Defect Detection and Response
Granted: March 25, 2010
Application Number:
20100074515
To increase inspection throughput, the field of view of an infrared camera can be moved over the sample at a constant velocity. Throughout this moving, a modulation (such as optical or electrical) can be provided to the sample and infrared images can be captured using the infrared camera. Moving the field of view, providing the modulation, and capturing the infrared images can be synchronized. The infrared images can be filtered to generate the time delay lock-in thermography, thereby…
PERIODIC PATTERNS AND TECHNIQUE TO CONTROL MISALIGNMENT BETWEEN TWO LAYERS
Granted: March 25, 2010
Application Number:
20100073688
A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal.
DEFECT DETECTION USING TIME DELAY LOCK-IN THERMOGRAPHY (LIT) AND DARK FIELD LIT
Granted: March 25, 2010
Application Number:
20100073665
To increase inspection throughput, the field of view (FOV) of an IR camera can be moved over the sample at a constant velocity. Throughout this moving, a modulation (e.g. optical or electrical) can be provided to the sample and IR images can be captured using the IR camera. Moving the FOV, providing the modulation, and capturing the IR images can be synchronized. The IR images can be filtered to generate the time delay LIT, thereby providing defect identification. In one embodiment, this…
Process Excursion Detection
Granted: March 18, 2010
Application Number:
20100067781
A method for analyzing defect information on a substrate, including logically dividing the substrate into zones, and detecting defects on the substrate to produce the defect information. The defect information from the substrate is analyzed on a zone by zone basis to produce defect level classifications for the defects within each zone. The zonal defect level classifications are analyzed according to at least one analysis method. The defect level classifications are preferably selected…
COMPUTER-IMPLEMENTED METHODS FOR INSPECTING AND/OR CLASSIFYING A WAFER
Granted: March 11, 2010
Application Number:
20100060888
Computer-implemented methods for inspecting and/or classifying a wafer are provided. One computer-implemented includes detecting defects on a wafer using one or more defect detection parameters, which are determined based on a non-spatially localized characteristic of the wafer that is determined using output responsive to light scattered from the wafer generated by an inspection system. Another computer-implemented method includes classifying a wafer based on a combination of a…
METROLOGY THROUGH USE OF FEED FORWARD FEED SIDEWAYS AND MEASUREMENT CELL RE-USE
Granted: January 21, 2010
Application Number:
20100017005
Metrology may be implemented during semiconductor device fabrication by a) modeling a first measurement on a first test cell formed in a layer of a partially fabricated device; b) performing a second measurement on a second test cell in the layer; c) feeding information from the second measurement into the modeling of the first measurement; and after a lithography pattern has been formed on the layer including the first and second test cells, d) modeling a third and a fourth measurement…
Apparatus and Methods for Determining Overlay and Uses of Same
Granted: January 7, 2010
Application Number:
20100005442
Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets…
Method for Detection of Oversized Sub-Resolution Assist Features
Granted: December 17, 2009
Application Number:
20090310136
Disclosed are methods and apparatus for inspecting a sub-resolution assist features (SRAF) on a reticle. A test flux measurement for a boundary area that encompasses a width and a length portion of a test SRAF is determined, and at least one reference flux measurement for one or more boundary areas of one or more reference SRAF's is determined. The test flux measurement is compared with the reference flux measurements. The comparison is used to then determine whether the test SRAF is…
METHODS AND SYSTEMS FOR UTILIZING DESIGN DATA IN COMBINATION WITH INSPECTION DATA
Granted: December 3, 2009
Application Number:
20090297019
Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the…
METHODS OF AND APPARATUSES FOR MAINTENANCE, DIAGNOSIS, AND OPTIMIZATION OF PROCESSES
Granted: November 26, 2009
Application Number:
20090292506
One aspect of the present invention is a method of monitoring processes, optimizing processes, and diagnosing problems in the performance of a process tool for processing a workpiece. Another aspect of the present invention is a system configured for monitoring processes, optimizing processes, and diagnosing problems in the performance of a process tool for processing a workpiece. One embodiment of the present invention includes a software program that can be implemented in a computer…
OVERLAY MARKS, METHODS OF OVERLAY MARK DESIGN AND METHODS OF OVERLAY MEASUREMENTS
