HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING
Granted: January 2, 2014
Application Number:
20140004702
A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone includes one or more heater element made of an insulator-conductor composite. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping…
EDGE SEAL FOR LOWER ELECTRODE ASSEMBLY
Granted: December 26, 2013
Application Number:
20130340942
A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled lower base plate, an upper plate, a mounting groove surrounding a bond layer and an edge seal comprising an elastomeric band having an outer concave surface in an uncompressed state, the band mounted in the groove such that upper and lower ends of the band are axially compressed and a maximum outward bulging of the band is no greater than a…
ADJUSTABLE GAP CAPACITIVELY COUPLED RF PLASMA REACTOR INCLUDING LATERAL BELLOWS AND NON-CONTACT PARTICLE SEAL
Granted: December 26, 2013
Application Number:
20130340938
A plasma processing chamber includes a cantilever assembly and at least one vacuum isolation member configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism…
CLAMPED MONOLITHIC SHOWERHEAD ELECTRODE
Granted: December 19, 2013
Application Number:
20130337654
An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the…
LAYER-LAYER ETCH OF NON VOLATILE MATERIALS USING PLASMA
Granted: December 5, 2013
Application Number:
20130323932
A method for etching a metal layer, comprising plurality of cycles is provided. In each cycle, an etch gas comprising PF3, CO and NO, or COF2 is flowed into a process chamber. In each cycle, the etch gas is formed into a plasma. In each cycle, the flow of the etch gas is stopped.
SUBSTRATE SUPPORT PROVIDING GAP HEIGHT AND PLANARIZATION ADJUSTMENT IN PLASMA PROCESSING CHAMBER
Granted: December 5, 2013
Application Number:
20130323860
A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of…
POST-DEPOSITION CLEANING METHODS AND FORMULATIONS FOR SUBSTRATES WITH CAP LAYERS
Granted: December 5, 2013
Application Number:
20130323410
One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with a solution comprising an amine to provide a pH for the cleaning solution of 7 to about 13. Another embodiment of the presented invention is a method of cleaning substrates. Still another…
METHOD AND APPARATUS FOR PROCESSING WAFER-SHAPED ARTICLES
Granted: December 5, 2013
Application Number:
20130319472
A device and method for treating the surface of a semiconductor wafer provides a treatment fluid in the form of a dispersion of gas bubbles in a treatment liquid generated at acoustic pressures less than those required to induce cavitation in the treatment liquid. A resonator supplies ultrasonic or megasonic energy to the treatment fluid and is configured to create an interference pattern in the treatment fluid comprising regions of pressure amplitude minima and maxima at an interface of…
APPARATUS AND METHOD FOR TRANSPORTING WAFER-SHAPED ARTICLES
Granted: November 21, 2013
Application Number:
20130309048
An apparatus for transporting a wafer-shaped article, comprises a holder configured to hold a wafer-shaped article of a predetermined diameter, attached to a robot arm that is horizontally movable, via a linkage. The holder is vertically movable relative to the distal end of the robot arm via the linkage from a retracted position to an extended position.
METHOD AND APPARATUS FOR LIQUID TREATMENT OF WAFER-SHAPED ARTICLES
Granted: November 21, 2013
Application Number:
20130309874
An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, a liquid dispenser for dispensing a treatment liquid onto a downwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and a gas dispenser for dispensing a gas within a gap defined between the downwardly-facing surface of the wafer-shaped article and an upper surface of the spin chuck.
System and Method for Controlling Plasma With an Adjustable Coupling to Ground Circuit
Granted: November 21, 2013
Application Number:
20130306240
A system and method for controlling plasma. The system includes a semiconductor chamber comprising a powered electrode, another electrode, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. There is at least one grounded electrode configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The…
PLASMA CHAMBER TOP PIECE ASSEMBLY
Granted: November 21, 2013
Application Number:
20130306239
A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and…
COMPRESSION MEMBER FOR USE IN SHOWERHEAD ELECTRODE ASSEMBLY
Granted: November 14, 2013
Application Number:
20130299605
A compression member for use in a showerhead electrode assembly of a capacitively coupled plasma chamber. The member applies a compression force to a portion of a film heater adjacent a power supply boot on an upper surface of a thermal control plate and is located between the thermal control plate and a temperature-controlled top plate. The member is composed of an electrically insulating elastomeric material which can work over a large range of compressions and temperatures.
