager component can be employed to increase available processing resources to facilitate more optimal execution of higher level functions. Higher level functions can be delegated to the memory manager component to allow execution of these higher level operations with reduced or no load on the memory controller component…
TRANSLATION MANAGEMENT OF LOGICAL BLOCK ADDRESSES AND PHYSICAL BLOCK ADDRESSES
Granted: July 2, 2009
Application Number:
20090172345
Systems and/or methods that facilitate PBA and LBA translations associated with a memory component(s) are presented. A memory controller component facilitates determining which memory component, erase block, page, and data block contains a PBA in which a desired LBA and/or associated data is stored. The memory controller component facilitates control of performance of calculation functions, table look-up functions, and/or search functions to locate the desired LBA. The memory controller…
COMMAND QUEUING FOR NEXT OPERATIONS OF MEMORY DEVICES
Granted: June 25, 2009
Application Number:
20090165020
Systems and/or methods that facilitate transferring data between a processor component and memory components are presented. A transfer controller component facilitates controlling data transfers in part by receiving respective subsets of data from respective memory components and arranging the respective subsets of data based in part on a desired predefined data order. The processor component generates a transfer map that includes information to facilitate arranging data in a predefined…
ERROR CORRECTION IN FLASH MEMORY ARRAY
Granted: June 25, 2009
Application Number:
20090164836
Systems and/or methods that facilitate that facilitate error correction of data stored in memory components, such as flash memory devices are presented. An optimized correction component can be used to break data into two or more data blocks. The optimized correction component can facilitated creating one or two redundancy blocks that can be associated with the data blocks, wherein data blocks and the redundancy blocks can be assembled into a data stripe that can be stored in three or…
AUTHENTICATED MEMORY AND CONTROLLER SLAVE
Granted: June 25, 2009
Application Number:
20090164789
Systems and methods that can facilitate the utilization of a memory as a slave to a host are presented. The host and memory can provide authentication information to each other and respective rights can be granted based in part on the respective authentication information. The host can determine the available functionality of the memory. The host can activate the desired functionality in the memory and can request memory to perform the desired function(s) with regard to data stored in…
DATA COMMIT ON MULTICYCLE PASS COMPLETE WITHOUT ERROR
Granted: June 25, 2009
Application Number:
20090164750
A system and methodology that can prevent errors during data commit on multicycle pass complete associated with a memory is provided. The system employs a transaction buffer component in the memory that receives and temporarily stores information associated with a transaction. A controller component programs subsets of data to respective memory locations once the entire transaction is completed based on the information stored in the transaction buffer component. Thus, if the transaction…
HIGH PERFORMANCE FLASH CHANNEL INTERFACE
Granted: June 25, 2009
Application Number:
20090164704
Systems and/or methods that facilitate high performance flash channel interface techniques are presented. Integrated error correction code (ECC) engine and buffer sets facilitate bypassing error correction of data being written to or read from memory, such as flash memory, in addition to single ECC mode or multiple ECC mode. The integrated ECC engines and buffers can quickly analyze data, and provide error correction information or correct error, significantly increasing throughput. In…
FLEXIBLE FLASH INTERFACE
Granted: June 25, 2009
Application Number:
20090164703
Systems and methods that can facilitate providing a flexible flash interface component that can accommodate communicating with almost any flash memory component (e.g., Open NAND Flash Interface (ONFI) compliant and ONFI noncompliant flash memory). A micro-operations component can contain one or more micro-operation that can be used to execute commands within the flash interface component. To facilitate a flexible flash interface, the micro-operations can include such commands as, but are…
FREQUENCY DISTRIBUTED FLASH MEMORY ALLOCATION BASED ON FREE PAGE TABLES
Granted: June 25, 2009
Application Number:
20090164702
