Spansion Patent Grants

Device and method for preventing lost synchronization

Granted: July 8, 2014
Patent Number: 8775853
A method for synchronizing two connection nodes by a reception node of the connection nodes with a clock data recovery circuit that generates a synchronization clock from input data. The method includes performing a synchronization process to establish synchronization between the connection nodes based on the synchronization clock, performing a connection failure process when the synchronization is not established when a first time elapses after receiving the input data, correcting the…

Error correction scheme for non-volatile memory

Granted: July 1, 2014
Patent Number: 8769377
Error correcting systems, methods, and devices for non-volatile memory are disclosed. In one embodiment, a non-volatile memory device comprises a data area for storing data, an error correcting code generation section for generating an error correcting code in response to receipt of a code generation command, and an error correcting code area for storing the error correcting code. The non-volatile memory device further comprises a detector circuit for detecting the generating of the…

Semiconductor device and method for manufacturing the same

Granted: July 1, 2014
Patent Number: 8765529
A semiconductor device includes a semiconductor chip, a connection electrode including a first land electrode electrically coupled with the semiconductor chip, and a through electrode formed on an upper surface of the first land electrode to be electrically coupled with the first land electrode using a stud bump, and a sealing resin, through which the connection electrode passes, for sealing the semiconductor chip.

Memory device with source-side sensing

Granted: June 24, 2014
Patent Number: 8760930
A source-sensing configuration for non-volatile memory devices to simultaneously read 2 bits in two different memory cells sharing a same word line is disclosed. In a first cell arrangement, a drain of a first read cell is biased and its source and that of two adjacent cells in a direction towards the second read cell are connected through source bit lines to a source sense amplifier. In a second cell arrangement, the drain of the second read cell is biased and its source and that of its…

Linear drop-out regulator circuit

Granted: June 24, 2014
Patent Number: 8760133
According to one aspect of the embodiment, a linear regulator circuit includes an output transistor outputting an output current based on a input voltage, an error amplifier outputting a control signal based on an electric potential difference between an output voltage based on the output current and a reference voltage, a buffer circuit coupled between the error amplifier and the output transistor, and a drive capability adjustment circuit adjusting a load drive capability of the buffer…

System and method for reducing cross-coupling noise between charge storage elements in a semiconductor device

Granted: June 24, 2014
Patent Number: 8759894
A memory device is provided including a substrate. A first dielectric layer is formed over the substrate. An isolation trench is formed in a portion of the substrate and the first dielectric layer. At least two charge storage elements are formed over the first dielectric layer on opposite sides of the isolation trench. A second dielectric layer is formed over the at least two charge storage elements. A control gate layer is formed over the second dielectric layer, where the isolation…

Heat dissipation methods and structures for semiconductor device

Granted: June 24, 2014
Patent Number: 8759157
A semiconductor device with efficient heat dissipating structures is disclosed. The semiconductor device includes a first semiconductor chip that is flip-chip mounted on a first substrate, a heat absorption portion that is formed between the first semiconductor chip and the first substrate, an outer connection portion that connects the first semiconductor chip to an external device and a heat conduction portion formed between the heat absorption portion and the outer connection portion…

Mitigate flash write latency and bandwidth limitation with a sector-based write activity log

Granted: June 17, 2014
Patent Number: 8756376
A method of operating a memory system is provided. The method includes a controller that regulates read and write access to one or more FLASH memory devices that are employed for random access memory applications. A buffer component operates in conjunction with the controller to regulate read and write access to the one or more FLASH devices. Wear leveling components along with read and write processing components are provided to facilitate efficient operations of the FLASH memory…

Flash memory devices and methods for fabricating same

Granted: June 10, 2014
Patent Number: 8748972
Flash memory devices and methods for fabricating the same are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack and a first impurity doped region is formed within the substrate underlying the trench. The trench is filled at least…

