Applied Materials Patent Grants

Selective deposition of carbon on photoresist layer for lithography applications

Granted: March 11, 2025
Patent Number: 12249509
A method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing un-irradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer,…

Remote plasma cleaning of chambers for electronics manufacturing systems

Granted: March 11, 2025
Patent Number: 12249494
A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.

Optical device improvement

Granted: March 11, 2025
Patent Number: 12249489
A method of processing an optical device is provided, including: positioning an optical device on a substrate support in an interior volume of a process chamber, the optical device including an optical device substrate and a plurality of optical device structures formed over the optical device substrate, each optical device structure including a bulk region formed of silicon carbide and one or more surface regions formed of silicon oxycarbide. The method further includes providing one or…

Plasma shaper to control ion flux distribution of plasma source

Granted: March 11, 2025
Patent Number: 12249488
Provided herein are approaches for providing a more uniform ion flux and ion angular distribution across a wafer to minimize etch yield loss resulting from etch profile variations. In some embodiments, a system may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, wherein the plasma source comprises a plasma shaper extending into the plasma chamber from a wall of the chamber housing. The plasma shaper may include a shaper wall…

Universal metrology file, protocol, and process for maskless lithography systems

Granted: March 11, 2025
Patent Number: 12248254
Embodiments of the present disclosure relate to a system, a software application, and a method of a lithography process to update one or more of a mask pattern, maskless lithography device parameters, lithography process parameters utilizing a file readable by each of the components of a lithography environment. The file readable by each of the components of a lithography environment stores and shares textual data and facilitates communication between of the components of a lithography…

Patterned heater pedestal with groove extensions

Granted: March 11, 2025
Patent Number: D1066620

Process chamber pumping liner

Granted: March 11, 2025
Patent Number: D1066440

Baffle for anti-rotation process kit for substrate processing chamber

Granted: March 11, 2025
Patent Number: D1066275

Micro-LED displays to reduce subpixel crosstalk

Granted: March 4, 2025
Patent Number: 12243864
A display screen includes a backplane, an array of light-emitting diodes electrically integrated with the backplane, the array of light-emitting diodes configured to emit UV light in a first wavelength range, and a plurality of isolation walls formed on the backplane between adjacent light-emitting diodes of the array of light-emitting diodes with the isolation walls spaced apart from the light-emitting diodes and extending above the light-emitting diodes. The plurality of isolation…

Conformal oxidation for gate all around nanosheet I/O device

Granted: March 4, 2025
Patent Number: 12243941
Horizontal gate-all-around devices and methods of manufacturing the same are described. The hGAA devices comprise an oxidize layer on a semiconductor material between source regions and drain regions of the device. The method includes radical plasma oxidation (RPO) of semiconductor material layers between source regions and drain regions of an electronic device.

Impurity removal in doped ALD tantalum nitride

Granted: March 4, 2025
Patent Number: 12243774
Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

Detection and analysis of substrate support and pre-heat ring in a process chamber via imaging

Granted: March 4, 2025
Patent Number: 12243761
An apparatus, method, and system for identifying and obtaining information related to a substrate support and/or a pre-heat ring in a process chamber via imaging and image processing. In an embodiment, a substrate support is provided. The substrate support generally includes a top surface configured to receive a substrate in a process chamber and a marking feature disposed on the top surface of the substrate support, the marking feature configured to be detectable by an imaging apparatus…

Temperature controlled substrate support assembly

Granted: March 4, 2025
Patent Number: 12243756
Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heater assembly. The substrate support assembly comprises an upper surface and a lower surface; one or more main resistive heaters disposed in the substrate support; and a plurality of heaters in column with the main resistive heaters and disposed in the substrate support. A quantity of the heaters is an order of…

Overlaying on locally dispositioned patterns by ML based dynamic digital corrections (ML-DDC)

Granted: March 4, 2025
Patent Number: 12242789
Systems and methods disclosed are generally related to masklessly developing connections between a chip-group and a design connection point on a substrate. In placement of the chip-group on the substrate, according to certain embodiments the chip-group may be dispositioned relative to an expected position per a substrate layout design, causing a connection misalignment with the design connection point. According to certain embodiments, a machine learning (ML) model is trained on…

Methods and mechanisms for generating a data collection plan for a semiconductor manufacturing system

Granted: March 4, 2025
Patent Number: 12242237
A method includes initiating a connection with a semiconductor manufacturing system. The method further includes generating a set of tool data items associated with the semiconductor manufacturing system. The method further includes providing a graphical user interface (GUI) presenting the set of tool data items associated with the semiconductor manufacturing system and receiving and via the GUI, user input selecting one or more of the tool data items. The method further includes adding…

Methods for increasing the density of high-index nanoimprint lithography films

Granted: March 4, 2025
Patent Number: 12242186
Embodiments of the present disclosure generally relate to densified nanoimprint films and processes for making these densified nanoimprint films, as well as optical devices containing the densified nanoimprint films. In one or more embodiments, a densified nanoimprint film contains a base nanoimprint film and a metal oxide disposed on the base nanoimprint film and in between the nanoparticles. The base nanoimprint film contains nanoparticles, where the nanoparticles contain titanium…

Constant headspace ampoule

Granted: March 4, 2025
Patent Number: 12241594
Ampoules including a housing, a lid and a floating structure are described. The floating structure includes a float with a volume determined to displace a predetermined volume of liquid within the ampoule. An outlet channel extends from the top surface of the float. A baffle is positioned along the length of the outlet channel and creates a saturation zone between the baffle and the float.

Cleaning system for polishing liquid delivery arm

Granted: March 4, 2025
Patent Number: 12240078
A polishing assembly includes a rotatable platen to support a polishing pad, a polishing liquid delivery arm having an enclosure open at a bottom thereof and one or more ports to deliver a polishing liquid and a cleaning fluid downwardly through an interior space of the enclosure onto the polishing pad, and a delivery arm cleaning tool removably attached to the polishing liquid delivery arm, the cleaning tool extending below the delivery arm and having a delivery arm-facing surface…

Etch feedback for control of upstream process

Granted: February 25, 2025
Patent Number: 12237158
A substrate processing system comprises an etch chamber configured to perform an etch process on a substrate, the etch chamber comprising an optical sensor to generate one or more optical measurements of a film on the substrate during and/or after the etch process. The system further comprises a computing device operatively connected to the etch chamber, wherein the computing device is to: receive the one or more optical measurements of the film; determine, for each optical measurement…

On-board cleaning of tooling parts in hybrid bonding tool

Granted: February 25, 2025
Patent Number: 12237186
Methods and apparatus for cleaning tooling parts in a substrate processing tool are provided herein. In some embodiments, a method of cleaning tooling parts in a substrate processing tool includes placing one or more dirty tools on a holder in a bonding chamber of a multi-chamber processing tool; transferring the holder from the bonding chamber to a cleaning chamber of the multi-chamber processing tool; cleaning the one or more dirty tools in the cleaning chamber to produce one or more…