Systems and/or methods that provide for frequency distributed flash memory allocation are disclosed. The systems and methods determine the rate at which a system address is being written and the current erase cycle state of each data block in the non-volatile memory device and assigns a physical address to the write operation based on the determined system address rate and the current erase state of each data block in the non-volatile system. In this regard, system addresses that are…
EFFICIENT MEMORY HIERARCHY IN SOLID STATE DRIVE DESIGN
Granted: June 25, 2009
Application Number:
20090164700
Systems and methods for improving the performance and reliability of flash memory solid state drive devices are described herein. A flash memory array component stores data. A memory hierarchy component transfers data between the host and the flash memory array component. The memory hierarchy component includes a level one (“L1”) cache coupled to a merge buffer, the flash memory array component, and the host. The merge buffer is coupled to the flash memory array component. The L1…
PHYSICAL BLOCK ADDRESSING OF ELECTRONIC MEMORY DEVICES
Granted: June 25, 2009
Application Number:
20090164696
Systems and/or methods that facilitate accessing data to/from a memory are presented. An electronic memory component can operate with reduced data access times by eliminating/reducing the use of logical block addressing and employing physical block addressing. Data access is thereby directly associated with the physical location of the stored bits and the need to translate between a logical address and the physical address is reduced or eliminated. This can be even more efficient under…
EXTENDING FLASH MEMORY DATA RETENSION VIA REWRITE REFRESH
Granted: June 25, 2009
Application Number:
20090161466
Providing for extended data retention of flash memory devices by program state rewrite is disclosed herein. By way of example, a memory cell or group of memory cells can be evaluated to determine a program state of the cell(s). If the cell(s) is in a program state, as opposed to a natural or non-programmed state, a charge level, voltage level and/or the like can be rewritten to a default level associated with the program state, without erasing the cell(s) first. Accordingly, conventional…
CONTROLLING AC DISTURBANCE WHILE PROGRAMMING
Granted: June 25, 2009
Application Number:
20090161462
A system and methodology that can minimize disturbance during an AC operation associated with a memory, such as, program, read and/or erase, is provided. The system pre-charges all or a desired subset of the bit lines in a memory array to a specified voltage, during an AC operation to facilitate reducing AC disturbances between neighboring cells. A pre-charge voltage can be applied to all bit lines in a block in the memory array, or to bit lines associated with a selected memory cell and…
BIT MAP CONTROL OF ERASE BLOCK DEFECT LIST IN A MEMORY
Granted: June 25, 2009
Application Number:
20090161430
Systems and methods that facilitate bad block management in a memory device that comprises nonvolatile memory are presented. One or more memory blocks of a memory device are each associated with one or more additional, dedicated bits that facilitate indicating whether the associated memory block is defective. These additional bits, called bad block bits, can be stored in a hardware-based storage mechanism within the memory device. Once a defect is detected in a memory block, at least one…
ELECTRONIC DEVICE INCLUDING A SILICON NITRIDE LAYER AND A PROCESS OF FORMING THE SAME
Granted: June 25, 2009
Application Number:
20090159958
An electronic device can include a silicon nitride layer. In an embodiment, the silicon nitride layer can include boron, grains, or both. The silicon nitride layer may be used as part of a charge storage layer within a nonvolatile memory cell within the electronic device. In a particular embodiment, the boron within the silicon nitride layer may be no greater than approximately 9 atomic % of the layer. The boron can be incorporated into the silicon nitride layer as it is being formed.…
ELECTRONIC DEVICES WITH ULTRAVIOLET BLOCKING LAYERS AND PROCESSES OF FORMING THE SAME
Granted: June 25, 2009
Application Number:
20090159321
An electronic device can include a conductive feature and an ultraviolet (“UV”) blocking layer overlying the conductive feature. The electronic device can also include an insulating layer overlying the UV blocking layer. The electronic device can further include a conductive structure extending into an opening within the insulating layer, wherein the conductive structure is electrically connected to the conductive feature. In one aspect, the UV blocking layer lies within 90 nm of the…