INSULATED DIELECTRIC WINDOW ASSEMBLY OF AN INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS
Granted: November 7, 2013
Application Number:
20130292055
An insulated dielectric window assembly comprising a dielectric window of an inductively coupled plasma processing apparatus; an upper polymeric ring, and a lower polymeric ring. The upper polymeric ring insulates the outer edge of the dielectric window from a cooler ambient atmosphere and the lower polymeric ring insulates the lower surface of the dielectric window from a chamber surface supporting the window.
METHOD AND APPARATUS FOR LIQUID TREATMENT OF WAFER-SHAPED ARTICLES
Granted: October 31, 2013
Application Number:
20130284208
An in-line mixing system provides a process liquid for treatment of wafer-shaped articles. The system comprises a first flow regulator configured to regulate flow of a first liquid stream, a second flow regulator configured to regulate flow of a second liquid stream having a chemical component, a refractive index meter configured to provide a refractive index measurement of a mixture of the first and second liquid streams, a combined flow meter configured to provide a combined flow…
LAYER-LAYER ETCH OF NON VOLATILE MATERIALS
Granted: October 17, 2013
Application Number:
20130270227
A method for etching a metal layer dispose below a mask is provided. The metal layer is placed in an etch chamber. A precursor gas is flowed into the etch chamber. The precursor gas is adsorbed into the metal layer to form a precursor metal complex. The precursor metal complex is heated to a temperature above a vaporization temperature of the precursor metal complex, while the metal layer is exposed to the precursor gas. The vaporized precursor metal complex is exhausted from the etch…
CURRENT PEAK SPREADING SCHEMES FOR MULTIPLEXED HEATED ARRAY
Granted: October 17, 2013
Application Number:
20130270250
A method of operating a heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus, wherein the heating plate comprises power supply lines and power return lines and respective heater zone connected between every pair of power supply line and power return line. The method reduces maximum currents carried by the power supply lines and power return lines by temporally spreading current pulses for powering the heater…
METHOD AND APPARATUS FOR FORMING FEATURES WITH PLASMA PRE-ETCH TREATMENT ON PHOTORESIST
Granted: October 10, 2013
Application Number:
20130267097
A method for forming features through a photoresist mask into an underlying layer is provided. The photoresist mask has patterned mask features. The photoresist mask has patterned mask features. A treatment gas containing H2 and N2 is provided. A plasma is generated from the treatment gas, and the photoresist mask is exposed to the plasma. The treatment gas is stopped, and then the features are etched into the underlying layer through the plasma-treated photoresist mask.
CONTROL OF BEVEL ETCH FILM PROFILE USING PLASMA EXCLUSION ZONE RINGS LARGER THAN THE WAFER DIAMETER
Granted: October 10, 2013
Application Number:
20130264015
A method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The substrate has a dielectric layer overlying a top surface and a bevel edge of the substrate, the layer extending above and below an apex of the bevel edge. A process gas is introduced into the reaction chamber and energized into a plasma. The bevel edge is cleaned with the plasma so as to remove…
INSTALLATION FIXTURE FOR ELASTOMER BANDS AND METHODS OF USING THE SAME
Granted: October 10, 2013
Application Number:
20130263427
A method of installing an elastomer band as a protective edge seal around a portion of a semiconductor substrate support used for supporting a semiconductor substrate in a plasma processing chamber, which includes expanding an elastomer band into a circular shape having a diameter greater than a diameter of a mounting groove within the substrate support; clamping the elastomer band in the expanded shape between a base ring and a clamp ring; placing the elastomer band over the substrate…
