SHOWERHEAD ELECTRODE ASSEMBLY IN A CAPACITIVELY COUPLED PLASMA PROCESSING APPARATUS
Granted: March 27, 2014
Application Number:
20140087488
A showerhead electrode assembly for use in a capacitively coupled plasma processing apparatus comprising a heat transfer plate. The heat transfer plate having independently controllable gas volumes which may be pressurized to locally control thermal conductance between a heater member and a cooling member such that uniform temperatures may be established on a plasma exposed surface of the showerhead electrode assembly.
METHOD FOR ETCHING WITH CONTROLLED WIGGLING
Granted: March 27, 2014
Application Number:
20140087486
A method for etching trenches in an etch layer disposed below a patterned organic mask is provided. The patterned organic mask is treated, comprising flowing a treatment gas comprising H2 and N2, forming a plasma from the treatment gas, making patterned organic mask more resistant to wiggling, and stopping the flow of the treatment gas. Trenches are etched in the etch layer through the patterned organic mask.
METHOD OF REMOVING DAMAGED EPOXY FROM ELECTROSTATIC CHUCK
Granted: March 27, 2014
Application Number:
20140083461
A method of removing an epoxy band from an electrostatic chuck includes securing the electrostatic chuck in a servicing fixture, applying a thermal source to the epoxy band to breakdown a plurality of adhesive bonds securing the epoxy band to the electrostatic chuck, forming a hole in the epoxy band and pulling the epoxy band from the electrostatic chuck. A system for removing an epoxy band from an electrostatic chuck is also described.
PLASMA MEDIATED ASHING PROCESSES
Granted: March 20, 2014
Application Number:
20140076353
A plasma ashing process for removing photoresist, polymers and/or residues from a substrate, the process includes placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (02) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma by adding an atomic oxygen scavenging gas to the gas mixture; and exposing the substrate to the plasma to…
METHOD AND SYSTEM RELATED TO SEMICONDUCTOR PROCESSING EQUIPMENT
Granted: March 13, 2014
Application Number:
20140072397
Semiconductor processing equipment. At least some of the illustrative embodiments are systems including: a front end robot configured to pull individual wafers from at least one wafer carrier; a linear robot in operational relationship to the front end robot, the linear robot configured to move wafers along an extended length path; and a first processing cluster in operational relationship to the linear robot. The first processing cluster may include: a first processing chamber; a second…
PROTECTIVE COATING FOR A PLASMA PROCESSING CHAMBER PART AND A METHOD OF USE
Granted: March 6, 2014
Application Number:
20140065835
A flexible polymer or elastomer coated RF return strap to be used in a plasma chamber to protect the RF strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in a plasma processing apparatus. The coated RF strap minimizes particle generation and exhibits lower erosion rates than an uncoated base component. Such a coated member having a flexible coating on a conductive flexible…
GAS DISTRIBUTION SHOWERHEAD FOR INDUCTIVELY COUPLED PLASMA ETCH REACTOR
Granted: March 6, 2014
Application Number:
20140065827
A two piece ceramic showerhead includes upper and lower plates which deliver process gas to an inductively coupled plasma processing chamber. The upper plate overlies the lower plate and includes radially extending gas passages which extend inwardly from an outer periphery of the upper plate, axially extending gas passages in fluid communication with the radially extending gas passages and an annular recess forming a plenum between the upper and lower plates. The lower plate includes…
METHOD FOR USING A PURGE RING WITH SPLIT BAFFLES IN PHOTONIC THERMAL PROCESSING SYSTEMS
Granted: March 6, 2014
Application Number:
20140065557
A method for supplying a first gas and a second gas using a purge ring in a photonic processing system includes arranging a first layer and a second layer to define a first plenum and a first baffle, arranging the second layer and a third layer to define a second plenum and a second baffle, receiving a first gas at the first plenum that flows through the first plenum and the first baffle to an inner region, and receiving a second gas at the second plenum that flows through the second…
Apparatus for Cleaning a Semiconductor Substrate
Granted: March 6, 2014
Application Number:
20140059789
An apparatus for processing a substrate is provided. The apparatus includes a solid material having a support side and a contact side. The contact side has an outer surface, and the outer surface is configured to become softer relative to a remainder of the solid material when exposed to an activation solution. The apparatus includes a support structure configured to support the solid material from the support side of the solid material, such that the contact side of the solid material…
METHODS, DEVICES, AND MATERIALS FOR METALLIZATION
Granted: February 27, 2014
Application Number:
20140054776
A method of making an electronic device which in one embodiment comprises providing a substrate, electrolessly depositing a barrier metal at least on portions of the substrate, and using wet chemistry such as electroless deposition to deposit a substantially gold-free wetting layer having solder wettability onto the barrier metal. An electronic device which in one embodiment comprises a metallization stack. The metallization stack comprises a barrier metal deposited electrolessly and a…
