SELF LIMITING LATERAL ATOMIC LAYER ETCH
Granted: June 22, 2017
Application Number:
20170178917
Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold…
VARIABLE TEMPERATURE HARDWARE AND METHODS FOR REDUCTION OF WAFER BACKSIDE DEPOSITION
Granted: June 22, 2017
Application Number:
20170178898
A process tuning kit for use in a chemical deposition apparatus wherein the process tuning kit includes a carrier ring, horseshoes and shims. The horseshoes have the same dimensions and the shims are provided in sets with different thicknesses to control the height of the horseshoes with respect to an upper surface of a pedestal assembly on which the horseshoes and shims are mounted. A semiconductor substrate is transported into a vacuum chamber of the chemical deposition apparatus by…
MULTI-PLANE HEATER FOR SEMICONDUCTOR SUBSTRATE SUPPORT
Granted: June 15, 2017
Application Number:
20170167790
A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a multi-plane heater such as a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate. The multi-plane heater includes at least one pair of vertically offset heating elements connected in series or parallel to control heating output in a heating zone on the substrate support. The thermal control elements…
SHOWERHEAD ASSEMBLY
Granted: June 15, 2017
Application Number:
20170167024
A face plate of a showerhead assembly of a deposition apparatus in which semiconductor substrates are processed includes gas holes arranged in an asymmetric pattern with a hole density which is substantially uniform or varies across the face plate. The face plate can include a lower wall and an outer wall extending vertically upwardly from an outer periphery of the lower wall. The outer wall is sealed to an outer periphery of a back plate such that an inner plenum is formed between the…
Systems Comprising Silicon Coated Gas Supply Conduits and Methods for Applying Coatings
Granted: February 9, 2017
Application Number:
20170040147
In one embodiment, a plasma etching system may include a process gas source, a plasma processing chamber, and a gas supply conduit. A plasma can be formed from a process gas recipe in the plasma processing chamber. The gas supply conduit may include a corrosion resistant layered structure forming an inner recipe contacting surface and an outer environment contacting surface. The corrosion resistant layered structure may include a protective silicon layer, a passivated coupling layer and…
INTERFACE PASSIVATION LAYERS AND METHODS OF FABRICATING
Granted: November 24, 2016
Application Number:
20160343806
Methods for fabricating interface passivation layers in a circuit structure are provided. The method includes forming a silicon-germanium layer over a substrate, removing a native oxide layer from an upper surface of the silicon-germanium layer, and exposing the upper surface of the silicon-germanium layer to an ozone-containing solution, resulting in an interface passivation layer with a higher concentration of germanium-dioxide present than germanium-oxide. The resulting interface…
DEPOSITION APPARATUS INCLUDING EDGE PLENUM SHOWERHEAD ASSEMBLY
Granted: November 24, 2016
Application Number:
20160340781
A deposition apparatus for processing substrates includes a vacuum chamber including a processing zone in which a substrate may be processed. First and second gas sources are in fluid communication with the vacuum chamber. The first gas source is operable to supply a first gas into the vacuum chamber and the second gas source is operable to supply a second gas into the vacuum chamber. A showerhead assembly includes a face plate and back plate. The back plate includes a first gas inlet in…
HIGH TEMPERATURE SUBSTRATE PEDESTAL MODULE AND COMPONENTS THEREOF
Granted: November 17, 2016
Application Number:
20160336213
A semiconductor substrate processing apparatus comprises a vacuum chamber in which a semiconductor substrate may be processed, a showerhead module through which process gas from a process gas source is supplied to a processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen, a stem having a side wall defining a cylindrical interior region thereof, a lower surface, and an upper end that supports the platen, and an adapter having…
SUBSTRATE PEDESTAL MODULE INCLUDING BACKSIDE GAS DELIVERY TUBE AND METHOD OF MAKING
Granted: November 17, 2016
Application Number:
20160333475
A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of…
SUBSTRATE SUPPORT WITH THERMAL ZONES FOR SEMICONDUCTOR PROCESSING
Granted: October 13, 2016
Application Number:
20160300741
A substrate support in a semiconductor plasma processing apparatus, comprises multiple independently controllable thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the thermal zones. A substrate support in which the substrate support is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the substrate support include bonding together ceramic or polymer…
METHOD AND APPARATUS TO MINIMIZE SEAM EFFECT DURING TEOS OXIDE FILM DEPOSITION
Granted: September 8, 2016
Application Number:
20160260603
A method of minimizing a seam effect of a deposited TEOS oxide film during a trench filling process performed on a semiconductor substrate in a semiconductor substrate plasma processing apparatus comprises supporting a semiconductor substrate on a pedestal in a vacuum chamber thereof. Process gas including TEOS, an oxidant, and argon is flowed through a face plate of a showerhead assembly into a processing region of the vacuum chamber. RF energy energizes the process gas into a plasma…