Granted: November 26, 2009
Application Number:
20090291513
An overlay mark for determining the relative shift between two or more successive layers of a substrate and methods for using such overlay mark are disclosed. In one embodiment, the overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of…
METHODS AND SYSTEMS FOR BINNING DEFECTS DETECTED ON A SPECIMEN
Granted: November 26, 2009
Application Number:
20090290784
Methods and systems for binning defects detected on a specimen are provided. One method includes comparing a test image to reference images. The test image includes an image of one or more patterned features formed on the specimen proximate to a defect detected on the specimen. The reference images include images of one or more patterned features associated with different regions of interest within a device being formed on the specimen. If the one or more patterned features of the test…
APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY
Granted: November 19, 2009
Application Number:
20090284744
Disclosed are apparatus and methods for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample. Targets A, B, C and D that each include a portion of the first and second structures are provided. The target A is designed to have an offset Xa between its first and second structures portions; the target B is designed to have an offset Xb between its first and second structures portions;…
MEASURING THE SHAPE AND THICKNESS VARIATION OF A WAFER WITH HIGH SLOPES
Granted: November 19, 2009
Application Number:
20090284734
In one embodiment, an interferometer system comprises two unequal path interferometers assemble comprising; a first reference flat having a first length L1 in a first dimension, a second reference flat having a second length L2 in the first dimension, a cavity D1 defined by a distance between the first reference flat and the second reference flat, a wafer holder to receive an object in the cavity such that an optical path remains open at an outer annual area between the first reference…
In-Situ Differential Spectroscopy
Granted: November 12, 2009
Application Number:
20090278044
A spectrometer having an electron beam generator for generating an electron beam that is directed at a sample. An electron beam positioner directs the electron beam onto a position of the sample, and thereby produces a secondary emitted stream from the sample, where the secondary emitted stream includes at least one of electrons and x-rays. An secondary emitted stream positioner positions the secondary emitted stream onto a detector array, which receives the secondary emitted stream and…
SYSTEMS AND METHODS FOR MEASUREMENT OF A SPECIMEN WITH VACUUM ULTRAVIOLET LIGHT
Granted: November 12, 2009
Application Number:
20090279088
Various systems for measurement of a specimen are provided. One system includes a first optical subsystem, which is disposed within a purged environment. The purged environment may be provided by a differential purging subsystem. The first optical subsystem performs measurements using vacuum ultraviolet light. This system also includes a second optical subsystem, which is disposed within a non-purged environment. The second optical subsystem performs measurements using non-vacuum…
TARGET DESIGN AND METHODS FOR SCATTEROMETRY OVERLAY DETERMINATION
Granted: November 12, 2009
Application Number:
20090279091
Disclosed are methods and apparatus for determining overlay error. Radiation that is scattered from each of a plurality of cells of a target is measured. Each cell includes at least a first grating structure formed by a first process and a second grating structure formed by a second process and wherein each cell has a predefined offset between such each cell's first and second grating structures. The first and second grating structures of the different cells have different predefined…
HIGH RESOLUTION MONITORING OF CD VARIATIONS
Granted: October 15, 2009
Application Number:
20090259605
An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one…
PERIODIC PATTERNS AND TECHNIQUE TO CONTROL MISALIGMENT BETWEEN TWO LAYERS
Granted: September 17, 2009
Application Number:
20090231584
A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal.
APPARATUS AND METHODS FOR DETERMINING OVERLAY OF STRUCTURES HAVING ROTATIONAL OR MIRROR SYMMETRY
Granted: September 10, 2009
Application Number:
20090224413
Disclosed are overlay targets having flexible symmetry characteristics and metrology techniques for measuring the overlay error between two or more successive layers of such targets. In one embodiment, a target includes structures for measuring overlay error (or a shift) in both the x and y direction, wherein the x structures have a different center of symmetry (COS) than the y structures. In another embodiment, one of the x and y structures is invariant with a 180° rotation and the…
