BIASABLE ELECTROSTATIC CHUCK
Granted: July 11, 2024
Application Number:
20240234108
Exemplary substrate support assemblies may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. The electrostatic chuck body may define a backside gas lumen that extends through a surface of the substrate seat. The assemblies may include a bias electrode coupled with the electrostatic chuck body. The bias electrode may include a plurality of conductive mesas that protrude upward across the substrate seat. The assemblies may include a…
INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE
Granted: July 11, 2024
Application Number:
20240234544
Semiconductor devices (e.g., gate-all-around (GAA) devices), process tools for manufacturing GAA devices and methods of manufacturing GAA devices, and inner spacer liners and inner spacers for GAA devices, are described. The methods comprise forming an inner spacer liner within a superlattice structure formed on a top surface of a semiconductor substrate. The superlattice structure has a plurality of recessed semiconductor material layers (e.g., silicon germanium (SiGe)) and a…
INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE
Granted: July 11, 2024
Application Number:
20240234531
Semiconductor devices (e.g., gate-all-around (GAA) devices), process tools for manufacturing GAA devices and methods of manufacturing GAA devices, and inner spacer liners and inner spacers for GAA devices, are described. The methods comprise performing a chemical vapor deposition (CVD) process to form an amorphous silicon liner and an inner spacer within a superlattice structure formed on a top surface of a semiconductor substrate. The superlattice structure has a plurality of…
CONTACT RESISTANCE REDUCTION BY INTEGRATION OF MOLYBDENUM WITH TITANIUM
Granted: July 11, 2024
Application Number:
20240234209
Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor. The substrate is pre-cleaned. A molybdenum silicide (MoSi) layer is deposited on one or more of the p transistor and the n transistor. A titanium silicide (TiSi)…
MODULAR PRECURSOR DELIVERY AND SPLITTING FOR FAST SWITCHING
Granted: July 11, 2024
Application Number:
20240234167
Exemplary substrate processing systems may include a lid plate. The systems may include a plurality of processing regions. The systems may include at least one splitter. Each splitter may include a top surface and side surfaces. Each splitter may define an inlet and a plurality of outlets. Each inlet and outlet may extend through a side surface. Each splitter may define an inlet lumen that extends from the fluid inlet to a hub. Each splitter may define a plurality of outlet lumens that…
MODIFYING PATTERNED FEATURES USING A DIRECTIONAL ETCH
Granted: July 11, 2024
Application Number:
20240234161
Disclosed herein are approaches for modifying patterned features using a directional etch. In one approach, a method may include providing a stack of layers of a semiconductor device, forming an opening through the stack of layers, the opening defined by a first sidewall and a second sidewall, and delivering ions into the first sidewall in a reactive ion etching process. The ions maybe delivered at a first non-zero angle relative to a perpendicular extending from the substrate, wherein…
SELECTIVE TRENCH MODIFICATION USING DIRECTIONAL ETCH
Granted: July 11, 2024
Application Number:
20240234156
Disclosed herein are approaches for device modification, namely, trench elongation. In one approach, a method may include providing a substrate including a plurality of surface features defining a plurality of trenches, wherein a first trench has a first trench length extending in a first direction, wherein a second trench connected to the first trench has a second trench length extending in a second direction, and wherein the first direction and the second direction are non-parallel.…
DIRECTIONAL SELECTIVE FILL USING HIGH DENSITY PLASMA
Granted: July 11, 2024
Application Number:
20240234131
Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing an oxygen-containing precursor to the processing region,…
DIRECTIONAL SELECTIVE FILL FOR SILICON GAP FILL PROCESSES
Granted: July 11, 2024
Application Number:
20240234128
Exemplary processing methods may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature within the substrate. The methods may include forming plasma effluents of the silicon-containing precursor and the carbon-containing precursor. The methods may include depositing a silicon-and-carbon-containing material on the…
AREA SELECTIVE CARBON-BASED FILM DEPOSITION
Granted: July 11, 2024
Application Number:
20240234127
Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial…
METHOD FOR CREATING A SMOOTH DIAGONAL SURFACE USING A FOCUSED ION BEAM AND AN INNOVATIVE SCANNING STRATEGY
Granted: July 11, 2024
Application Number:
20240234085
A method of milling a diagonal cut in a region of a sample, the method comprising: positioning the sample in a processing chamber having a charged particle beam column; moving the region of the sample under a field of view of the charged particle column; generating a charged particle beam with the charged particle beam column and scanning the charged particle beam over the region of the sample along scan lines arranged parallel to a slope of the diagonal cut; and repeating the generating…