Gas Distribution System For Ceramic Showerhead of Plasma Etch Reactor
Granted: July 28, 2016
Application Number:
20160217977
A gas delivery system for a ceramic showerhead includes gas connection blocks and a gas ring, the gas connection blocks mounted on the gas ring such that gas outlets in the blocks deliver process gas to gas inlets in an outer periphery of the showerhead. The gas ring includes a bottom ring with channels therein and a welded cover plate enclosing the channels. The gas ring can include a first channel extending ½ the length of the gas ring, two second channels connected at midpoints…
APPARATUS AND METHOD FOR DYNAMIC CONTROL OF PLATED UNIFORMITY WITH THE USE OF REMOTE ELECTRIC CURRENT
Granted: July 28, 2016
Application Number:
20160215408
An apparatus for electroplating metal on a substrate while controlling plating uniformity includes in one aspect: a plating chamber having anolyte and catholyte compartments separated by a membrane; a primary anode positioned in the anolyte compartment; an ionically resistive ionically permeable element positioned between the membrane and a substrate in the catholyte compartment; and a secondary electrode configured to donate and/or divert plating current to and/or from the substrate,…
SYSTEM AND METHOD FOR MONITORING TEMPERATURES OF AND CONTROLLING MULTIPLEXED HEATER ARRAY
Granted: July 14, 2016
Application Number:
20160205725
A system for measuring temperatures of and controlling a multi-zone heating plate in a substrate support assembly used to support a semiconductor substrate in a semiconductor processing includes a current measurement device and switching arrangements. A first switching arrangement connects power return lines selectively to an electrical ground, a voltage supply or an electrically isolated terminal, independent of the other power return lines. A second switching arrangement connects power…
MULTIPLEXED HEATER ARRAY USING AC DRIVE FOR SEMICONDUCTOR PROCESSING
Granted: July 7, 2016
Application Number:
20160198524
A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding…
CONVECTIVE WAFER HEATING BY IMPINGEMENT WITH HOT GAS
Granted: April 28, 2016
Application Number:
20160118274
An apparatus for processing wafer-shaped articles comprises a rotary chuck adapted to hold a wafer shaped article of a predetermined diameter in a predetermined orientation. The chuck includes a heater comprising a plurality of gas nozzles directed toward a surface of a wafer shaped article when held by the chuck. The heater comprises a gas inlet and at least one heating element for heating gas to be discharged through the plurality of gas nozzles. The heater is configured to heat a…
GAS SUPPLY DELIVERY ARRANGEMENT INCLUDING A GAS SPLITTER FOR TUNABLE GAS FLOW CONTROL
Granted: April 21, 2016
Application Number:
20160111258
A gas supply delivery arrangement of a plasma processing system for processing a substrate with gases introduced through at least first, second, and third gas injection zones comprises process gas supply inlets and tuning gas inlets. A mixing manifold comprises gas sticks in fluid communication with a process gas supply and tuning gas sticks in fluid communication with a tuning gas supply. A first gas outlet delivers gas to the first gas injection zone, a second gas outlet delivers gas…
METHOD AND APPARATUS FOR DIAGNOSING STATUS OF PARTS IN REAL TIME IN PLASMA PROCESSING EQUIPMENT
Granted: April 14, 2016
Application Number:
20160103088
Apparatus and methods for diagnosing status of a consumable part of a plasma reaction chamber, the consumable part including at least one conductive element embedded therein. The method includes the steps of: coupling the conductive element to a power supply so that a bias potential relative to the ground is applied to the conductive element; exposing the consumable part to plasma erosion until the conductive element draws a current from the plasma upon exposure of the conductive element…
EDGE-CLAMPED AND MECHANICALLY FASTENED INNER ELECTRODE OF SHOWERHEAD ELECTRODE ASSEMBLY
Granted: March 24, 2016
Application Number:
20160086776
An inner electrode of a showerhead electrode assembly useful for plasma etching includes features providing improved positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. The assembly can include a thermal gasket set and fasteners such as bolts or cam locks located on a radius of ¼ to ½ the radius of the inner electrode. A method of assembling the inner electrode and gasket set to a supporting member is also provided.
HEAT TRANSFER PLATE FOR A SHOWERHEAD ELECTRODE ASSEMBLY OF A CAPACITIVELY COUPLED PLASMA PROCESSING APPARATUS
Granted: March 17, 2016
Application Number:
20160079041
A heat transfer plate useful in a showerhead electrode assembly of a capacitively coupled plasma processing apparatus. The heat transfer plate includes independently controllable gas volumes which may be pressurized to locally control thermal conductance between a heater member and a cooling member such that uniform temperatures may be established on a plasma exposed surface of the showerhead electrode assembly.
