Methods and mechanisms for preventing fluctuation in machine-learning model performance
Granted: March 25, 2025
Patent Number:
12259719
An electronic device manufacturing system configured to receive, by a processor, input data reflecting a feature related to a manufacturing process of a substrate. The manufacturing system is further configured to generate a characteristic sequence defining a relationship between at least two manufacturing parameters, and determine a relationship between one or more variables related to the feature and the characteristic sequence. The manufacturing system is further configured to…
Monolithic complementary field-effect transistors having carbon-doped release layers
Granted: March 25, 2025
Patent Number:
12262559
Embodiments of the disclosure advantageously provide semiconductor devices CFET in particular and methods of manufacturing such devices having a fully strained superlattice structure with channel layers that are substantially free of defects and release layers having a reduced selective removal rate. The CFET described herein comprise a vertically stacked superlattice structure on a substrate, the vertically stacked superlattice structure comprising: a first hGAA structure on the…
Transistor devices with multi-layer interlayer dielectric structures
Granted: March 25, 2025
Patent Number:
12261226
A transistor device includes a channel region, a first source/drain region adjacent to a first end of the channel region and a second source/drain region adjacent to a second end of the channel region, a gate structure disposed on the channel region, the first source/drain region and the second source/drain region, and an interlayer dielectric (ILD) structure disposed on the gate structure. The ILD structure includes a first dielectric layer including a first set of sublayers. The first…
Spot heating by moving a beam with horizontal rotary motion
Granted: March 25, 2025
Patent Number:
12261062
Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.
Selective etch of a substrate
Granted: March 25, 2025
Patent Number:
12261049
Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching…
Doping techniques
Granted: March 25, 2025
Patent Number:
12261047
A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.
Method of linearized film oxidation growth
Granted: March 25, 2025
Patent Number:
12261039
Methods of forming an oxide layer over a semiconductor substrate are provided. The method includes forming a first oxide containing portion of the oxide layer over a semiconductor substrate at a first growth rate by exposing the substrate to a first gas mixture having a first oxygen percentage at a first temperature. A second oxide containing portion is formed over the substrate at a second growth rate by exposing the substrate to a second gas mixture having a second oxygen percentage at…
Tunability of dopant concentration in thin hafnium oxide films
Granted: March 25, 2025
Patent Number:
12261037
Methods of depositing thin films of hafnium oxide possessing strong ferroelectric properties are described. A hafnium oxide monolayer is formed in a first process cycle comprising sequential exposure of a substrate to a hafnium precursor, purge gas, first oxidant and purge gas. A doped hafnium oxide monolayer is formed in a second process cycle comprising sequential exposure of the substrate to a hafnium precursor, purge gas, dopant precursor, purge gas, second oxidant and purge gas.…
Voltage pulse time-domain multiplexing
Granted: March 25, 2025
Patent Number:
12261019
Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source circuitry, a first switch coupled between the voltage source circuitry and a first output node of the waveform generator, the first output node being configured to be coupled to a chamber, and a second switch coupled between the first…
Machine learning based examination of a semiconductor specimen and training thereof
Granted: March 25, 2025
Patent Number:
12260543
There is provided a system and method of runtime examination of a semiconductor specimen. The method includes obtaining a runtime image representative of an inspection area of the specimen, the runtime image having a relatively low signal-to-noise ratio (SNR); and processing the runtime image using a machine learning (ML) model to obtain examination data specific for a given examination application, wherein the ML model is previously trained for the given examination application using…
Machine vision as input to a CMP process control algorithm
Granted: March 25, 2025
Patent Number:
12257665
During chemical mechanical polishing of a substrate, a signal value that depends on a thickness of a layer in a measurement spot on a substrate undergoing polishing is determined by a first in-situ monitoring system. An image of at least the measurement spot of the substrate is generated by a second in-situ imaging system. Machine vision processing, e.g., a convolutional neural network, is used to determine a characterizing value for the measurement spot based on the image. Then a…
Controlling chemical mechanical polishing pad stiffness by adjusting wetting in the backing layer
Granted: March 25, 2025
Patent Number:
12257664
A polishing pad for a chemical mechanical polishing apparatus includes a polishing layer having a polishing surface and a backing layer formed of a fluid-permeable material. The backing layer includes a lower surface configured to be secured to a platen and an upper surface secured to the polishing layer, wherein the lower surface and upper surface are sealed. A first seal circumferentially seals an edge of the backing layer, and a second seal seals and separates the backing layer into a…
Showerhead with embedded nut
Granted: March 25, 2025
Patent Number:
12257592
A showerhead with an embedded nut is disclosed. The showerhead comprises an embedded nut within a cavity. The nut may be engaged by a bolt through an opening in the cavity to support the showerhead. The apparatus allows for the support of the showerhead without the potential for metal contamination.