DISCHARGING AN ELECTROSTATIC CHUCK LOCATED WITHIN A VACUUM CHAMBER
Granted: July 11, 2024
Application Number:
20240234078
A device for discharging an electrostatic chuck located within a vacuum chamber, the device includes a plasma distribution unit that is configured to receive plasma from an external plasma source that is located outside the vacuum chamber, and perform a distribution of the plasma within the vacuum chamber that discharges the electrostatic chuck. The device also includes a controller for controlling the distribution of the plasma; wherein the distribution of the plasma occurs during a…
MANAGING MEMORY LEAKAGES OF A SYSTEM FOR EVALUATING MANUFACTURED ITEMS
Granted: July 11, 2024
Application Number:
20240233848
A system for evaluating manufactured items that includes a memory module; an evaluation unit configured to execute instructions related to the evaluating of the manufactured items while applying a group of features; and a memory leakage unit configured to: select a first feature out of the group of features and disable an execution, by the evaluation unit, of instructions associated with the first feature at a presence of a memory leakage event. The first feature has a priority that is…
PROCESS CHAMBER WITH REFLECTOR
Granted: July 11, 2024
Application Number:
20240231042
A reflector and processing chamber having the same are described herein. In one example, a reflector is provided that includes cylindrical body, a cooling channel, and a reflective coating. The cylindrical body has an upper surface and a lower surface. The lower surface has a plurality of concave reflector structures disposed around a centerline of the cylindrical body. The cooling channel disposed in or on the cylindrical body. The reflective coating is disposed on the plurality of…
PHASE RETRIEVAL
Granted: July 11, 2024
Application Number:
20240230530
A method for phase retrieval, the method may include (a) obtaining multiple out-of-focus intensity images of one or more point spread function targets; wherein the out-of-focus intensity images are generated by based on residual collected light signals obtained by a residual collection channel of an optical unit having a numerical aperture that exceeds 0.8; and (b) calculating phase information, based on the multiple out-of-focus intensity images and on a vectorial model of the point…
SYSTEMS AND METHODS FOR SUBSTRATE SUPPORT TEMPERATURE CONTROL
Granted: July 11, 2024
Application Number:
20240229240
Exemplary temperature modulation methods may include delivering a gas through a purge line extending within a substrate support. The gas may be directed to a backside surface of the substrate support opposite a substrate support surface. The purge line may extend along a central axis of a shaft, the shaft being hermetically sealed with the substrate support. The substrate support may be characterized by a center and a circumferential edge. A first end of the purge line may be fixed at a…
IN SITU NUCLEATION FOR NANOCRYSTALLINE DIAMOND FILM DEPOSITION
Granted: July 11, 2024
Application Number:
20240229231
Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.
PLASMA-ENHANCED MOLYBDENUM DEPOSITION
Granted: July 4, 2024
Application Number:
20240218502
Embodiments of the disclosure are directed to methods of depositing a molybdenum film directly on a substrate surface (e.g., a low-? dielectric material) by exposing the substrate surface to a molybdenum-containing precursor and an organosilane reducing agent at a temperature of less than or equal to 450° C. The molybdenum-containing precursor comprises one or more of molybdenum pentachloride (MoCl5), molybdenum dioxide dichloride (MoO2Cl2), molybdenum oxytetrachloride (MoOCl4),…
ELECTROPLATING GOLD PLATING SOLUTION AND USE THEREOF
Granted: July 4, 2024
Application Number:
20240218548
Embodiments of the present invention provide an electroplating gold plating solution and use thereof. The electroplating gold plating solution comprises a gold cyanide salt, a conductive salt, an oxalate, a lead-containing compound, and additives comprising a phenolic compound and/or gelatin. The general formula of the phenolic compound is as shown in the following formula (1): Wherein at least one of R1, R2, R3, R4, R5, and R6 is selected from hydroxyl, and the rest are each…
ELECTROLESS PLATING WITH A FLOATING POTENTIAL
Granted: July 4, 2024
Application Number:
20240218519
Exemplary methods of plating are described. The methods may include applying a floating potential to a plating bath in a plating chamber. The methods further include contacting a patterned substrate with the plating bath in the plating chamber. The patterned substrate includes at least one metal interconnect with a contact surface that is exposed to the plating bath. The metal interconnect is made of a first metal characterized by a first reduction potential. The methods further include…
