Integrated Silicon Solution Profile

Integrated Silicon Solution Patent Grants

Signal synchronization adjustment method and signal synchronization adjustment circuit

Patent Number 12119041 - October 15, 2024

The present invention relates to a signal synchronization adjustment method and a signal synchronization adjustment circuit, for applying to…

Precessional spin current structure with non-magnetic insertion layer for MRAM

Patent Number 12075706 - August 27, 2024

A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved…

Method for manufacturing a magnetic random-access memory device using post pillar formation annealing

Patent Number 12069957 - August 20, 2024

A method for manufacturing a magnetic memory array provides back end of line annealing for associated processing circuitry without causing…

Three dimensional perpendicular magnetic tunnel junction with thin film transistor array

Patent Number 12069964 - August 20, 2024

A method for manufacturing a magnetic random access memory array incudes forming a source region within a surface of a substrate, forming an…

Multi terminal device stack systems and methods

Patent Number 12029045 - July 2, 2024

Embodiments of the present invention include multiple independent terminals for a plurality of devices in a stack configuration within a…

Integrated Silicon Solution Patent Applications

METHOD FOR IMPROVING SENSING MARGIN OF RESISTIVE MEMORY

Application Number 20150348624 - December 3, 2015

A method in a resistive memory device includes configuring two or more memory cells in a column of the array sharing the same bit line and the…

DRAM ERROR CORRECTION EVENT NOTIFICATION

Application Number 20150331745 - November 19, 2015

A method in a memory device implementing error correction includes setting an error correction event register to a first value; assessing a…

FLASH MEMORY DEVICE WITH SENSE-AMPLIFIER-BYPASSED TRIM DATA READ

Application Number 20150279473 - October 1, 2015

A non-volatile memory device includes a two-dimensional array of non-volatile memory cells where a first portion of memory cells being…

REFERENCE CURRENT CIRCUIT WITH TEMPERATURE COEFFICIENT CORRECTION

Application Number 20150270006 - September 24, 2015

A flash memory device uses a pair of parallely connected NMOS transistors with different voltage ratings to generate the reference current for…

ABRIDGED ERASE VERIFY METHOD FOR FLASH MEMORY

Application Number 20150221388 - August 6, 2015

A non-volatile memory device includes a control circuit configured to perform a block erase operation including a block erase cycle and an…

Integrated Silicon Solution Federal District Court Decisions

Goodman v. Intel Corporation et al

California Northern District Court - April 19, 2012

STIPULATED PROTECTIVE ORDER. Signed by Judge Maxine M. Chesney on April 19, 2012. (mmclc2, COURT STAFF) (Filed on 4/19/2012)

Goodman v. Intel Corporation et al

California Northern District Court - March 26, 2012

ORDER EXTENDING TIME FOR EXCHANGE OF PRELIMINARY CLAIM CONSTRUCTIONS AND EXTRINSIC EVIDENCE PURSUANT TO PATEN L.R. 4-2. Signed by Judge…

Goodman v. Intel Corporation et al

California Northern District Court - March 12, 2012

ORDER RE DISMISSAL OF CLAIMS AGAINST INTEL CORPORATION WITH PREJUDICE. Signed by Judge Maxine M. Chesney on March 12, 2012. (mmclc2, COURT…

Goodman v. Intel Corporation et al

California Northern District Court - March 6, 2012

ORDER EXTENDING TIME FOR DEFENDANT ISSI TO SERVE P.R. 3-3 INVALIDITY CONTETIONS. Signed by Judge Maxine M. Chesney on March 6, 2012. (mmclc2,…

Goodman v. Intel Corporation et al

California Northern District Court - February 1, 2012

ORDER FOR STIPULATED CONDITIONAL DISMISSAL AS TO INTEL CORPORATION. Signed by Judge Maxine M. Chesney on February 1, 2012. (mmclc2, COURT…