METHOD AND APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES
Granted: February 27, 2014
Application Number:
20140054280
In an apparatus and process for treating wafer-shaped articles, a spin chuck holds a wafer-shaped article in a predetermined orientation relative to an upper surface of the spin chuck. The apparatus includes a heating assembly having a housing that contains at least one infrared heating element. The heating assembly is mounted above an upper surface of the spin chuck and adjacent a wafer-shaped article when mounted on the spin chuck. The housing comprises a gas inlet connected to a gas…
Electronic Knob for Tuning Radial Etch Non-Uniformity at VHF Frequencies
Granted: February 27, 2014
Application Number:
20140054268
System and methods for plasma processing of a wafer include a chamber with an electrode having a support surface and an outer edge region defined thereon. A radio frequency power is communicated to the electrode via a conductive delivery connection and returned through a conductive return connection. A capacitance is applied to a first end that causes appropriate capacitive adjustment and opposite impedance adjustment at a second end of the conductive delivery connection that is coupled…
METHOD AND APPARATUS FOR PROCESSING WAFER-SHAPED ARTICLES
Granted: February 27, 2014
Application Number:
20140053982
An apparatus and method for processing wafer-shaped articles features a spin chuck that is axially displaceable between at least two exhaust levels within a surrounding collector. A gas supply system comprises ducts for supplying gas separately to a first interior region of the collector that is above the spin chuck and a second interior region that is below the spin chuck. The pressure differential within the collector above and below the spin chuck can thereby be controlled to prevent…
Megasonic Precision Cleaning Of Semiconductor Process Equipment Components And Parts
Granted: February 27, 2014
Application Number:
20140053884
Apparatuses are provided for cleaning a processing component using megasonic energy including megasonic jets in combination with selective chemistries to remove sub-micron particulate contaminants from the surfaces of the processing component that is used in cleaning semiconductor, medical, or any other processing substrates. The apparatus includes a processing chamber having a carrier element that is configured to support the processing component. The carrier element includes a…
HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING
Granted: February 20, 2014
Application Number:
20140047705
An exemplary method for manufacturing a heating plate for a substrate support assembly includes forming holes in at least one sheet, printing a slurry of conductor powder, or pressing a precut metal foil, or spraying a slurry of conductor powder, on the at least one sheet to form the planar heater zones, the power supply lines, and power return lines. The holes in the at least one sheet are filled with a slurry of conductor powder to form power supply and power return vias. The sheets…
ETCH WITH MIXED MODE PULSING
Granted: February 20, 2014
Application Number:
20140051256
A method for etching a dielectric layer disposed below a patterned organic mask with features, with hardmasks at bottoms of some of the organic mask features is provided. An etch gas is provided. The etch gas is formed into a plasma. A bias RF with a frequency between 2 and 60 MHz is provided that provides pulsed bias with a pulse frequency between 10 Hz and 1 kHz wherein the pulsed bias selectively deposits on top of the organic mask with respect to the dielectric layer.
COPPER DISCOLORATION PREVENTION FOLLOWING BEVEL ETCH PROCESS
Granted: February 20, 2014
Application Number:
20140051255
A method of bevel edge etching a semiconductor substrate having exposed copper surfaces with a fluorine-containing plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the fluorine-containing plasma in the bevel etcher; evacuating the bevel etcher after the bevel edge etching is completed; flowing defluorinating gas into the bevel etcher; energizing the defluorinating…
MOVABLE CHAMBER LINER PLASMA CONFINEMENT SCREEN COMBINATION FOR PLASMA PROCESSING APPARATUSES
Granted: February 20, 2014
Application Number:
20140051254
A movable symmetric chamber liner in a plasma reaction chamber, for protecting the plasma reaction chamber, enhancing the plasma density and uniformity, and reducing process gas consumption, comprising a cylindrical wall, a bottom wall with a plurality of openings, a raised inner rim with an embedded heater, heater contacts, and RF ground return contacts. The chamber liner is moved by actuators between an upper position at which substrates can be transferred into and out of the chamber,…
SYSTEM AND METHOD FOR MONITORING TEMPERATURES OF AND CONTROLLING MULTIPLEXED HEATER ARRAY
Granted: February 20, 2014
Application Number:
20140048529
A system for measuring temperatures of and controlling a multi-zone heating plate in a substrate support assembly used to support a semiconductor substrate in a semiconductor processing includes a current measurement device and switching arrangements. A first switching arrangement connects power return lines selectively to an electrical ground, a voltage supply or an electrically isolated terminal, independent of the other power return lines. A second switching arrangement connects power…
METHOD OF DIELECTRIC FILM TREATMENT
Granted: February 20, 2014
Application Number:
20140048108
A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are…
