Preconditioning For EDA Cell Library
Granted: March 18, 2010
Application Number:
20100070938
A characterized cell library for EDA tools includes one or more mathematical models for each cell, and one or more preconditioning functions (and/or inverse preconditioning functions) for each mathematical model. Each mathematical model represents a performance parameter (e.g., delay, power consumption, noise) or a preconditioned performance parameter of the cell. The preconditioning functions convert an operating parameter (e.g., input slew, output capacitance) associated with the…
Method and Apparatus for Merging EDA Coverage Logs of Coverage Data
Granted: March 18, 2010
Application Number:
20100070940
An electronic design automation technology merges coverage logs. The coverage logs are generated by verification of a hardware description language circuit design. The coverage logs are merged as the coverage logs are generated, without waiting for all pending coverage logs. Another electronic design automation technology also merges coverage logs. The merged coverage logs include a first coverage log of a first simulation of a hardware description language circuit design and a second…
Method and Apparatus for Merging EDA Coverage Logs of Coverage Data
Granted: March 18, 2010
Application Number:
20100070935
An electronic design automation technology merges coverage logs. The coverage logs are generated by verification of a hardware description language circuit design. The coverage logs are merged as the coverage logs are generated, without waiting for all pending coverage logs. Another electronic design automation technology also merges coverage logs. The merged coverage logs include a first coverage log of a first simulation of a hardware description language circuit design and a second…
BULK IMAGE MODELING FOR OPTICAL PROXIMITY CORRECTION
Granted: March 4, 2010
Application Number:
20100058280
A method is described herein for predicting lateral position information about a feature represented in an integrated circuit layout for use with an integrated circuit fabrication process, where the process projects an image onto a resist. The method includes providing a lateral distribution of intensity values of the image at different depths with the resist. Next, the lateral position of an edge point of the feature is predicted in dependence upon a particular resist development time,…
Design and Layout of Phase Shifting Photolithographic Masks
Granted: February 25, 2010
Application Number:
20100050149
A method for defining a full phase layout for defining a layer of material in an integrated circuit is described. The method can be used to define, arrange, and refine phase shifters to substantially define the layer using phase shifting. Through the process, computer readable definitions of an alternating aperture, dark field phase shift mask and of a complimentary mask are generated. Masks can be made from the definitions and then used to fabricate a layer of material in an integrated…
Exposure control for phase shifting photolithographic masks
Granted: February 18, 2010
Application Number:
20100040965
Mask and integrated circuit fabrication approaches are described to facilitate use of so called “full phase” masks. This facilitates use of masks where substantially all of a layout is defined using phase shifting. In one embodiment, the phase shifting mask and the trim mask are exposed using substantially the same exposure conditions. These approaches facilitate better exposure profiles for the resulting ICs and can thus improve chip yield and increase throughput by reducing the…
ANALYSIS OF STRESS IMPACT ON TRANSISTOR PERFORMANCE
Granted: February 18, 2010
Application Number:
20100042958
Roughly described, a method for approximating stress-induced mobility enhancement in a channel region in an integrated circuit layout, including approximating the stress at each of a plurality of sample points in the channel, converting the stress approximation at each of the sample points to a respective mobility enhancement value, and averaging the mobility enhancement values at all the sample points. The method enables integrated circuit stress analysis that takes into account…
STRESS ENGINEERING FOR CAP LAYER INDUCED STRESS
Granted: February 4, 2010
Application Number:
20100029050
Improved layouts take better advantage of desirable cap-layer induced transverse and vertical stress. In one aspect, roughly described, a tensile strained cap material overlies the transistor channels in the N-channel diffusion regions but not the P-channel diffusion regions. The material terminates at an edge that is located as far as practical from the N-channel diffusion, toward the P-channel diffusion. In another aspect, roughly described, a gate conductor crosses a P-channel…
METHOD AND SYSTEM FOR FACILITATING FLOORPLANNING FOR 3D IC
Granted: February 4, 2010
Application Number:
20100031217
One embodiment of the present invention provides a system for facilitating floorplanning for three-dimensional integrated circuits (3D ICs). During operation, the system receives a number of circuit blocks. The system places the blocks in at least one layer of a multi-layer die structure and sets an initial value of a time-varying parameter. The system then iteratively perturbs the block arrangement until the time-varying parameter reaches a pre-determined value.
Method and Apparatus for Proximate Placement of Sequential Cells
Granted: February 4, 2010
Application Number:
20100031214
Various methods and apparatuses (such as computer readable media implementing the method) are described that relate to proximate placement of sequential cells of an integrated circuit netlist. For example, the preliminary placement is received; and based on the preliminary placement, a group of sequential cells is identified as being subject to improved power and/or timing upon subsequent placement. In another example, identification is received of a group of sequential cells subject to…
Dynamically Reconfigurable Shared Scan-In Test Architecture
Granted: February 4, 2010
Application Number:
20100031101
A low overhead dynamically reconfigurable shared scan-in test architecture is provided. This test architecture advantageously allows for changing scan inputs during the scan operation on a per shift basis. The flexibility of reconfiguring the scan input to scan chain mapping every shift cycle can advantageously reduce both test data volume and test application time.