Semiconductor device having chip mounted on an interposer

Granted: June 10, 2014
Patent Number: 8749039
A semiconductor device 100 includes: a first semiconductor package 10; a first interposer 12 having an upper surface on which the first semiconductor package 10 is mounted; a first molding resin 14 that is provided on the upper surface of the first interposer 12 and seals the first semiconductor package 10; a second semiconductor package 20 mounted on an upper surface of the first molding resin 14; a second interposer 22 on which the second semiconductor package 20 is mounted by flip…

Methods and structures for discharging plasma formed during the fabrication of semiconductor device

Granted: June 10, 2014
Patent Number: 8749012
Methods and structures for discharging plasma formed during the fabrication of semiconductor device are disclosed. The semiconductor device includes a wordline, a common ground line and a fuse structure for electrically coupling the wordline and the common ground line until a break signal is applied via the fuse structure.

Charge storage device for detecting alpha particles

Granted: June 10, 2014
Patent Number: 8748800
Systems and methods are described herein for detecting particles emitted by nuclear material. The systems comprise one or more semiconductor devices for detecting particles emitted from nuclear material. The semiconductor devices can comprise a charge storage element comprising several layers. A non-conductive charge storage layer enveloped on top and bottom by dielectric layers is mounted on a substrate. At least one top semiconductor layer can be placed on top of the top dielectric…

Integrated circuit, debugging circuit, and debugging command control method

Granted: June 3, 2014
Patent Number: 8745446
An integrated circuit includes a bus; a processing unit configured to execute a user program; and a debugging circuit connected to the bus, the debugging circuit transferring a command in a command register to the processing unit via the bus in response to a command transfer request from the processing unit, wherein, when the processing unit halts the execution of the user program and makes a request for the command transfer request to the debugging circuit, the debugging circuit makes a…

Flash memory usability enhancements in main memory application

Granted: June 3, 2014
Patent Number: 8745311
A memory system is provided. The system includes an operating system kernel that regulates read and write access to one or more FLASH memory devices that are employed for random access memory applications. A buffer component operates in conjunction with the kernel to regulate read and write access to the one or more FLASH devices.

Charging circuit

Granted: June 3, 2014
Patent Number: 8742730
A charging circuit that prevents a system abnormality caused by removal of a battery. The charging circuit includes a constant voltage charge controller which detects charge voltage and performs a constant voltage charging operation. A constant current charge controller detects charge current and performs a constant current charging operation. A controller controls the constant voltage charge controller to perform the constant voltage charging operation during a period from when the…

Sonos memory cells having non-uniform tunnel oxide and methods for fabricating same

Granted: June 3, 2014
Patent Number: 8742496
Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is…

Flash memory cells having trenched storage elements

Granted: June 3, 2014
Patent Number: 8742486
An embodiment of the present invention is directed to a memory cell. The memory cell includes a first trench formed in a semiconductor substrate and a second trench formed in said semiconductor substrate adjacent to said first trench. The first trench and the second trench each define a first side wall and a second sidewall respectively. The memory cell further includes a first storage element formed on the first sidewall of the first trench and a second storage element formed on the…

Operating system based DRAM/FLASH management scheme

Granted: May 27, 2014
Patent Number: 8738840
A memory system is provided. The system includes an operating system kernel that regulates read and write access to one or more FLASH memory devices that are employed for random access memory applications. A buffer component operates in conjunction with the kernel to regulate read and write access to the one or more FLASH devices.

High ultraviolet light absorbance silicon oxynitride film for improved flash memory device performance

Granted: May 27, 2014
Patent Number: 8735960
An ultraviolet light absorbent silicon oxynitride layer overlies a memory cell including a pair of source/drains, a gate insulator, a floating gate, a dielectric layer, and a control gate. A conductor is disposed through the silicon oxynitride layer for electrical connection to the control gate, and another conductor is disposed through the silicon oxynitride layer for electrical connection to a source/drain.

System and method for accessing memory

Granted: May 20, 2014
Patent Number: 8732360
A storage system and method for storing information in memory nodes. The storage or memory nodes include a communication buffer. Flow of information to the storage nodes is controlled based upon constraints on the communication buffer. In one embodiment, communications between a master controller and a storage node have a determined maximum latency.