Constant on-time switching regulator for zero ESR output capacitor without output voltage offset
Granted: August 21, 2018
Patent Number:
10056822
A control circuit for a switching regulator implementing a fixed frequency constant on-time control scheme incorporates a reference voltage generator to generate a reference voltage ramp that varies over substantially the entire switching period. In one embodiment, the reference voltage increases from an initial voltage value at the start of each switching period towards the end of the switching period and is reset to the initial voltage value at the end of each switching period. The…
Composite masking self-aligned trench MOSFET
Granted: August 21, 2018
Patent Number:
10056461
Aspects of the present disclosure discloses a method for fabricating a trench MOSFET device comprising simultaneously forming a narrow trench and a wide trench into a semiconductor substrate using a mask to defines the narrow trench and the wide trench, forming an insulating layer over the semiconductor substrate with a first portion that fills up the narrow trench and a second portion that partially fills the wide trench, removing the second portion from the wide trench completely and…
Methods for fabricating anode shorted field stop insulated gate bipolar transistor
Granted: August 14, 2018
Patent Number:
10050134
A method for fabricating an anode-shorted field stop insulated gate bipolar transistor (IGBT) comprises selectively forming first and second semiconductor implant regions of opposite conductivity types. A field stop layer of a second conductivity type can be grown onto or implanted into the substrate. An epitaxial layer can be grown on the substrate or on the field stop layer. One or more insulated gate bipolar transistors (IGBT) component cells are formed within the epitaxial layer.
Hybrid packaged lead frame based multi-chip semiconductor device with multiple interconnecting structures
Granted: August 7, 2018
Patent Number:
10043736
A hybrid packaging multi-chip semiconductor device comprises a lead frame unit, a first semiconductor chip, a second semiconductor chip, a first interconnecting structure and a second interconnecting structure, wherein the first semiconductor chip is attached on a first die paddle and the second semiconductor chip is flipped and attached on a third pin and a second die paddle, the first interconnecting structure electrically connecting a first electrode at a front surface of the first…
Termination structure for gallium nitride Schottky diode
Granted: July 31, 2018
Patent Number:
10038106
A termination structure for a nitride-based Schottky diode includes a guard ring formed by an epitaxially grown P-type nitride-based compound semiconductor layer and dielectric field plates formed on the guard ring. The termination structure is formed at the edge of the anode electrode of the Schottky diode and has the effect of reducing electric field crowding at the anode electrode edge, especially when the Schottky diode is reverse biased. In one embodiment, the P-type epitaxial layer…
Cascoded high voltage junction field effect transistor
Granted: July 31, 2018
Patent Number:
10038082
A cascoded junction field transistor (JFET) device comprises a first stage high voltage JFET cascoded to a second stage low voltage JFET wherein one of the first and second stages JFET is connected to a drain electrode of another JFET stage.
Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
Granted: July 31, 2018
Patent Number:
10038062
A vertical TVS (VTVS) circuit includes a semiconductor substrate for supporting the VTVS device thereon having a heavily doped layer extending to the bottom of substrate. Deep trenches are provided for isolation between multi-channel VTVS. Trench gates are also provided for increasing the capacitance of VTVS with integrated EMI filter.