Multi-level RF pulse monitoring and RF pulsing parameter optimization at a manufacturing system
Granted: March 18, 2025
Patent Number:
12253476
Methods and systems for RF pulse monitoring and RF pulsing parameter optimization at a manufacturing system are provided. Sensor data is received from one or more sensors that indicates an RF pulse waveform detected within the processing chamber. One or more RF signal characteristics are identified in the detected RF pulse waveform. Each identified RF signal characteristic corresponds to at least one RF signal pulse of the RF signal pulsing within the processing chamber. A determination…
Robot apparatus, systems, and methods for transporting substrates in electronic device manufacturing
Granted: March 18, 2025
Patent Number:
12255089
Electronic device manufacturing systems, robot apparatus and associated methods are described. The robot apparatus includes an arm having an inboard end and an outboard end, the inboard end is configured to rotate about a shoulder axis; a first forearm is configured for independent rotation relative to the arm about an elbow axis at the outboard end of the arm; a first wrist member is configured for independent rotation relative the first forearm about a first wrist axis at a distal end…
Support device for supporting a substrate, method of processing a substrate and semiconductor substrate
Granted: March 18, 2025
Patent Number:
12255088
A support device includes a substrate receiving region. The support device includes a support body shaped as a pattern having an array of openings. The support body is a sparse structure wherein a joint area of the openings of the array of openings is 40% or more of the area of the substrate receiving region. The support body includes one or more suction openings configured to be in fluid communication with a vacuum source arrangement.
Method for depositing layers directly adjacent uncovered vias or contact holes
Granted: March 18, 2025
Patent Number:
12255067
Disclosed are approaches for forming semiconductor device layers. One method may include forming a plurality of openings in a semiconductor structure, and forming a film layer atop the semiconductor structure by delivering a material at a non-zero angle relative to a normal extending perpendicular from an upper surface of the semiconductor structure. The film layer may be formed along the upper surface of the semiconductor structure without being formed along a sidewall of each opening…
Integrated cleaning process for substrate etching
Granted: March 18, 2025
Patent Number:
12255055
A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. One or more layers on a substrate electrostatically secured to an electrostatic chuck within a chamber of the etch reactor is etched using a first plasma, causing an etchant byproduct to be generated. A portion of the one or more layers are covered by a photoresist. After the etching is complete, a second plasma is provided into the chamber…
Multi-shape voltage pulse trains for uniformity and etch profile tuning
Granted: March 18, 2025
Patent Number:
12255051
Embodiments of the disclosure provided herein include a method for processing a substrate in a plasma processing system. The method includes receiving a first synchronization waveform signal from a controller, delivering a first burst of first voltage pulses to an electrode assembly after receiving a first portion of the first synchronization waveform signal, wherein at least one first parameter of the first voltage pulses is set to a first value based on a first waveform parameter…
Reducing backscattered electron induced errors
Granted: March 18, 2025
Patent Number:
12254602
A method for improving a quality of a secondary electron image of a region of a sample, the method may include obtaining a backscattered electron (BSE) image of the region and a secondary electron (SE) image of the region; wherein the BSE image and the SE image are generated by scanning of the region with an electron beam; processing the BSE image and the SE image to provide a processed BSE image and a processed SE image; and generating a BSE compensated SE image, wherein the generating…
