Methods for chemical mechanical planarization and for detecting endpoint of a CMP operation
Granted: November 24, 2009
Patent Number:
7622052
Methods are provided for chemical mechanical planarization of a layer and for determining the endpoint of a CMP operation. In accordance with one embodiment the method for determining an endpoint comprises making a plurality of eddy current thickness measurement of the layer being planarized, each of the plurality of measurements spaced apart by a predetermined length of time. A difference is calculated between sequential ones of the plurality of eddy current measurements, and a…
UV treatment of STI films for increasing tensile stress
Granted: November 24, 2009
Patent Number:
7622162
Using UV radiation, methods to modify shallow trench isolation (STI) film tensile stress to generate channel strain without adversely impacting the efficiency of the transistor fabrication process are disclosed. Methods involve a two phase process: a deposition phase, wherein silanol groups are formed in the silicon dioxide film, and a bond reconstruction phase, wherein UV radiation removes silanol bonds and induce tensile stress in the silicon dioxide film.
Method of improving adhesion between two dielectric films
Granted: November 24, 2009
Patent Number:
7622380
A method of improving adhesion between layers in the formation of a semiconductor device and integrated circuit, and the resultant intermediate semiconductor structure, which include a substrate layer with a low k insulating layer thereover. The low k insulating layer includes a treated surface area of adsorbed gaseous particles. This treated surface area is formed by flowing a gas, preferably, silane, disilane, dichlorosilane, germane or combinations thereof, over a surface of the…
Method for improving mechanical properties of low dielectric constant materials
Granted: November 24, 2009
Patent Number:
7622400
Methods of forming a dielectric layer having a low dielectric constant and high mechanical strength are provided. The methods involve depositing a sub-layer of the dielectric material on a substrate, followed by treating the sub-layer with a plasma. The process of depositing and plasma treating the sub-layers is repeated until a desired thickness has been reached.
High resistance ionic current source
Granted: November 24, 2009
Patent Number:
7622024
A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane…
Method to improve mechanical strength of low-K dielectric film using modulated UV exposure
Granted: November 3, 2009
Patent Number:
7611757
Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrinkage and limiting any increases in the dielectric constant of the film. Methods improve film hardness, modulus and cohesive strength, which provide better integration capability and improved…
Capping before barrier-removal IC fabrication method
Granted: October 20, 2009
Patent Number:
7605082
Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also…
Controlling the temperature of a substrate in a film deposition apparatus
Granted: October 13, 2009
Patent Number:
7601393
A system and method for that allows one part of an atomic layer deposition (ALD) process sequence to occur at a first temperature while allowing another part of the ALD process sequence to occur at a second temperature. In such a fashion, the first temperature can be chosen to be lower such that decomposition or desorption of the adsorbed first reactant does not occur, and the second temperature can be chosen to be higher such that comparably greater deposition rate and film purity can…
Methods for growing low-resistivity tungsten film
Granted: September 15, 2009
Patent Number:
7589017
Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to…
Hydroxyl bond removal and film densification method for oxide films using microwave post treatment
Granted: September 15, 2009
Patent Number:
7589028
Methods of forming dielectric films with increased density and improved film properties are provided. The methods involve exposing dielectric films to microwave radiation. According to various embodiments, the methods may be used to remove hydroxyl bonds, increase film density, reduce or eliminate seams and voids, and optimize film properties such as dielectric constant, refractive index and stress for particular applications. In certain embodiments, the methods are used to form…
Gas-purged vacuum valve
Granted: September 8, 2009
Patent Number:
7585370
A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the…
Photoresist strip method for low-k dielectrics
Granted: September 8, 2009
Patent Number:
7585777
The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer. Methods involve implementing a plasma operation using hydrogen and a weak oxidizing agent, such as carbon dioxide. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material…
Rotating magnet arrays for magnetron sputtering apparatus
Granted: September 8, 2009
Patent Number:
7585399
In one embodiment, a magnetron sputtering apparatus includes one or more magnet arrays for moving ions or charged particles on at least two plasma discharge paths on a target. Charged particles on one of the plasma discharge paths are moved in one direction, while charged particles on the other plasma discharge path are moved in the opposite direction to reduce rotational shifting of deposition flux on the patterned substrates. The plasma discharge paths may be formed by two symmetric…
CVD flowable gap fill
Granted: September 1, 2009
Patent Number:
7582555
The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances…
Electropolishing system and process
Granted: August 25, 2009
Patent Number:
7578923
The present invention provides a process for electropolishing a conductive surface of a semiconductor wafer. During the process, a contact electrode in a contact solution contacts a contact region on surface of the conductive layer with the contact solution. Further, during the process a process electrode in a process solution contacts a process region on the conductive surface with the process solution while applying an electrical potential between the contact electrode and the process…
Protective self-aligned buffer layers for damascene interconnects
Granted: August 18, 2009
Patent Number:
7576006
Capping protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. Encapsulating PSAB layers are formed not only at the surface of the metal layers, but also within the unexposed portions of the metal lines. Encapsulating PSAB layer, for example, can surround the metal line with the PSAB material, thereby protecting interfaces between the metal line and diffusion barriers.…
Electrochemical processing of conductive surface
Granted: August 11, 2009
Patent Number:
7572354
The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment…
Low-k SiC copper diffusion barrier films
Granted: August 11, 2009
Patent Number:
7573061
Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to…
Optimizing target erosion using multiple erosion regions in a magnetron sputtering apparatus
Granted: August 4, 2009
Patent Number:
7569123
In one embodiment, the erosion profile of a shaped target (e.g., hollow cathode target) of a magnetron apparatus is enhanced by using a plurality of sputtering tracks, such as plasma loops, on the target. The erosion profile may be optimized by recording the erosion profile and making adjustments to the magnetic configuration of the magnetron. The recording may include two-dimensional plots of erosion/redepostion rates or a grid overlay tracing of a static burn test, for example. The…
Method for post-etch cleans
Granted: August 4, 2009
Patent Number:
7569492
The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and…
