Batch curing chamber with gas distribution and individual pumping
Granted: January 21, 2025
Patent Number:
12203171
Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover…
Material deposition apparatus, method of depositing material on a substrate, and material deposition system
Granted: January 21, 2025
Patent Number:
12203164
A material deposition apparatus for depositing an evaporated material onto a substrate is provided. The material deposition apparatus includes a processing drum having a cooler configured to control a substrate temperature during processing of a substrate on the processing drum; a roller guiding the substrate towards the processing drum; a first heater assembly positioned to heat the substrate in a free-span area between the roller and the processing drum; a second heater assembly…
Methods for shaping magnetic fields during semiconductor processing
Granted: January 21, 2025
Patent Number:
12203163
Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate…
Plasma resistant arc preventative coatings for manufacturing equipment components
Granted: January 14, 2025
Patent Number:
12198903
A method includes depositing a first layer of a first material onto a surface of a chamber component of a processing chamber. The first material comprises a polymer, the polymer having a dielectric strength of at least 40 MV/m. The method further includes depositing a second layer of a second material onto the first layer. The second material comprises a first ceramic material impregnated into the first polymer or a second polymer. The method further includes depositing a third layer.…
Physical vapor deposition of piezoelectric films
Granted: January 14, 2025
Patent Number:
12201025
A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and…
Contact over active gate structure
Granted: January 14, 2025
Patent Number:
12198985
Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts through the selective deposition of a fill material.
Substrate support designs for a deposition chamber
Granted: January 14, 2025
Patent Number:
12198967
The present disclosure generally relates to a substrate support that includes a body having a substrate receiving surface, the body comprising a dielectric material. The body also includes a first foil embedded in the body below the substrate receiving surface. The body also includes an electrically conductive mesh embedded in the body below the first foil. The body also includes a center tap structure formed in a bottom surface of the body that is in electrical communication with the…
Substrate support with multiple embedded electrodes
Granted: January 14, 2025
Patent Number:
12198966
A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for…
Systems and methods for depositing low-k dielectric films
Granted: January 14, 2025
Patent Number:
12198925
Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include…
Lamp filament having a pitch gradient and method of making
Granted: January 14, 2025
Patent Number:
12198922
Examples disclosed herein relate to a to a pitch gradient in a lamp filament, and a method of making. In one implementation, a lamp has a bulb filled with a gas. A filament is disposed within the bulb. The filament has a plurality of coils that include a first coil having a first point. The plurality of coils includes a second coil having a second point, and a third coil having a third point. The pitch gradient is defined by a first pitch between the second point and the first point, and…
Roller for location-specific wafer polishing
Granted: January 14, 2025
Patent Number:
12194591
A polishing apparatus includes a support configured to receive and hold a substrate in a plane, a polishing pad affixed to a cylindrical surface of a rotary drum, a first actuator to rotate the drum about a first axis parallel to the plane, a second actuator to bring the polishing pad on the rotary drum into contact with the substrate, and a port for dispensing a polishing liquid to an interface between the polishing pad and the substrate.
Temperature profile measurement and synchronized control on substrate and susceptor in an epitaxy chamber
Granted: January 14, 2025
Patent Number:
12196617
An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite…
Electrochemical deposition systems with enhanced crystallization prevention features
Granted: January 14, 2025
Patent Number:
12195867
Electrochemical deposition systems and methods are described that have enhanced crystallization prevention features. The systems may include a bath vessel operable to hold an electrochemical deposition fluid having a metal salt dissolved in water. The systems may also include sensors including a thermometer and concentration sensor operable to measure characteristics of the electrochemical deposition fluid. The systems further include a computer configured to perform operations that…
Thin layer deposition with plasma pulsing
Granted: January 14, 2025
Patent Number:
12195851
Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.
Modified stacks for 3D NAND
Granted: January 14, 2025
Patent Number:
12195846
Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a…
Conditioning treatment for ALD productivity
Granted: January 14, 2025
Patent Number:
12195845
Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.
Multicathode PVD system for high aspect ratio barrier seed deposition
Granted: January 14, 2025
Patent Number:
12195843
Apparatus and methods for multi-cathode barrier seed deposition for high aspect ratio features in a physical vapor deposition (PVD) process are provided herein. In some embodiments, a PVD chamber includes a pedestal disposed within a processing region of the PVD chamber. The pedestal rotates with a workpiece on it. The PVD chamber includes a lid assembly includes a first target and a second target of a same target material, where a first surface of the first target defines a first zone…
Ion beam sputtering with ion assisted deposition for coatings on chamber components
Granted: January 14, 2025
Patent Number:
12195839
A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 ?m. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.
Liquid dispersion of quantum dot particles
Granted: January 14, 2025
Patent Number:
12195635
Liquid dispersions of quantum dot particles include an acrylic medium having a boiling point in a range of from greater than or equal to 100° C. to less than or equal to 500° C., quantum dot particles dispersed in the acrylic medium, a photo-initiator, and a surface additive. The liquid dispersions of quantum dot particles are useful as stable liquid formulations that resist gelling for spin-coating and ink-jet printing of color conversion layers in the manufacture of LED and micro-LED…
Cathode exchange mechanism to improve preventative maintenance time for cluster system
Granted: January 14, 2025
Patent Number:
12195314
A method and apparatus for lifting a process station from a processing module is described herein. The apparatus includes a lift assembly disposed on the processing module, a lift cage, and one or more guide pins. The lift assembly is disposed to be capable of reaching each of the process stations disposed within the processing module. The lift assembly is used for replacement and maintenance of the process stations and further enables the automated removal and placement of the process…
