ETCH WITH MIXED MODE PULSING
Granted: February 20, 2014
Application Number:
20140051256
A method for etching a dielectric layer disposed below a patterned organic mask with features, with hardmasks at bottoms of some of the organic mask features is provided. An etch gas is provided. The etch gas is formed into a plasma. A bias RF with a frequency between 2 and 60 MHz is provided that provides pulsed bias with a pulse frequency between 10 Hz and 1 kHz wherein the pulsed bias selectively deposits on top of the organic mask with respect to the dielectric layer.
HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING
Granted: February 13, 2014
Application Number:
20140045337
An exemplary method is directed to powering heaters in a substrate support assembly on which a semiconductor substrate is supported. The support assembly has an array of heaters powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to a power supply and at least two of the heaters and each power return line is connected to at least two of the heaters, and a switching device which independently connects each one of the…
METHOD AND APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES
Granted: February 13, 2014
Application Number:
20140041803
In an apparatus and method for treating a wafer-shaped article, a rotary chuck is configured to hold a wafer-shaped article of a predetermined diameter such that a surface of the wafer-shaped article facing the rotary chuck is spaced from an opposing peripheral surface of the rotary chuck. The opposing peripheral surface comprises a first surface overlapping an outer peripheral edge of a wafer-shaped article when positioned on the spin chuck and a second surface positioned radially…
Single Substrate Processing Head For Particle Removal Using Low Viscosity Fluid
Granted: February 13, 2014
Application Number:
20140041581
A head for dispensing a thin film of a fluid over a substrate is disclosed. The head includes a body assembly that extends between a first and a second end that is at least a width of the substrate. The body includes a main bore that is defined between the first and the second ends, the main bore connected to an upper side of a reservoir through a plurality of feeds that are defined between the main bore and the reservoir. The body also includes a plurality of outlets connected to a…
Method and Apparatus for Physical Confinement of a Liquid Meniscus Over a Semiconductor Wafer
Granted: February 13, 2014
Application Number:
20140041226
Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a chemical head. The chemical head including multiple first return conduits formed from a first flat region in a head surface and multiple second return conduits formed from a second flat region in the head surface. The second flat region being disposed immediately adjacent to the first flat region and the second flat region being in a plane substantially parallel to and…
METHOD AND APPARATUS FOR CONTROLLING THE SPATIAL TEMPERATURE DISTRIBUTION ACROSS THE SURFACE OF A WORKPIECE SUPPORT
Granted: February 6, 2014
Application Number:
20140034608
A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a…
METHOD FOR PROVIDING VIAS
Granted: February 6, 2014
Application Number:
20140038419
A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H2. A plasma is formed from the treatment gas. The patterned via holes are rounded to form patterned rounded via holes by exposing the patterned via holes to the plasma. The flow of the treatment gas is stopped. The plurality of patterned rounded via holes are transferred…
BEVEL ETCHER WITH VACUUM CHUCK
Granted: February 6, 2014
Application Number:
20140038418
A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support…
Method for Strengthening Adhesion Between Dielectric Layers Formed Adjacent to Metal Layers
Granted: February 6, 2014
Application Number:
20140037982
A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of…
Methods for Controlling Plasma Constituent Flux and Deposition During Semiconductor Fabrication and Apparatus for Implementing the Same
Granted: February 6, 2014
Application Number:
20140034609
A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on…
METALLIZATION MIXTURES AND ELECTRONIC DEVICES
Granted: February 6, 2014
Application Number:
20140034370
One aspect of the present invention is a method of processing a substrate. In one embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles and an electroless deposition solution and electrolessly depositing a metal matrix and co-depositing the metal particles. In another embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles…
EDGE RING ASSEMBLY FOR PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF
Granted: February 6, 2014
Application Number:
20140034242