Trench MOSFET device and the preparation method thereof
Granted: July 24, 2018
Patent Number:
10032728
A trench-type metal-oxide-semiconductor field-effect transistor (MOSFET) device and a fabrication method are disclosed. The trench MOSFET device comprises a semiconductor substrate of a first conductivity type. The semiconductor substrate has a plurality of first trenches arranged side by side in a first preset area of the semiconductor substrate extending along a first direction and a plurality of second trenches arranged side by side in a second preset area of the semiconductor…
Vertical DMOS transistor
Granted: July 24, 2018
Patent Number:
10032900
A transistor includes a semiconductor body; a body region of a first conductivity type formed in the semiconductor body; a gate electrode formed partially overlapping the body region and insulated from the semiconductor body by a gate dielectric layer; a source region of a second conductivity type formed in the body region on a first side of the gate electrode; a trench formed in the semiconductor body on a second side of the gate electrode, the trench being lined with a sidewall…
Semiconductor device with field threshold MOSFET for high voltage termination
Granted: July 24, 2018
Patent Number:
10032861
This invention discloses a semiconductor power device disposed in a semiconductor substrate comprising a lightly doped layer formed on a heavily doped layer and having an active cell area and an edge termination area. The edge termination area comprises a plurality P-channel MOSFETs. By connecting the gate to the drain electrode, the P-channel MOSFET transistors formed on the edge termination are sequentially turned on when the applied voltage is equal to or greater than the threshold…
Robust semiconductor power devices with design to protect transistor cells with slower switching speed
Granted: July 24, 2018
Patent Number:
10032584
This invention discloses a power switch that includes a fast-switch semiconductor power device and a slow-switch semiconductor power device controllable to turn on and off a current transmitting therethrough. The slow-switch semiconductor power device further includes a ballasting resistor for increasing a device robustness of the slow switch semiconductor power device. In an exemplary embodiment, the fast-switch semiconductor power device includes a fast switch metal oxide semiconductor…
Normally off gallium nitride field effect transistors (FET)
Granted: July 10, 2018
Patent Number:
10020389
A heterostructure field effect transistor (HFET) gallium nitride (GaN) semiconductor power device comprises a hetero-junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer. The power device further comprises a source electrode and a drain electrode disposed on two opposite sides of a gate electrode disposed on top of the hetero-junction…
Power device with high aspect ratio trench contacts and submicron pitches between trenches
Granted: July 10, 2018
Patent Number:
10020380
This invention discloses a semiconductor power device disposed in a semiconductor substrate including an active cell areas and a termination area. The semiconductor power device further comprises a plurality of gate trenches formed at a top portion of the semiconductor substrate in the active cell area wherein each of the gate trenches is partially filled with a conductive gate material with a top portion of the trenches filled by a high density plasma (HDP) insulation layer. The…
Dual channel trench LDMOS transistors with drain superjunction structure integrated therewith
Granted: July 10, 2018
Patent Number:
10020369
A dual channel trench LDMOS transistor includes a semiconductor layer of a first conductivity type formed on a substrate; a first trench formed in the semiconductor layer where a trench gate is formed in an upper portion of the first trench; a body region of the second conductivity type formed in the semiconductor layer adjacent the first trench; a source region of the first conductivity type formed in the body region and adjacent the first trench; a planar gate overlying the body…
Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
Granted: July 3, 2018
Patent Number:
10014381
This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench…
Top drain LDMOS
Granted: June 26, 2018
Patent Number:
10008598
In an embodiment, this invention discloses a top-drain lateral diffusion metal oxide field effect semiconductor (TD-LDMOS) device supported on a semiconductor substrate. The TD-LDMOS includes a source electrode disposed on a bottom surface of the semiconductor substrate. The TD-LDMOS further includes a source region and a drain region disposed on two opposite sides of a planar gate disposed on a top surface of the semiconductor substrate wherein the source region is encompassed in a body…
MOSFET with integrated schottky diode
Granted: June 26, 2018
Patent Number:
10008579
Schottky structure fabrication includes forming two trenches in a semiconductor material. The trenches are separated from each other by a mesa. Sidewalls and a bottom surface of the trenches are lined with a dielectric material. A conductive material is disposed in the trenches lining the dielectric material on the sidewalls and the bottom surface. The conductive material on the bottom surface of the trenches is removed so that a first portion of conductive material remains on a first…
Forced zero voltage switching flyback converter
Granted: June 12, 2018
Patent Number:
9998021
A flyback converter implements a Forced Zero Voltage Switching (ZVS) timing control by detecting a positive current excursion of the secondary winding current as the synchronous rectifier turn off trigger. The synchronous rectifier switch is turned on near the end of the switching cycle or the on duration is extended to develop a current ripple on the secondary winding current. The control circuit of the flyback converter detects a positive current excursion on the secondary winding…
Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
Granted: June 12, 2018
Patent Number:
9997593
A trench type power semiconductor device with improved breakdown voltage and UIS performance and a method for preparation the device are disclosed. The trench type power semiconductor device includes a first contact hole formed in a mesa in the active area and a second contact hole formed in a mesa in an active to termination intermediate area, where the first contact hole is deeper and wider than the second contact hole. The method comprises the steps of providing a semiconductor…
Lateral super-junction MOSFET device and termination structure
Granted: June 5, 2018
Patent Number:
9991380
A lateral superjunction MOSFET device includes multiple transistor cells connected to a lateral superjunction structure, each transistor cell including a conductive gate finger, a source region finger, a body contact region finger and a drain region finger arranged laterally within each transistor cell. Each of the drain region fingers, the source region fingers and the body contact region fingers is a doped region finger having a termination region at an end of the doped region finger.…