VOLTAGE REGULATOR WITH RIPPLE COMPENSATION
Granted: February 4, 2010
Application Number:
20100026251
Embodiments of the present invention provide a voltage regulator. The voltage regulator includes a driving mechanism coupled to an output node (VREG), wherein the driving mechanism is configured to provide current to the output node to sustain a predetermined voltage on the output node. In addition, the voltage regulator includes a boost circuit coupled to the output node, wherein the boost circuit is configured to drive an additional current onto the output node to reduce fluctuations…
METHOD FOR SUPPRESSING LATTICE DEFECTS IN A SEMICONDUCTOR SUBSTRATE
Granted: February 4, 2010
Application Number:
20100025777
A method for suppressing the formation of leakage-promoting defects in a crystal lattice following dopant implantation in the lattice. The process provides a compressive layer of atoms, these atoms having a size greater than that of the lattice member atoms. The lattice is then annealed for a time sufficient for interstitial defect atoms to be emitted from the compressive layer, and in that manner energetically stable defects are formed in the lattice at a distance from the compressive…
STRESS ENGINEERING FOR CAP LAYER INDUCED STRESS
Granted: February 4, 2010
Application Number:
20100024978
Improved layouts take better advantage of desirable cap-layer induced transverse and vertical stress. In one aspect, roughly described, a tensile strained cap material overlies the transistor channels in the N-channel diffusion regions but not the P-channel diffusion regions. The material terminates at an edge that is located as far as practical from the N-channel diffusion, toward the P-channel diffusion. In another aspect, roughly described, a gate conductor crosses a P-channel…
Managing Integrated Circuit Stress Using Stress Adjustment Trenches
Granted: January 28, 2010
Application Number:
20100019317
Roughly described, methods and systems for improving integrated circuit layouts and fabrication processes in order to better account for stress effects. Dummy features can be added to a layout either in order to improve uniformity, or to relax known undesirable stress, or to introduce known desirable stress. The dummy features can include dummy diffusion regions added to relax stress, and dummy trenches added either to relax or enhance stress. A trench can relax stress by filling it with…
ANALYSIS OF STRESS IMPACT ON TRANSISTOR PERFORMANCE
Granted: January 28, 2010
Application Number:
20100023899
Roughly described, a method for approximating stress-induced mobility enhancement in a channel region in an integrated circuit layout, including approximating the stress at each of a plurality of sample points in the channel, converting the stress approximation at each of the sample points to a respective mobility enhancement value, and averaging the mobility enhancement values at all the sample points. The method enables integrated circuit stress analysis that takes into account…
ANALYSIS OF STRESS IMPACT ON TRANSISTOR PERFORMANCE
Granted: January 28, 2010
Application Number:
20100023900
Roughly described, a method for approximating stress-induced mobility enhancement in a channel region in an integrated circuit layout, including approximating the stress at each of a plurality of sample points in the channel, converting the stress approximation at each of the sample points to a respective mobility enhancement value, and averaging the mobility enhancement values at all the sample points. The method enables integrated circuit stress analysis that takes into account…
ANALYSIS OF STRESS IMPACT ON TRANSISTOR PERFORMANCE
Granted: January 28, 2010
Application Number:
20100023901
Roughly described, a method for approximating stress-induced mobility enhancement in a channel region in an integrated circuit layout, including approximating the stress at each of a plurality of sample points in the channel, converting the stress approximation at each of the sample points to a respective mobility enhancement value, and averaging the mobility enhancement values at all the sample points. The method enables integrated circuit stress analysis that takes into account…
ANALYSIS OF STRESS IMPACT ON TRANSISTOR PERFORMANCE
Granted: January 28, 2010
Application Number:
20100023902
Roughly described, a method for approximating stress-induced mobility enhancement in a channel region in an integrated circuit layout, including approximating the stress at each of a plurality of sample points in the channel, converting the stress approximation at each of the sample points to a respective mobility enhancement value, and averaging the mobility enhancement values at all the sample points. The method enables integrated circuit stress analysis that takes into account…
ELECTROSTATIC-DISCHARGE PROTECTION USING A MICRO-ELECTROMECHANICAL-SYSTEM SWITCH
Granted: January 21, 2010
Application Number:
20100014199
Embodiments of an interface circuit are described. This interface circuit includes an input pad, a control node and a transistor, which has three terminals. A first terminal is electrically coupled to the input pad and a second terminal is electrically coupled to the control node. Moreover, the interface circuit includes a micro-electromechanical system (MEMS) switch, which is electrically coupled to the input pad and the control node, where the MEMS switch is in parallel with the…
