Selective molecular layer deposition of organic and hybrid organic-inorganic layers
Granted: January 7, 2025
Patent Number:
12191139
Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.
High resolution advanced OLED sub-pixel circuit and patterning method
Granted: January 7, 2025
Patent Number:
12193280
Embodiments described herein generally relate to a display. In one or more embodiments, a sub-pixel circuit includes at least two anodes disposed over a substrate. Adjacent anodes define a well. Adjacent overhang structures are disposed in the well. The overhang structures have an overhang thickness from the substrate to an upper surface of the overhang structures. The overhang thickness and the anode thickness are substantially equivalent. The overhang structures include overhang…
Controller and control techniques for linear accelerator and ion implanter having linear accelarator
Granted: January 7, 2025
Patent Number:
12193140
An apparatus may include global control module, the global control module including a digital master clock generator and a master waveform generator. The apparatus may also include a plurality of resonator control modules, coupled to the global control module. A given resonator control module of the plurality of resonator control modules may include a synchronization module, having a first input coupled to receive a resonator output voltage pickup signal from a local resonator, a second…
Methods for silicon carbide gate formation
Granted: January 7, 2025
Patent Number:
12191360
A method of forming a gate structure on a substrate with increased charge mobility. In some embodiments, the method may include depositing an amorphous carbon layer on a silicon carbide layer on the substrate to form a capping layer on the silicon carbide layer, annealing the silicon carbide layer at a temperature of greater than approximately 1800 degrees Celsius, forming a hard mask on the silicon carbide layer by patterning the amorphous carbon layer, etching a trench structure of the…
Methods for minimizing feature-to-feature gap fill height variations
Granted: January 7, 2025
Patent Number:
12191200
A method of gap filling a feature on a substrate decreases the feature-to-feature gap fill height variation by using a tungsten halide soak treatment. In some embodiments, the method may include heating a substrate to a temperature of approximately 350 degrees Celsius to approximately 450 degrees Celsius, exposing the substrate to a tungsten halide gas at a process pressure of approximately 5 Torr to approximately 25 Torr, soaking the substrate for a soak time of approximately 5 seconds…
Low resistivity tungsten film and method of manufacture
Granted: January 7, 2025
Patent Number:
12191198
Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.
Actively clamped carrier assembly for processing tools
Granted: January 7, 2025
Patent Number:
12191186
Embodiments of the present disclosure are related to carrier assemblies that can clamp more than one optical device substrates and methods for forming the carrier assemblies. The carrier assembly includes a carrier, one or more substrates, and a mask. The carrier is magnetically coupled to the mask to retain the one or more substrates. The carrier assembly is used for supporting and transporting the one or more substrates during processing. The carrier assembly is also used for masking…
Integrated substrate measurement system to improve manufacturing process performance
Granted: January 7, 2025
Patent Number:
12191176
A process recipe associated with a substrate at a manufacturing system is identified. A first set of measurements for the substrate is obtained from a substrate measurement subsystem. A second set of measurements for the substrate is obtained from one or more sensors of a chamber of the manufacturing system. A determination is made based on the obtained first set of measurements and the obtained second set of measurements of whether to modify the process recipe by at least one of…
Systems and methods for faceplate temperature control
Granted: January 7, 2025
Patent Number:
12191169
Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The processing systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The processing systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of…
Ribbon beam plasma enhanced chemical vapor deposition system for anisotropic deposition of thin films
Granted: January 7, 2025
Patent Number:
12191156
A ribbon beam plasma enhanced chemical vapor deposition (PECVD) system comprising a process chamber containing a platen for supporting a substrate, and a plasma source disposed adjacent the process chamber and adapted to produce free radicals in a plasma chamber, the plasma chamber having an aperture associated therewith for allowing a beam of the free radicals to exit the plasma chamber, wherein the process chamber is maintained at a first pressure and the plasma chamber is maintained…
Process control knob estimation
Granted: January 7, 2025
Patent Number:
12191126
