Laser annealing scanning methods with reduced annealing non-uniformities
Granted: August 6, 2013
Patent Number:
8501638
Laser annealing scanning methods that result in reduced annealing non-uniformities in semiconductor device structures under fabrication are disclosed. The methods include defining a length of an annealing laser beam such that the tails of the laser beam resided only within scribe lines that separate the semiconductor device structures. The annealing laser beam tails from adjacent scan path segments can overlap or not overlap within the scribe lines. The cross-scan length of the annealing…
Grain refinement by precipitate formation in Pb-free alloys of tin
Granted: June 11, 2013
Patent Number:
8461695
Micro-addition of a metal to a Sn-based lead-free C4 ball is employed to enhance reliability. Specifically, a metal having a low solubility in Sn is added in a small quantity corresponding to less than 1% in atomic concentration. Due to the low solubility of the added metal, fine precipitates are formed during solidification of the C4 ball, which act as nucleation sites for formation multiple grains in the solidified C4 ball. The fine precipitates also inhibit rapid grain growth by…
Fast thermal annealing of GaN LEDs
Granted: June 11, 2013
Patent Number:
8460959
Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing having a time duration of 10 seconds or faster. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method includes performing fast thermal annealing of the p-GaN layer using either a laser or a flash lamp. The method further includes forming a…
Substrate-alignment using detector of substrate material
Granted: April 2, 2013
Patent Number:
RE44116
Methods and apparatuses are provided for positioning a substrate having a target that may be located on either the front-side or the backside of the substrate. The optical detector that views the target contains a signal-generating material that is substantially identical to the substrate material.
Systems and methods for forming a time-averaged line image
Granted: March 19, 2013
Patent Number:
8399808
Systems and methods for forming a time-average line image are disclosed. The method includes forming a line image with a first amount of intensity non-uniformity. The method also includes forming and scanning a secondary image over at least a portion of the line image to form a time-averaged modified line image having a second amount of intensity non-uniformity that is less than the first amount. Wafer emissivity is measured in real time to control the intensity of the secondary image.…
Solder interconnect pads with current spreading layers
Granted: December 25, 2012
Patent Number:
8338947
Structure and methods of making the structures. The structures include a structure, comprising: an organic dielectric passivation layer extending over a substrate; an electrically conductive current spreading pad on a top surface of the organic dielectric passivation layer; an electrically conductive solder bump pad comprising one or more layers on a top surface of the current spreading pad; and an electrically conductive solder bump containing tin, the solder bump on a top surface of…
Solder mold plates used in packaging process and method of manufacturing solder mold plates
Granted: December 25, 2012
Patent Number:
8337735
Solder mold plates and methods of manufacturing the solder mold plates are provided herein. The solder mold plates are used in controlled collapse chip connection processes. The solder mold plate includes a plurality of cavities. At least one cavity of the plurality of cavities has a different volume than another of the cavities in a particular chip set site. The method of manufacturing the solder mold plate includes determining susceptible white bump locations on a chip set. The method…
Phase-shift mask with assist phase regions
Granted: December 4, 2012
Patent Number:
8323857
A phase-shift mask having a checkerboard array and a surrounding sub-resolution assist phase pattern. The checkerboard array comprises alternating phase-shift regions R that have a relative phase difference of 180 degrees. The sub-resolution assist phase regions R? reside adjacent corresponding phase-shift regions R and have a relative phase difference of 180 degrees thereto. The sub-resolution assist phase regions R? are configured to mitigate undesirable edge effects when…
Interconnections for flip-chip using lead-free solders and having improved reaction barrier layers
Granted: November 20, 2012
Patent Number:
8314500
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One…
Apparatuses and methods for irradiating a substrate to avoid substrate edge damage
Granted: November 20, 2012
Patent Number:
8314360
Apparatuses and methods are provided for processing a substrate having an upper surface that includes a central region, a peripheral region, and an edge adjacent to the peripheral region. An image having an intensity sufficient to effect thermal processing of the substrate is scanned across the upper surface of the substrate. The image scanning geometry allows processing the central region of the substrate at a substantially uniform temperature without damaging the outer edge. In some…
Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
Granted: November 13, 2012
Patent Number:
8309474