A two piece edge ring assembly is configured to surround a semiconductor substrate in a plasma processing chamber wherein plasma is generated and used to process the semiconductor substrate. The edge ring assembly comprises upper and lower rings which have an outer protective coating. The upper and lower rings are configured such that the upper ring is supported on an outer portion of the upper surface of the lower ring and the protective coatings are on plasma exposed surfaces of the…
Acoustic Assisted Single Wafer Wet Clean For Semiconductor Wafer Process
Granted: February 6, 2014
Application Number:
20140034096
An apparatus for cleaning a substrate includes a dispense head configured to supply a liquid medium as a meniscus to the surface of the substrate and a rinse head that is equipped with at least an inlet conduit to supply rinse chemical to a top substrate surface as a meniscus. An outlet conduit is disposed on either side of the inlet conduit and is configured to remove the rinse chemical and liquid medium from the substrate surface. The inlet conduit and the outlet conduits are…
METHODS FOR VERIFYING GAS FLOW RATES FROM A GAS SUPPLY SYSTEM INTO A PLASMA PROCESSING CHAMBER
Granted: February 6, 2014
Application Number:
20140033828
Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream…
PLATEN AND ADAPTER ASSEMBLIES FOR FACILITATING SILICON ELECTRODE POLISHING
Granted: January 30, 2014
Application Number:
20140030966
A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen secured to the polishing, which can comprise a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts and mount receptacles can be configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face…
METHOD FOR SHRINK AND TUNE TRENCH/VIA CD
Granted: January 30, 2014
Application Number:
20140030893
A method for etching with CD reduction, an etch layer disposed below a silicon containing mask layer under a patterned organic mask with features with a first CD. Features are opened in the silicon containing mask layer using the patterned organic mask, comprising providing an opening gas with an etchant component and polymerizing component, forming the opening gas into a plasma, and providing a pulsed bias with a pulse frequency between 10 Hz and 1 kHz, which etches features through the…
METHOD AND APPARATUS FOR LIQUID TREATMENT OF WAFER-SHAPED ARTICLES
Granted: January 30, 2014
Application Number:
20140026926
An apparatus and method for treating a wafer-shaped article utilizes a gas supply hood that can be positioned in a working position above a holder so as to cover all or substantially all of a wafer shaped article when positioned on the holder. The gas supply hood accommodates a fluid dispenser for dispensing at least one fluid onto an upper surface of the wafer shaped article positioned on the holder. The gas supply hood permits the fluid dispenser to be moved laterally of the holder and…
END EFFECTOR HAVING MULTIPLE-POSITION CONTACT POINTS
Granted: January 16, 2014
Application Number:
20140017042
An apparatus is provided for lifting a substrate. The apparatus comprises a first piece and a second piece. The apparatus further comprises a set of first contact points in a plane and a set of second contact points, where at least one contact point from each set is present on the first piece and the second piece. The apparatus also comprises an actuator that translates the first piece, substantially parallel to the plane, between a first position and a second position relative to the…
Method and System for Uniformly Applying a Multi-Phase Cleaning Solution to a Substrate
Granted: January 16, 2014
Application Number:
20140014146
A system for cleaning a substrate includes a carrier and a cleaning station. The carrier is capable of holding the substrate and is movably coupled to a pair of guide tracks extending a length of the system. The cleaning station includes a force applicator and a gate. The force applicator has an applicator length and is operatively coupled to the cleaning station. The force applicator is rotatable and is adjusted to a first height off the surface of the carrier as the substrate is being…
Adjustment of Power and Frequency Based on Three or More States
Granted: January 9, 2014
Application Number:
20140009073
Systems and methods for adjusting power and frequency based on three or more states are described. One of the methods includes receiving a pulsed signal having multiple states. The pulsed signal is received by multiple radio frequency (RF) generators. When the pulsed signal having a first state is received, an RF signal having a pre-set power level is generated by a first RF generator and an RF signal having a pre-set power level is generated by a second RF generator. Moreover, when the…