The subject matter of this specification can be implemented in, among other things, methods, systems, computer-readable storage medium. A method can include receiving (i) sensor data indicating a first state of an environment of a processing chamber processing a substrate subsequent to a chamber recovery procedure, and (ii) substrate process data indicating a set of process parameter values associated with performing a substrate processing procedure by the processing chamber having the…
Monolithic modular microwave source with integrated process gas distribution
Granted: January 7, 2025
Patent Number:
12191118
Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a…
Compact low angle ion beam extraction assembly and processing apparatus
Granted: January 7, 2025
Patent Number:
12191117
An extraction assembly may include an extraction plate for placement along a side of a plasma chamber, and having an extraction aperture, elongated along a first direction, and having an aperture height, extending along a second direction, perpendicular to the first direction. The extraction plate defines an inner surface along the extraction aperture, lying in a first plane. A beam blocker is disposed over the extraction aperture, and has an outer surface, disposed in a second plane,…
Dual RF for controllable film deposition
Granted: January 7, 2025
Patent Number:
12191115
A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the…
Systems and methods for optimizing full horizontal scanned beam distance
Granted: January 7, 2025
Patent Number:
12191113
Provided herein are approaches for optimizing a full horizontal scanned beam distance of an accelerator beam. In one approach, a method may include positioning a first Faraday cup along a first side of an intended beam-scan area, positioning a second Faraday cup along a second side of the intended beam-scan area, scanning an ion beam along the first and second sides of the intended beam-scan area, measuring a first beam current of the ion beam at the first Faraday cup and measuring a…
Managing memory leakages of a system for evaluating manufactured items
Granted: January 7, 2025
Patent Number:
12190971
A system for evaluating manufactured items that includes a memory module; an evaluation unit configured to execute instructions related to the evaluating of the manufactured items while applying a group of features; and a memory leakage unit configured to: select a first feature out of the group of features and disable an execution, by the evaluation unit, of instructions associated with the first feature at a presence of a memory leakage event. The first feature has a priority that is…
Method of deep learning-based examination of a semiconductor specimen and system thereof
Granted: December 31, 2024
Patent Number:
12183066
A computerized system and method of training a deep neural network (DNN) is provided. The DNN is trained in a first training cycle using a first training set including first training samples. Each first training sample includes at least one first training image synthetically generated based on design data. Upon receiving a user feedback with respect to the DNN trained using the first training set, a second training cycle is adjusted based on the user feedback by obtaining a second…
Apparatus and methods for controlling ion energy distribution
Granted: December 31, 2024
Patent Number:
12183557
Embodiments of the present disclosure generally relate to apparatus and methods for controlling an ion energy distribution during plasma processing. In an embodiment, the apparatus includes a substrate support that has a body having a substrate electrode for applying a substrate voltage to a substrate, and an edge ring electrode embedded for applying an edge ring voltage to an edge ring. The apparatus further includes a substrate voltage control circuit coupled to the substrate…
Baffle implementation for improving bottom purge gas flow uniformity
Granted: December 31, 2024
Patent Number:
12183553
The present disclosure generally relates to an apparatus for improving azimuthal uniformity of a pressure profile of a processing gas. In one example, a processing chamber includes a lid, sidewalls, and a substrate support defining a processing volume. A bottom bowl, a chamber base, and a wall define a purge volume. The purge volume is disposed beneath the processing volume. The bottom bowl includes a first surface having a first equalizer hole. A passage couples the processing volume to…
High bandwidth architecture for centralized coherent control at the edge of processing tool
Granted: December 31, 2024
Patent Number:
12183548
Embodiments disclosed herein include a processing tool. In an embodiment, the processing tool comprises a power supply, an impedance matching network coupled to the power supply, a cathode, wherein the power supply is configured to supply power through the impedance matching network to the cathode, and a processing module, wherein the processing module is communicatively coupled to the power supply and the impedance matching network.