Systems and methods for performing ultrafast laser annealing in a manner that reduces pattern density effects in integrated circuit manufacturing are disclosed. The method includes scanning at least one first laser beam over the patterned surface of a substrate. The at least one first laser beam is configured to heat the patterned surface to a non-melt temperature Tnonmelt that is within about 400° C. of the melt temperature Tmelt. The method also includes scanning at least one second…
Sub-field enhanced global alignment
Granted: October 30, 2012
Patent Number:
8299446
Sub-field enhanced global alignment (SEGA) methods for aligning reconstituted wafers in a lithography process are disclosed. The SEGA methods provide the ability to accommodate chip placement errors for chips supported by a reconstituted wafer when performing a lithographic process having an overlay requirement. The SEGA methods include measuring chip locations to determine sub-fields of the reconstituted wafer over which enhanced global alignment (EGA) can be performed on the chips…
Apparatus and methods for improving the intensity profile of a beam image used to process a substrate
Granted: April 10, 2012
Patent Number:
8153930
Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell…
Optical alignment methods for forming LEDs having a rough surface
Granted: January 3, 2012
Patent Number:
8088633
A method of aligning a wafer when lithographically fabricating a light-emitting diode (LED). The method includes forming on the wafer at least one roughened alignment mark having a root-mean-square (RMS) surface roughness ?S. The roughened alignment mark is formed as a consequence of forming a plasma etch to roughen a LED surface on which the wafer alignment mark resides. The method also includes imaging the at least one roughened wafer alignment mark with alignment light having a…
Edge with minimal diffraction effects
Granted: December 6, 2011
Patent Number:
8071908
Apparatuses and methods are provide thermally processing of the central portion of a substrate surface using a scanned photonic beam. Such thermal processing is carried out using a shield to block the beam from illuminating the side wall or peripheral portion of the substrate. The shield has characteristics, e.g., diffractive characteristics, effective to maintain the intensity of any unblocked portion of beam suitable for processing the central portion of the substrate surface.
Electrically conductive structure on a semiconductor substrate formed from printing
Granted: November 29, 2011
Patent Number:
8067305
Provided are methods for forming an electrically conductive structure of a desired three-dimensional shape on a substantially planar surface of a substrate, e.g., a semiconductor wafer. Typically, the particulate matter is deposited in a layer-by-layer manner and adhered to selected regions on the substrate surface. The particulate matter may be deposited to produce a mold for forming the structure and/or to produce the structure itself. A three-dimensional printer with associated…
Systems and methods for forming a time-averaged line image
Granted: September 27, 2011
Patent Number:
8026519
Systems and methods for forming a time-averaged line image having a relatively high amount of intensity uniformity along its length is disclosed. The method includes forming at an image plane a line image having a first amount of intensity non-uniformity in a long-axis direction and forming a secondary image that at least partially overlaps the primary image. The method also includes scanning the secondary image over at least a portion of the primary image and in the long-axis direction…
Dual-sided substrate measurement apparatus and methods
Granted: September 13, 2011
Patent Number:
8017424
An apparatus for measuring the relative positions of frontside and backside alignment marks located on opposite sides of a substrate is disclosed. The apparatus includes upper and lower optical systems that allow for simultaneous imaging of frontside and backside alignment marks. The frontside and backside alignment mark images are processed to determine the relative position of the marks, as a measurement of the alignment and/or overlay performance of the tool that formed the marks on…
Line imaging systems and methods for laser annealing
Granted: September 6, 2011
Patent Number:
8014427
The line imaging system includes a laser, first and second cylindrical optical systems with a first spatial filter disposed therebetween, a knife-edge aperture, a cylindrical relay system, and a cylindrical focusing lens. The first spatial filter is configured to truncate a line focus within the central lobe to form a first light beam. The second cylindrical lens system is arranged in the far field and is configured to perform spatial filtering to pass central intensity lobes of the…
Processing substrates using direct and recycled radiation
Granted: May 24, 2011
Patent Number:
7947968
Provided are apparatuses for processing a surface of a substrate using direct and recycled radiation reflected from the substrate. The apparatus includes a radiation source positioned to direct a radiation beam toward a beam image forming system that forms a beam image on the substrate surface and a recycling system. The recycling system collects radiation reflected from the substrate surface and redirects it back toward the beam image on the substrate in a +1× manner. As a result,…
